May 2009
1
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CS1D060
FLAT-BASE TYPE
INSULATED PACKAGE
PM100CS1D060
FEATURE
Inverter + Drive & Protection IC
• 3 phase 100A/600V CSTBTTM
(The Current senser and the thermal senser with a build-in
CSTBTTM.)
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
circuit, over-temperature & under-voltage
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES Dimensions in mm
5-M4 NUT
2-φ5.5
MOUNTING HOLES
23.79
2-2.54
2-2.54
2-2.54
5-2.54
10.6
6.5
50
10.16 10.16
15 19 19 19
LABEL
19
10.16
106 ±0.3
28 11.6
(10)
16.5
30
7
120
14
WVUNP
9
67.4
5.57
50
39 8.52.5
16.525
71015
31.5+
–1
0.5
1. VWPC
2. WP
3. VWP1
4. VVPC
5. VP
6. VVP1
7. VUPC
8. UP
9. VUP1
10. VNC
11. VN1
12. WN
13. VN
14. UN
15. Fo
Te rminal code
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CS1D060
FLAT-BASE TYPE
INSULATED PACKAGE
May 2009
2
600
100
200
446
–20 ~ +150
Ratings
VCES
±IC
±ICP
PC
Tj
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
VD = 15V, VCIN = 15V
TC = 25°C(Note-1)
TC = 25°C
TC = 25°C(Note-1)
V
A
A
W
°C
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Condition Unit
INTERNAL FUNCTIONS BLOCK DIAGRAM
V
N
U
N
W
P
V
WP1
V
WPC
V
P
V
VP1
V
VPC
U
P
V
UP1
V
UPC
NWVUP
Fo
Rfo
V
NC
V
N1
W
N
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Vcc
Gnd Si Out OT
Gnd In Vcc
Gnd Si Out OT
Gnd In Vcc
Gnd Si Out OT
Rfo = 1.5kΩ
*: Tc measurement point is just under the chip.
VFO
IFO
CONTROL PART
V
mA
20
20
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Symbol Parameter Condition Ratings Unit
Applied between : VUP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN-VNC
Applied between : FO-VNC
Sink current at FO terminals
20
20
VD
VCIN
V
V
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CS1D060
FLAT-BASE TYPE
INSULATED PACKAGE
May 2009
3
Parameter
Symbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
Condition
VCC(surge)
Tstg
Viso
Ratings
VCC(PROT) 400
500
–40 ~ +125
2500
Unit
V
°C
Vrms
V
VD = 13.5 ~ 16.5V
Inverter Part, Tj = +125°C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
TOTAL SYSTEM
0.28
0.46
0.046
°C/W
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)
Inverter IGBT part (per 1 element) (Note-1)
Inverter FWDi part (per 1 element) (Note-1)
Case to fin, (per 1 module)
Thermal grease applied (Note-1)
Symbol Condition Unit
Min.
—
—
—
—
—
—
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
(Note-1) Tc (under the chip) measurement point is below.
Parameter Limits
Typ. Max.
UP
IGBT
21.4
4.5
VP WP UN VN WN
FWDi
21.4
–5.9
IGBT
65.0
4.5
FWDi
65.0
–5.9
IGBT
90.0
4.5
FWDi
90.0
–5.9
IGBT
36.0
–0.5
FWDi
36.0
–9.9
IGBT
51.0
–0.5
FWDi
51.0
–9.9
IGBT
76.0
–0.5
FWDi
76.0
–9.9
arm
axis
X
Y
(unit : mm)
2.40
2.50
2.80
1.8
0.6
1.0
2.4
0.6
1
10
Min. Typ. Max.
Collector-Emitter Saturation
Voltage
Collector-Emitter Cutoff
Current
–IC = 100A, VD = 15V, VCIN = 15V (Fig. 2)
Tj = 25°C
Tj = 125°C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Parameter
Symbol Condition
VCE(sat)
ICES
VEC
ton
trr
tc(on)
toff
tc(off)
Limits
—
—
—
0.4
—
—
—
—
—
—
1.80
1.85
1.85
0.8
0.3
0.4
1.4
0.3
—
—
Tj = 25°C
Tj = 125°C
FWDi Forward Voltage
Switching Time
VD = 15V, VCIN = 0V↔15V
VCC = 300V, IC = 100A
Tj = 125°C
Inductive Load (Fig. 3,4)
V
CE
= V
CES
, V
D
= 15V
(Fig. 5)
VD = 15V, IC = 100A
VCIN = 0V, Pulsed (Fig. 1) V
mA
V
µs
Unit
Bottom view
X
Y
PNU VW
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CS1D060
FLAT-BASE TYPE
INSULATED PACKAGE
May 2009
4
–20 ≤ Tj ≤ 125°C
VD = 15V, VCIN = 15V (Note-2)
VD = 15V (Note-2)
Vth(ON)
Vth(OFF)
SC
toff(SC)
OT
OT(hys)
UV
UVr
IFO(H)
IFO(L)
tFO
–20 ≤ Tj ≤ 125°C, VD = 15V (Fig. 3,6)
VD = 15V (Fig. 3,6)
VD = 15V, VCIN = 15V
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN-VNC
ID
°C
V
mA
ms
12
4
1.8
2.3
—
—
—
—
12.5
—
0.01
15
—
mA
Circuit Current
Input ON Threshold Voltage
Input OFF Threshold Voltage
Short Circuit Trip Level
Short Circuit Current Delay
Time
Over Temperature Protection
Supply Circuit Under-Voltage
Protection
Fault Output Current
Minimum Fault Output Pulse
Width
CONTROL PART
—
—
1.2
1.7
150
—
135
—
11.5
—
—
—
1.0
Parameter
Symbol Condition Max.
