5STF 10F3080
TS - TR/281/09 Jul-10 1 of 11
5STF 10F3080
Old part no. TR 918-1010-30
Fast Thyristor
Properties Key Parameters
§ Amplifying gate VDRM, VRRM
=
3 000 V
§ High operational capability ITAV
=
1 003 A
§ Optimized turn-off parameters ITSM
=
13.0 kA
VTO
=
2.562 V
Applications rT
=
0.246 mΩ
§ Power switching applications tq
=
80.0 µs
Types
VRRM, VDRM
5SDF 10F3080..3010
5SDF 10F2880..2810 3 000 V
2 800 V
Conditions:
Tj = -40 ÷ 125 °C, half sine waveform,
f = 50 Hz, note 1
Mechanical Data
Fm Mounting force
22 ± 2
kN
m Weight 0.48
kg
DS Surface
creepage
distance
25
mm
Da Air strike
distance 13
mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250, http://www.abb.com/semiconductors
5STF 10F3080
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/281/09 Jul-10 2 of 11
Maximum Ratings Maximum Limits Unit
VRRM
VDRM
Repetitive peak reverse
and off-state voltage
Tj = -40 ÷ 125 °C, note 1
5SDF 10F3080..3010
5SDF 10F2880..2810
3 000
2 800 V
ITRMS RMS on-state current
Tc = 70 °C, half sine waveform, f = 50 Hz 1 575 A
ITAVm Average on-state current
Tc = 70 °C, half sine waveform, f = 50 Hz 1 003 A
ITSM Peak non-repetitive surge
half sine pulse, VR = 0 V tp = 10 ms
tp = 8.3 ms 13 000
13 900 A
I2t Limiting load integral
half sine pulse, VR = 0 V tp = 10 ms
tp = 8.3 ms 845 000
800 000 A2s
(diT/dt)cr Critical rate of rise of on-state current
IT = ITAVm, half sine waveform, f = 50 Hz,
VD = 2/3 VDRM, tr = 0.3 µs, IGT = 2 A
800 A/µs
(dvD/dt)cr Critical rate of rise of off-state voltage
VD = 2/3 VDRM 1 000 V/µs
PGAVm Maximum average gate power losses 3 W
IFGM Peak gate current 10 A
VFGM Peak gate voltage 12 V
VRGM Reverse peak gate voltage 10 V
Tjmin - Tjmax Operating temperature range -40 ÷ 125 °C
Tstgmin -
Tstgmax Storage temperature range -40 ÷ 125 °C
Unless otherwise specified Tj = 125 °C
Note 1: De-rating factor of 0.13% VRRM or VDRM per °C is applicable for Tj below 25 °C
5STF 10F3080
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/281/09 Jul-10 3 of 11
Characteristics Value Unit
min. typ. max.
