DS30055 Rev. 6 - 2 1 of 3 MMBTA63 / MMBTA64
www.diodes.com ã Diodes Incorporated
MMBTA63 / MMBTA64
PNP SURFACE MOUNT DARLINGTON TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary NPN Types Available
(MMBTA13 /MMBTA14)
·Ideal for Medium Power Amplification and Switching
·High Current Gain
·Available in Lead Free/RoHS Compliant Version (Note 3)
Characteristic Symbol MMBTA63 MMBTA64 Unit
Collector-Base Voltage VCBO -30 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -10 V
Collector Current - Continuous (Note 1) IC-500 mA
Power Dissipation (Note 1) Pd300 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 417 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Maximum Ratings @ TA= 25°C unless otherwise specified
A
E
JL
TOP VIEW
M
BC
C
BE
H
G
D
D
K
Mechanical Data
·Case: SOT-23
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
·Terminal Connections: See Diagram
·MMBTA63 Marking (See Page 2): K2E, K3E
·MMBTA64 Marking (See Page 2): K3E
·Ordering & Date Code Information: See Page 2
·Weight: 0.008 grams (approx.)
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage V(BR)CEO -30 ¾VIC= -100mAV
BE = 0V
Collector Cutoff Current ICBO ¾-100 nA VCB = -30V, IE= 0
Emitter Cutoff Current IEBO ¾-100 nA VEB = -10V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain MMBTA63
MMBTA64
MMBTA63
MMBTA64
hFE
5,000
10,000
10,000
20,000
¾¾
IC = -10mA, VCE = -5.0V
IC = -10mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾-1.5 V IC = -100mA, IB = -100mA
Base- Emitter Saturation Voltage VBE(SAT) ¾-2.0 V IC = -100mA, VCE = -5.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product fT125 ¾MHz VCE = -5.0V, IC = -10mA,
f = 100MHz
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
E
B
C
Features
SPICE MODEL: MMBTA63 MMBTA64
DS30055 Rev. 6 - 2 2 of 3 MMBTA63 / MMBTA64
www.diodes.com
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Date Code Key
KxE = Product Type Marking Code, ex: K2E =
MMBTA63
YM = Date Code Marking
Y = Year ex: N = 2002
KxE
YM
Marking Information
Device Packaging Shipping
MMBTA63-7
MMBTA64-7 SOT-23 3000/Tape & Reel
(Note 4)
Ordering Information
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1
.
20
110 100 1000
V , COLLECTOR TO EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
IC
IB
= 1000
T = 150°C
A
T = 25°C
A
T = -50°C
A
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Tem
p
erature
150
200
250
300
350
0
Notes: 4 For Packaging Details, go to our website at http:/ /www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBTA64-7-F.
DS30055 Rev. 6 - 2 3 of 3 MMBTA63 / MMBTA64
www.diodes.com
100
1000
10000000
10000
100000
1000000
110 1000
100
h , DC CURRENT
FE
GAIN (NORMALIZED)
I , COLLECTOR CURRENT (mA)
C
Fig. 3, DC Current Gain vs
Collector Current
V=5V
CE
T = 150°C
A
T=25°C
A
T = -50°C
A
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1
.
6
0.1 110 100
V , BASE EMITTER VOLTAGE (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Base Emitter Voltage
vs. Collector Current
V=5V
CE
T = 150°C
A
T=25°C
A
T = -50°C
A
1
10
1000
100
110 100
f , GAIN BANDWIDTH PRODUCT (MHz)
T
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Gain Bandwidth Product vs.
Collector Current
V=5V
CE
