SSM6L36FE
2014-11-14
1
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
SSM6L36FE
○ High-Speed Switching Applications
• 1.5-V drive
• Low ON-resistance Q1 Nch: Ron = 1.52Ω (max) (@VGS = 1.5 V)
Ron = 1.14Ω (max) (@VGS = 1.8 V)
Ron = 0.85Ω (max) (@VGS = 2.5 V)
Ron = 0.66Ω (max) (@VGS = 4.5 V)
Ron = 0.63Ω (max) (@VGS = 5.0 V)
• Q2 Pch: Ron = 3.60Ω (max) (@VGS = -1.5 V)
Ron = 2.70Ω (max) (@VGS = -1.8 V)
Ron = 1.60Ω (max) (@VGS = -2.8 V)
Ron = 1.31Ω (max) (@VGS = -4.5 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain–source voltage VDSS
20 V
Gate–source voltage VGSS
±10 V
Drain current
DC ID
500
mA
Pulse I
DP
1000
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain–source voltage VDSS
-20 V
Gate–source voltage VGSS
±8 V
Drain current
DC ID
-330
mA
Pulse IDP
-660
Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2)
Characteristics Symbol Rating Unit
Drain power dissipation PD(Note 1)
150 mW
Channel temperature Tch 150 °C
Storage temperature range Tstg -55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6)
Unit: mm
0.2±0.05
6
1.2±0.05
1.6±0.05
1.0±0.05
1
2
0.5
0.5
3
1.6±0.05
5
4
0.12±0.05
0.55±0.05
JEDEC -
JEITA -
TOSHIBA 2-2N1D
Weight: 3.0 mg (typ.)
ES6
1.Source1 4.Source2
2.Gate1 5.Gate2
3.Drain2 6.Drain1
Start of commercial production
2008-06
SSM6L36FE
2014-11-14
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Q1 Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain-source breakdown voltage
V (BR) DSS ID = 1 mA, VGS = 0 V 20 ― ―
V
V (BR) DSX ID = 1 mA, VGS = - 10 V 12 ― ―
Drain cutoff current IDSS VDS =20 V, VGS = 0 V ― ― 1 μA
Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ― ― ±1 μA
Gate threshold voltage Vth VDS = 3 V, ID = 1 mA 0.35 ― 1.0 V
Forward transfer admittance |Yfs| VDS = 3 V, ID = 200 mA (Note2) 420 840 ― mS
Drain-source ON-resistance RDS (ON)
ID = 200 mA, VGS = 5.0 V (Note2) ― 0.46 0.63
Ω
ID = 200 mA, VGS = 4.5 V (Note2) ― 0.51 0.66
ID = 200 mA, VGS = 2.5 V (Note2) ― 0.66 0.85
ID = 100 mA, VGS = 1.8 V (Note2) ― 0.81 1.14
ID = 50 mA, VGS = 1.5 V (Note2) ― 0.95 1.52
Input capacitance Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
― 46 ―
pF Output capacitance Coss ― 10.8 ―
Reverse transfer capacitance Crss ― 7.3 ―
Total Gate Charge Qg
VDS = 10 V, ID = 0.5 A, VGS = 4.0 V
― 1.23 ―
nC Gate−Source Charge Qgs ― 0.60 ―
Gate−Drain Charge Qgd ― 0.63 ―
Switching time
Turn-on time ton VDD = 10 V, ID = 200 mA
VGS = 0 to 2.5 V, RG = 50 Ω
― 30 ―
ns
Turn-off time toff ― 75 ―
Drain-source forward voltage VDSF ID = -0.5 A, VGS = 0 V (Note2) ― -0.88 -1.2 V
Q2 Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Conditions Min Typ. Max Unit
Drain-source breakdown voltage V
(BR) DSS
I
D
= -1 mA, V
GS
= 0 V -20 ― ― V
V
(BR) DSX
I
D
= -1 mA, V
GS
= 8 V -12 ― ―
Drain cutoff current IDSS VDS = -16 V, VGS = 0 V ― ― -10 μA
Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ― ― ±1 μA
Gate threshold voltage Vth VDS = -3 V, ID = -1 mA -0.3 ― -1.0 V
Forward transfer admittance |Yfs| VDS = -3 V, ID = -100 mA (Note2) 190 ― ― mS
Drain-source ON-resistance RDS (ON)
I
D
= -100 mA, V
GS
= -4.5 V (Note2) ― 0.95 1.31
Ω
ID = -80 mA, VGS = -2.8 V (Note2) ― 1.22 1.60
ID = -40 mA, VGS = -1.8 V (Note2) ― 1.80 2.70