VTM Maximum peak on-state voltage
ITM = 2 000 A 3.060
V
VT0 Threshold voltage 2.562
V
rT Slope resistance
IT1 = 1 587 A, IT2 = 4 760 A 0.246
mΩ
IDM Peak off-state current
VD = VDRM 100 mA
IRM Peak reverse current
VR = VRRM 100 mA
tgd Delay time
Tj = 25 °C, VD = 0.4 VDRM, ITM = ITAVm,
tr = 0.3 µs, IGT = 2 A
2.0 µs
tq1 Turn-off time
IT = 1 000 A, diT/dt = -50 A/µs,
VR = 100 V, VD = 2/3 VDRM,
dvD/dt = 50 V/µs
group of tq
5STF 10F3080
5STF 10F2880
5STF 10F3010
5STF 10F2810
80.0
100.0
µs
Qrr Recovery charge
the same conditions as at tq1 1 000
µC
IrrM Reverse recovery current
the same conditions as at tq1 170 A
IH Holding current Tj = 25 °C
Tj = 125 °C 250
150 mA
IL Latching current Tj = 25 °C
Tj = 125 °C 1 500
1 000
mA
VGT Gate trigger voltage
VD = 12V, IT = 4 A Tj = - 40 °C
Tj = 25 °C
Tj = 125 °C
0.25
4
3
2
V
IGT
Gate trigger current
VD = 12V, IT = 4 A Tj = - 40 °C
Tj = 25 °C
Tj = 125 °C
10
1000
500
300
mA
Unless otherwise specified Tj = 125 °C
5STF 10F3080
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/281/09 Jul-10 4 of 11
Thermal Parameters Value Unit
Rthjc Thermal resistance junction to case
double side cooling 16.0 K/kW
anode side cooling 25.0
cathode side cooling 45.0
Rthch Thermal resistance case to heatsink
double side cooling 4.0 K/kW
single side cooling 8.0
Transient Thermal Impedance
i 1 2 3 4
τi ( s ) 0.4653 0.1533 0.0375 0.0034
Ri( K/kW )
5.50 7.24 2.00 1.30
0
2
4
6
8
10
12
14
16
18
0.001 0.01 0.1 1 10
Square wave pulse duration t d ( s )
Transient thermal impedance junction
to case Zthjc ( K/kW )
Analytical function for transient
thermal impedance
∑
=τ−−= 4
1
1
iiithjc tRZ ))/exp((
Conditions:
Fm = 22 ± 2 kN, Double side cooled
Correction for periodic waveforms
180°
sine: add 1.3 K/kW
180°
rectangular:
add 1.8 K/kW
120°
rectangular:
add 3.0 K/kW
60°
rectangular:
add 5.1 K/kW
Fig. 2
Dependence transient thermal impedance junction
to case on square pulse
5STF 10F3080
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/281/09 Jul-10 5 of 11
On-State Characteristics
0
1000
2000
3000
4000
5000
6000
7000
8000
0 1 2 3 4 5 6
VT ( V )
IT ( A )
25 °C
Tj = 125
°C
Fig. 3
Maximum on-state characteristics
Gate Trigger Characteristics
0
1
2
3
4
5
6
00.2 0.4 0.6 0.8 1
IG ( A )
VG ( V )
+125 °C
+25 °C
-40 °C
IGTmin
V
GTmin
DC
0
2
4
6
8
10
12
14
0 2 4 6 8 10 12
IG ( A )
VG ( V )
DC
10 ms
1 ms
50 µs
VGTmax
IGTmax
Fig. 4
Gate trigger characteristics Fig. 5
Maximum peak gate power loss
5STF 10F3080
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/281/09 Jul-10 6 of 11
Surge Characteristics
0
10
20
30
110 100
t ( ms )
ITSM ( kA )
0
1
2
3
∫
i2dt (106 A2s)
I
TSM
∫
i2dt
0
2
4
6
8
10
12
14
110 100
Number n of cycles at 50 Hz
ITSM ( kA )
V
R
= 0 V
VR ≤ 0.5 VDRM
Fig. 6
Surge on-state current vs. pulse length,
half sine wave, single pulse,
VR = 0 V, Tj = Tjmax
Fig. 7
Surge on-state current vs. number
of pulses, half sine wave, Tj = Tjmax
5STF 10F3080
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/281/09 Jul-10 7 of 11
Power Loss and Maximum Case Temperature Characteristics
0
500
1000
1500
2000
2500
3000
3500
0 200 400 600 800 1000 1200
ITAV ( A )
PT ( W )
ψ = 30° 60° 90
°
120
°
180
°
DC
0
500
1000
1500
2000
2500
3000
3500
0200 400 600 800 1000 1200
ITAV ( A )
PT ( W )
ψ = 30
°
60
°
90
°
120
°
180
°
270
°
DC
Fig. 8
On-state power loss vs. average on-state
current, sine waveform, f = 50 Hz, T = 1/f Fig. 9
On-state power loss vs. average on-state
current, square waveform, f = 50 Hz, T = 1/f
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200
ITAV ( A )
TC ( °C )
180
°
60° 90
°
120
°
ψ = 30°
DC
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200
ITAV ( A )
TC ( °C )
180
°
DC
270
°
120
°
90
°
60
°
ψ = 30
°
Fig. 10
Max. case temperature vs. aver. on-state
current, sine waveform, f = 50 Hz, T = 1/f Fig. 11
Max. case temperature vs. aver. on-state
current, square waveform, f = 50 Hz, T = 1/f
Note 2: Figures number 8 ÷ 11 have been calculated without considering any turn-on and turn-off losses.