Min. Typ. Unit
Limits
6
2
1.5
2.0
—
1.0
—
20
12.0
12.5
—
10
1.8
(Note-2) Fault output is given only when the internal SC, OT & UV protection.
Fault output of SC, OT & UV protection operate by lower arms.
Fault output of SC protection given pulse.
Fault output of OT, UV protection given pulse while over trip level.
V
µs
VN1-VNC
V*P1-V*PC
A
3.5
2.0
—
—
—
Mounting part screw : M5
Main terminal part screw : M4
—
Symbol Parameter
Mounting torque
Weight
Condition Unit
N • m
g
Limits
Min. Typ. Max.
2.5
1.5
—
3.0
1.7
400
MECHANICAL RATINGS AND CHARACTERISTICS
RECOMMENDED CONDITIONS FOR USE
Recommended value Unit
Condition
Symbol Parameter
V
Applied across P-N terminals
Applied between : VUP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC (Note-3)
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN-VNC
Using Application Circuit of Fig. 8
Supply Voltage
Control Supply Voltage
Input ON Voltage
Input OFF Voltage
PWM Input Frequency
≤ 400
15.0 ±1.5
≤ 0.8
≥ 9.0
≤ 20
VCC
VCIN(ON)
VCIN(OFF)
fPWM
VDV
V
kHz
(Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak
tdead Arm Shoot-through Blocking
Time For IPM’s each input signals (Fig. 7) ≥ 2.0 µs
≤
±
5V/µs
≤
2V
GND
15V
Trip level
Hysteresis
Trip level
Reset level
Detect Temperature of IGBT chip
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CS1D060
FLAT-BASE TYPE
INSULATED PACKAGE
May 2009
5
PRECAUTIONS FOR TESTING
1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corre-
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al-
lowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W,B)
U,V,(N) U,V,W,B, (N)
VD (all)
IN
Fo
IN
Fo
VD (all)
VCIN
(0V)
Ic
V V
P, (U,V,W,B)
VCIN
(15V)
–Ic
Fig. 7 Dead time measurement point example
Fig. 1 VCE(sat) Test Fig. 2 VEC, (VFM) Test
0V 1.5V 1.5V
1.5V
2V
2V
2V
0V
t
t
tdeadtdeadtdead
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
IPM’ input signal VCIN
(Upper Arm)
IPM’ input signal VCIN
(Lower Arm)
10%
90%
trr
Irr
trtd(on)
tc(on) tc(off)
td(off)
VCIN
Ic
VCE
10%
10% 10%
90%
tf
(ton = td(on) + tr) (toff = td(off) + tf)
Fo
P
N
N
CS
CS
U,V
Vcc
Vcc
Ic
Ic
VD (all)
VD (all)
P
U,V
VCIN
VCIN
VCIN
(15V)
VCIN
(15V)
Fo
Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform
a) Lower Arm Switching
Signal input
(Upper Arm)
Signal input
(Lower Arm)
Signal input
(Upper Arm)
Signal input
(Lower Arm)
b) Upper Arm Switching
VCIN
Fig. 5 ICES Test
Fig. 6 SC test waveform
SC Trip
Short Circuit Current
toff(SC)
VD (all) U,V,W,B, (N)
P, (U,V,W,B) A
Pulse VCE
VCIN
(15V) Ic
Fo
IN
Fo
Constant Current
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CS1D060
FLAT-BASE TYPE
INSULATED PACKAGE
May 2009
6
NOTES FOR STABLE AND SAFE OPERATION ;
•Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
•Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
•Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.
•Slow switching opto-coupler: CTR > 100%
•Use 3 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
power supply.
•Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
terminal.
•Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line
and improve noise immunity of the system.