ID = -30 mA, VGS = -1.5 V (Note2) ― 2.23 3.60
Input capacitance Ciss
VDS = -10 V, VGS = 0 V, f = 1 MHz
― 43 ―
pF
Output capacitance Coss ― 10.3 ―
Reverse transfer capacitance Crss ― 6.1 ―
Total Gate Charge
Q
g
VDS = -10 V, IDS = -330mA, VGS = -4 V
― 1.2 ―
nC
Gate−Source Charge Qgs ― 0.85 ―
Gate−Drain Charge Qgd ― 0.35 ―
Switching time
Turn-on time ton VDD = -10 V, ID = -100 mA
VGS = 0 to -2.5 V, RG = 50 Ω
― 90 ―
ns
Turn-off time toff ―
200 ―
Drain-source forward voltage VDSF
ID = 330 mA, VGS = 0 V (Note2)
―
0.88 1.2 V
Note 2: Pulse test
SSM6L36FE
2014-11-14
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Q1 Switching Time Test Circuit
(a) Test Circuit (b) VIN
Q2 Switching Time Test Circuit
(a) Test Circuit (b) VIN
Marking Equivalent Circuit (top view)
Q1 Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the Q1 of
the SSM6L36FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower
than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Q2 Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (-1 mA for the Q2 of
the SSM6L36FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower
than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
V
DD
= 10 V
Duty
≤ 1%
V
IN: tr, tf < 5 ns
(Z
out = 50 Ω)
Common Source
Ta
= 25°C
VDD
OUT
IN
2.5 V
0
10 μs
50 Ω
RL
(c) VOUT
ton
90%
10%
0 V
2.5 V
10%
90%
toff
tr
tf
VDD
VDS (ON)
(c) VOUT
V
DD
= -10 V
Duty
≤ 1%
V
IN: tr, tf < 5 ns
(Z
out = 50 Ω)
Common Source
Ta
= 25°C
IN
0
-
2.5V
10 μs
VDD
OUT
50Ω
RL
t
on
90%
10%
-2.5 V
0 V
90%
10%
t
off
tr
tf
VDS (ON)
V
DD
LL4
6 5 4
1
2
3
6 5 4
1
2
3
Q1
Q2
SSM6L36FE
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Q1 (N-ch MOSFET)
Ambient temperature Ta (°C)
V
th
– Ta
Gate threshold voltage V
th
(V)
1.0
0
-50 0 150 50 100
0.5
Common Source
VDS = 3 V
ID = 1 mA
Ambient temperature Ta (°C)
R
DS (ON)
– Ta
Drain-source ON-resistance
R
DS (ON)
(Ω)
0
-50 0 50 150
1.0
100
Common Source
1.5
0.5
I
D
= 50m A / V
GS
= 1.5 V
100m
A / 1.8 V
200m
A / 5.0 V
200m
A / 4.5 V
200m
A / 2.5 V
Drain-source voltage V
DS
(V)
I
D
– V
DS
Drain current I
D
(mA)
0
800
0 0.2
0.4 0.6
600
200
1000
0.8 1.0
400
VGS = 1.2 V
10 V
Common Source
Ta = 25 °C
4.5 V
1.8 V
2.5 V
1.5 V
RDS (ON) – ID
Drain current I
D
(mA)
Drain-source ON-resistance
R
DS (ON)
(Ω)
0 400 600 800
0
2
1000
3
1
200
VGS = 4.5V
1.5 V
1.8 V
Common Source
Ta = 25°C
2.5V
Drain-source ON-resistance
R
DS (ON)
(Ω)
0
Gate-source voltage V
GS
(V)
4
0
R
DS (ON)
– V
GS
2
3
1
8 2 6 10
-25 °C
Ta = 100 °C
ID = 200mA
Common Source
25 °C
Gate-source voltage V
GS
(V)
I
D
– V
GS
Drain current I
D
(mA)
1000
0
10
100
0.1
1
0.01
3.0
1.0 2.0
-25 °C
Ta = 100 °C
25 °C
Common Source
VDS = 3 V
SSM6L36FE
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Q1 (N-ch MOSFET)
Drain current I
D
(mA)
Forward transfer admittance |Y
fs
| (mS)
|Yfs| – ID
10
1000
1000
10 100
3000
300
1
10000
Common Source
VDS = 3 V
Ta = 25°C
100
30
Drain-source voltage V
DS
(V)
C – V
DS
Capacitance C (pF)
1
0.1
1
10
100
10
100
30
50
3
5
Common Source
Ta = 25°C
f = 1 MHz
VGS = 0 V
Ciss
Coss
Crss
Total Gate Charge Qg (nC)
Dynamic Input Characteristic
Gate-source voltage VGS (V)
0
0 2
4
8
10
6
2
1 3
Common Source
ID = 0.5 A
Ta = 25°C
VDD = 10 V VDD = 16 V
Drain current I