They are valid for f = 50 or 60 Hz operation.
5STF 10F3080
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/281/09 Jul-10 8 of 11
Turn-off Time, Parameter Relationship
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
25 50 75 100 125
Tj ( °C )
tq / tq1 ( - )
Maximum values of turn-off time at application
specific conditions are given by using this formula:
)/()/()( dtdi
t
t
dtdv
t
t
T
t
t
tt T
q
q
D
q
q
j
q
q
qq −⋅⋅⋅= 111
1
where:
1q
t is turn-off time at standard conditions,
see section "Characteristics"
)( j
q
qT
t
t
1 is factor to be taken from fig. 12
)/( dtdv
t
tD
q
q
1 is factor to be taken from fig. 13
)/( dtdi
t
tT
q
q−
1 is factor to be taken from fig. 14
Fig. 12
Normalised maximum turn-off time
vs. junction temperature
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.20
2.40
2.60
0200 400 600 800 1000
dv
D
/dt
( V/µs )
t
q
/ t
q1
( - )
0.80
0.90
1.00
1.10
1.20
1.30
1.40
0 200 400 600 800 1000
- diT/dt ( A/µs )
tq / tq1 ( - )
Fig. 13
Normalised maximum turn-off time
vs. rate of rise of off-state voltage Fig. 14
Normalised maximum turn-off time
vs. rate of fall of on-state current
5STF 10F3080
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/281/09 Jul-10 9 of 11
Turn-on Characteristics
0
6000
10 30
t
iG (t), vT (t), iT (t)
0
2500
diT/dt
tgd
v T (t)
iT (t)
ITM
0.5 ITM
0.1 I
TM
V D
0.9 V D
iG (t)
0.1 V D
tgt td
0.00
0.50
1.00
1.50
2.00
0 200 400 600 800 1000
diT/dt ( A/µs )
Won ( J )
Fig. 15
Typical waveforms and definition of symbols
at turn-on of a thyristor Fig. 16
Maximum turn-on energy per pulse vs.
rate of rise on-state current, Tj = Tjmax
5STF 10F3080
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/281/09 Jul-10 10 of 11
Turn-off Characteristics
-600
10
t
vT (t), iT (t)
-600
- diT/dt
tq
v T (t)
iT (t)
IrrM VR
Qrr
I
TM
VD
dv D/dt
100
1000
10000
10 100 1000
- diT/dt ( A/µs )
Qrr ( µC )
ITM = 2000 A
1000 A
500 A
Fig. 17
Typical waveforms and definition of symbols
at turn-off of a thyristor, inductive switching
without RC snubber
Fig. 18
Max. recovered charge vs. rate of fall
on-state current, trapezoid pulse,
VR = 100 V, Tj = Tjmax
10
100
1000
10000
10 100 1000
- diT/dt ( A/µs )
IrrM ( A )
ITM = 2000 A
1000 A
500 A
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0200 400 600 800 1000
- diT/dt ( A/µs )
Woff ( J )
VR = 2/3 VDRM
500 V
200 V
100 V
1000 V
Fig. 19
Max. reverse recovery current vs.
rate of fall on-state current, trapezoid pulse,
VR = 100 V, Tj = Tjmax
Fig. 20
Maximum turn-off energy per pulse vs.
rate of fall on-state current, trapezoid pulse,
inductive switching without RC snubber,
ITM = 2 000 A, Tj = Tjmax
5STF 10F3080
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/281/09 Jul-10 11 of 11
Notes:
