SPICE MODEL: MMBTA63 MMBTA64 MMBTA63 / MMBTA64 PNP SURFACE MOUNT DARLINGTON TRANSISTOR Features * * * * * Epitaxial Planar Die Construction Complementary NPN Types Available (MMBTA13 /MMBTA14) SOT-23 A Ideal for Medium Power Amplification and Switching * * * * * B TOP VIEW Available in Lead Free/RoHS Compliant Version (Note 3) B * * * Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0 8 High Current Gain Mechanical Data * * Dim C C E D E G Case: SOT-23 H Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 K J Moisture Sensitivity: Level 1 per J-STD-020C D M L Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 2 C Terminal Connections: See Diagram MMBTA63 Marking (See Page 2): K2E, K3E All Dimensions in mm E B MMBTA64 Marking (See Page 2): K3E Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.) Maximum Ratings @ TA = 25C unless otherwise specified Characteristic Symbol MMBTA63 MMBTA64 Unit Collector-Base Voltage VCBO -30 Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -10 V IC -500 mA Collector Current - Continuous (Note 1) Pd 300 mW RqJA 417 C/W Tj, TSTG -55 to +150 C Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics V @ TA = 25C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition V(BR)CEO -30 3/4 V IC = -100mA VBE = 0V Collector Cutoff Current ICBO 3/4 -100 nA VCB = -30V, IE = 0 Emitter Cutoff Current IEBO 3/4 -100 nA VEB = -10V, IC = 0 hFE 5,000 10,000 10,000 20,000 3/4 3/4 IC = -10mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -100mA, VCE = -5.0V IC = -100mA, VCE = -5.0V Collector-Emitter Saturation Voltage VCE(SAT) 3/4 -1.5 V IC = -100mA, IB = -100mA Base- Emitter Saturation Voltage VBE(SAT) 3/4 -2.0 V IC = -100mA, VCE = -5.0V fT 125 3/4 MHz VCE = -5.0V, IC = -10mA, f = 100MHz OFF CHARACTERISTICS (Note 2) Collector-Emitter Breakdown Voltage ON CHARACTERISTICS (Note 2) DC Current Gain MMBTA63 MMBTA64 MMBTA63 MMBTA64 SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. 3. No purposefully added lead. DS30055 Rev. 6 - 2 1 of 3 www.diodes.com MMBTA63 / MMBTA64 a Diodes Incorporated Ordering Information Notes: (Note 4) Device Packaging Shipping MMBTA63-7 MMBTA64-7 SOT-23 3000/Tape & Reel 4 For Packaging Details, go to our website at http:/ /www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBTA64-7-F. YM Marking Information KxE = Product Type Marking Code, ex: K2E = MMBTA63 YM = Date Code Marking Y = Year ex: N = 2002 Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D KxE Date Code Key VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 IC = 1000 IB TA = -50C TA = 25C 0.70 0.65 0.60 0.55 0.50 TA = 150C 0.45 0.40 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature DS30055 Rev. 6 - 2 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 2 of 3 www.diodes.com MMBTA63 / MMBTA64 10000000 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 5V TA = 150C hFE, DC CURRENT GAIN (NORMALIZED) 1000000 TA = 25C 100000 TA = -50C 10000 1000 100 1 100 10 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current 1.6 1.5 1.4 1.3 1.2 VCE = 5V 1.1 1.0 0.9 0.8 0.7 TA = -50C TA = 25C TA = 150C 0.6 0.5 0.4 0.3 0.2 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 5V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs. Collector Current DS30055 Rev. 6 - 2 3 of 3 www.diodes.com MMBTA63 / MMBTA64