D
(mA)
Switching time t (ns)
t – I
D
10
1
1000
10 100 1000
100
tf
ton
tr
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
RG = 4.7 Ω
toff
Drain reverse current I
DR
(mA)
Drain-source voltage V
DS
(V)
IDR – VDS
1000
0
10
100
0.1
1
–0.5 –1.0 –1.5
−25 °C
Ta =100 °C
25 °C
Common Source
VGS = 0 V
G
D
S
IDR
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Q2 (P-ch MOSFET)
Ambient temperature Ta (°C)
V
th
– Ta
Gate threshold voltage V
th
(V)
-1.0
0
-50 0 150
-0.5
50 100
Common Source
VDS = -3 V
ID = -1 mA
Drain-source ON-resistance
R
DS (ON)
(Ω)
0 -2 -4
-6
Gate-source voltage V
GS
(V)
0
5
R
DS (ON)
– V
GS
4
-8
3
2
1
- 25 °C
Ta = 100 °C
25 °C
ID =-100mA
Common Source
Ta = 25°C
Drain-source voltage V
DS
(V)
I
D
– V
DS
Drain current I
D
(mA)
0
-200
0 -0.5
-1.0 -1.5
-100
-500
-8V
Common Source
Ta
= 25 °C
-2.8V
-4.5V
-1.5 V
-1.8 V
V
GS
=-1.2 V
-2.5V
-300
-400
-600
-700
Gate-source voltage V
GS
(V)
I
D
– V
GS
Drain current I
D
(mA)
-1000
0
-10
-100
-0.1
-1
-0.01
-1.0 -2.0
-25 °C
Ta = 100 °C
25 °C
Common Source
VDS = -3 V
R
DS (ON)
– I
D
Drain current I
D
(mA)
Drain-source ON-resistance
R
DS (ON)
(Ω)
0 -100
-200
0
5
4
3
2
1
VGS = -4.5 V
-2.8 V
Common Source
Ta = 25°C
-1.8 V
-300
-400
-500
-600
-700
-1.5 V
0
5
4
3
2
1
Ambient temperature Ta (°C)
Drain-source ON-resistance
R
DS (ON)
(Ω)
R
DS (ON)
– Ta
-50 0 50 150 100
Common Source
I
D
= -100mA / V
GS
= -4.5 V
-
40mA / -1.8 V
-
80mA / -2.8 V
-30mA / -1.5V
SSM6L36FE
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Q2 (P-ch MOSFET)
Drain current I
D
(mA)
Forward transfer admittance |Y
fs
| (mS)
|Yfs| – ID
10
-1000
100
1000
-10 -100
300
30
-1
Common Source
VDS = -3 V
Ta = 25°C
Drain-source voltage V
DS
(V)
C – V
DS
Capacitance C (pF)
1
-0.1
-1
-10
-100
10
100
30
50
3
5
Common Source
Ta = 25°C
f = 1 MHz
VGS = 0 V
Ciss
Crss
Coss
Drain reverse current I
DR
(mA)
Drain-source voltage V
DS
(V)
IDR – VDS
1000
0
10
100
0.1
1
0.2 0.6
0.4 1.0 0.8 1.2
-25 °C
Ta =100 °C
25 °C
Common Source
VGS = 0 V
G
D
S
IDR
Drain current I
D
(mA)
Switching time t (ns)
t – I
D
10
-1
1000
-10
10000
-100
-1000
100
tf
ton
tr
Common Source
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25 °C
RG = 50Ω
toff
Total Gate Charge Qg (nC)
Dynamic Input Characteristic
Gate-source voltage VGS (V)
0
0 2
-4
-8
-6
-2
3 1
Common Source
ID = -0.33 A
Ta = 25°C
V
DD
= - 16 V
V
DD
=-10V
SSM6L36FE
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Q1, Q2 Common
Ambient temperature Ta (°C)
P
D
* – Ta
Drain power dissipation P
D*
(mW)
200
0
150
120 100 140
100
150
160
250
80 60 40 20 0 -20 -40
Mounted on FR4 board.
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.135 mm2 × 6)
*: Total Rating
SSM6L36FE
2014-11-14
9
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
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• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
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infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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except in compliance with all applicable export laws and regulations.
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIB A ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
