JANTX2N6849U - MICROSEMI

2N6849U

Compliant P-CHANNEL MOSFET

Qualified per MIL-PRF-19500/564

Qualified Levels:

JAN, JAN TX, JANTXV

and JANS

DESCRIPTION

This 2N6849U switching transistor is military qualifi ed up to the JANS level for hi gh-reliability

applications. This device is also a vailable i n a thru hole TO-205AF package. Microsemi also

of fers numerous oth er transistor products to meet higher and lower power rat ings with vari ous

switching speed requirements in b oth th r ough-hol e and surface-mount pack ages .

U-18 LCC

Package

Also available in:

TO-205AF (TO-39)

package

(Leaded Top Hat)

2N6849

Important: For the latest infor mation, visit our website http://www.microsemi.com.

FEATURES

• Sur face mount equiv alent of JE DEC registered 2N6849 number.

• JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/564.

(See part nomenclature for all avai lable options.)

• RoHS compl iant by design.

APPLICATIONS / BENE FITS

• Low profile surface mount for crowded areas .

• Military and other high-reliability applications.

MAXIMUM RATINGS @ TA = +25 ºC unless otherwise stated

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road B usiness Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

Parameters / Test Conditions

Symbol

Value

Unit

Operating & Storage Junction Temperature Range

TJ & Tstg

-55 to +150

°C

Thermal Resistance Junction-to-Case

RӨJC

5.0

oC/W

Total Power Dissipation

@ T

A

= +25 °C

@ T C = +25 °C

(1)

PT

0.8

25

W

Drain-Source Voltage, dc

VDS

-100

V

Gate-Source Voltage, dc

VGS

± 20

V

Drain Current, dc @ TC = +25 ºC (2)

ID1

-6.5

A

Drain Current, dc @ TC = +100 ºC (2)

ID2

-4.1

A

Off-State Current (Peak Total Value) (3)

IDM

-25

A (pk)

Source Current

IS

-6.5

A

Notes: 1. Derate linearly 0.2 W/°C for TC > +2 5 °C.

2. The following formula derives the maximum theoretical ID limit. ID is also l imited by package and

interna l wi res and may be limited due to pin dia met er.

3. IDM = 4 x ID1 as calculated in note 2.

2N6849U

M ECHANICAL and PACKAG ING

• CASE: Ceramic LCC-18 with kovar gold plated lid.

• TERMINALS: Gold plating over nickel.

• MARKING: Manufacturer’s ID, part number, date code, ESD symbol at pin 1 location.

• TAPE & REEL option: Standard per EIA-481-D. Consult factory for quantities.

• See Package Dimensions on last page.

PART NOMENCLATURE

JAN 2N6849 U

Reliability Level

JAN = JAN Level

JANTX = JANTX Level

JANTXV = JANTXV Level

JANS = JANS Level

Blank = Commercial

Surface Mount package

JEDEC type number

(see Electrical Characteris tics

table)

SYMBOL S & DEFI NITIONS

Symbol

Definition

di/dt

Rate o f chan ge of diode current while in reverse-recover y mode, recorded as maximum value.

IF

Forward current

RG

Gate drive impedance

VDD

Drain supply voltage

VDS

Drain source voltage, dc

VGS

Gate source voltage, dc

2N6849U

ELECTRICAL CHARACTE RISTI CS @ TA = +25 ° C , unless otherwise n oted

Paramete r s / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Drain-S ource Breakd own Voltag e

VGS = 0 V, ID = -1.0 mA

V(BR)DSS -100 V

Gate-Source Voltag e ( Threshold)

VDS ≥ VGS, ID = -0.25 mA

VDS ≥ VGS, ID = -0.25 m A, TJ = +125°C

VDS ≥ VGS, ID = -0.25 m A, TJ = -55°C

VGS(th)1

VGS(th)2

VGS(th)3

-2.0

-1.0

-4.0

-5.0

V

G ate Current

VGS = ± 20 V, VDS = 0 V

VGS = ± 20 V, VDS = 0 V, TJ = +125°C

IGSS1

IGSS2

±100

±200 nA

Drain Current

VGS = 0 V, VDS = -80 V IDSS1 -25 µA

Drain Current

VGS = 0 V, VDS = -80 V , TJ = +125 °C IDSS2

-0.25 mA

Static Drain -Sou r ce On-St ate Res istance

VGS = -10 V, ID = -4.1 A puls ed rDS(on)1 0.30 Ω

Static Drain -Sou r ce On-St ate Res istance

VGS = -10 V, ID = -6.5 A puls ed rDS(on)2 0.32 Ω

Static Drain -Sou r ce On-St ate Res istance

TJ = +125°C

VGS = -10 V, ID = -4.1 A puls ed

rDS(on)3

0.54

Ω

Diode F orwar d Volt age

VGS = 0 V, ID = -6.5 A pul s e d VSD -4.3 V

DYNAMIC CHARACTE RISTICS

Paramete r s / Test Conditions

Symbol

Min.

Max.

Unit

G ate Charge:

On-State Gate Charge

VGS = -10 V, ID = -6.5 A, VDS = -50 V Qg(on) 34.8 nC

G ate t o Source C harge

VGS = -10 V, ID = -6.5 A, VDS = -50 V Qgs 6.8 nC

G ate t o D r ain C harge

VGS = -10 V, ID = -6.5 A, VDS = -50 V Qgd 23.1 nC

2N6849U

ELECTRICAL CHARACTERI STICS @ TA = +2 5 ° C , unles s otherwise noted (continued)

SW ITCHING CHAR ACT ERIST ICS

Paramete r s / Test Conditions

Symbol

Min.

Max.

Unit

Turn-on delay tim e

ID = -6.5 A, VGS = -10 V, RG = 7.5 Ω, VDD = -40 V

td(on)

60

ns

Rins e t ime

ID = -6.5 A, VGS = -10 V, RG = 7.5 Ω, VDD = -40 V

tr

140

ns

Turn-off delay time

ID = -6.5 A, VGS = -10 V, RG = 7.5 Ω, VDD = -40 V

td(off)

140

ns

Fall time

ID = -6.5 A, VGS = -10 V, RG = 7.5 Ω, VDD = -40 V

tf

140

ns

Diode Reverse Recovery Tim e

di/dt ≤ -100 A/µ s, VDD ≤ -50 V, IF = -6.5 A

trr

250

ns

2N6849U

GRAPHS

t1, Rect angle Pulse Duration ( seconds)

FIGURE 1 – Normalized Transient Thermal Impedance

TC, CASE TEMPERATURE (°C)

FIGURE 2 – Maximum Drain Current vs Case Temperature

Thermal Response (Z

ӨJC

)

I

D,

DRAIN CURRE NT (A)

2N6849U

GRAPHS (continued)

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 3 – Maximum Safe Operating Area

ID, DRAIN CURRENT (AMPERES)

2N6849U

PACKAGE DIM ENSIONS

Dimensions

Ltr

Inches

Millimeters

Min

Max

Min

Max

BL

.345

.360

8.77

9.14

BW

.280

.295

7.12

7.49

CH

.095

.115

2.42

2.92

LL1

.040

.055

1.02

1.39

LL2

.055

.065

1.40

1.65

LS

.050 BSC

1.27 BSC

LS1

.025 BSC

0.635 BSC

LS2

.008 BSC

0.203 BSC

LW

.020

.030

0.51

0.76

Q1

.105 REF

2.67 REF

Q2

.120 REF

3.05 REF

Q3

.045

.055

1.14

1.40

TL

.070

.080

1.78

2.03

TW

.120

.130

3.05

3.30

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general

information only.

3. In accordance with ASME Y14.5M,

diameters are equivalent to Φx

symbology.

4. Ceramic package only.

2N6849U

PAD LAYOUT

PAD ASSIGNM ENTS