: Interface which is the same as U-phase
Fig. 8 Application Example Circuit
OUT
Si
OT
OT
OT
OT
OT
OT
GNDGND
In
Vcc
U
V
W
N
P
M
→
IF
+
–
OUT
Si
GNDGND
In
Vcc
OUT
Si
GNDGND
In
Vcc
OUT
Si
GNDGND
In
Fo
Vcc
OUT
Si
GNDGND
In
Fo
Vcc
OUT
Si
GND
GND
In
Fo
Vcc
VWP1
WP
VWPC
UN
VN
VN1
WN
VNC
Rfo
Fo
VVP1
VP
VVPC
≥0.1µ
1kΩ
≥0.1µ
≥0.1µ
20kΩ
20kΩ
20kΩ
≥10µ
≥10µ
≥10µ
20kΩ≥10µ
≥0.1µ
VUP1
UP
VUPC
→
→
IF
IF
IF
5V
→
V
D
VD
VD
VD
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CS1D060
FLAT-BASE TYPE
INSULATED PACKAGE
May 2009
7
PERFORMANCE CURVES
0 0.5 1.0 1.5 2.0 2.5
0 0.5 1.0 1.5 2.0 2.5
0
0.5
1.0
1.5
2.0
2.5
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
12 13 14 15 16 17 18
V
D
= 15V
T
j
= 25°C
T
j
= 125°C
V
D
= 15V
T
j
= 25°C
T
j
= 125°C
I
C
= 75A
T
j
= 25°C
T
j
= 125°C
t
on
t
off
V
CC
= 300V
V
D
= 15V
T
j
= 25°C
T
j
= 125°C
Inductive load
T
j
= 25°C
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
0
20
40
60
80
100
120
140
160
V
D
= 17V
13V
15V
10
02
10
1
357 2
10
2
357 2
10
3
357
10
02
10
1
357 2
10
2
357 2
10
3
357
10
–2
10
–1
2
3
4
5
7
10
0
2
3
4
5
7
t
c(on)
t
c(off)
V
CC
= 300V
V
D
= 15V
T
j
= 25°C
T
j
= 125°C
Inductive load
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE(sat)
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. V
D
) CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
CONTROL POWER SUPPLY VOLTAGE V
D
(V)
COLLECTOR RECOVERY CURRENT –I
C
(A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
DIODE FORWARD CHARACTERISTICS
(TYPICAL)
SWITCHING TIME t
on
, t
off
(µs)
SWITCHING TIME (t
on
, t
off
) CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
SWITCHING TIME (tc
(on)
, tc
(off)
) CHARACTERISTICS
(TYPICAL)
SWITCHING TIME t
c(on)
, t
c(off)
(µs)
COLLECTOR CURRENT I
C
(A)
050100 150 200
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CS1D060
FLAT-BASE TYPE
INSULATED PACKAGE
May 2009
8
0020
40 50 60 100 120 140
0.5
1.0
1.5
2.0
2.5
3.0
20 40 60 80 100 12040 60 80 100 120 0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25
VCC = 300V
VD = 15V
Tj = 25°C
Tj = 125°C
Inductive load
trr
Irr
VCC = 300V
VD = 15V
Tj = 25°C
Tj = 125°C
Inductive load
N-side
P-side
VD = 15V
Tj = 25°C
Tj = 125°C
020 140
Eon
Eoff
0 140
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0 VCC = 300V
VD = 15V
Tj = 25°C
Tj = 125°C
Inductive load
0
5
10
15
20
25
30
35
COLLECTOR CURRENT I
C
(A)
SWITCHING LOSS CHARACTERISTICS
(TYPICAL)
SWITCHING LOSS Eon, Eoff (mJ/pulse)
SWITCHING RECOVERY LOSS CHARACTERISTICS
(TYPICAL)
SWITCHING LOSS Err (mJ/pulse)
DIODE REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
COLLECTOR RECOVERY CURRENT –I
C
(A)
RECOVERY TIME t
rr
(µs)
RECOVERY CURRENT l
rr
(A)
f
c
(kHz)
ID VS. fc CHARACTERISTICS
(TYPICAL)
I
D
(mA)
0
2
4
6
8
10
12
14
16
18
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0 VD = 15V
–50 0 50 100 150 –50 0 50 100 150
COLLECTOR RECOVERY CURRENT –I
C
(A)
T
j
(°C)
UV TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
SC TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
UV
t
/UV
r
T
j
(°C)
SC
UVt
UVr
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CS1D060
FLAT-BASE TYPE
INSULATED PACKAGE
May 2009
9
23 57
10
–3
23 5723 57
10
–4
23 57
10
1
23 57
10
0
10
–1
23 57
10
–2
10
–5
10
–2
10
–3
10
–1
5
7
10
0
2
3
5
7
2
3
5
7
2
3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(TYPICAL)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
t(sec)
Single Pulse
IGBT part;
Per unit base
= R
th(j – c)
Q = 0.28°C/W
FWDi part;
Per unit base
= R
th(j – c)
F = 0.46°C/W
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