BC 807W, BC 808W
Oct-21-19991
PNP Silicon AF Transistors
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 817W, BC 818W (NPN)
1
3
VSO05561
2
Type Marking Pin Configuration Package
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
BC 807-16W
BC 807-25W
BC 807-40W
BC 808-16W
BC 808-25W
BC 808-40W
5As
5Bs
5Cs
5Es
5Fs
5Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
Maximum Ratings
Parameter Symbol UnitBC 808WBC 807W
45Collector-emitter voltage 25VCEO V
Collector-base voltage VCBO 50 30
Emitter-base voltage VEBO 5 5
DC collector current IC500 mA
Peak collector current ICM A1
Base current mA100IB
200IBM
Peak base current
Total power dissipation, TS = 130 °C mW250Ptot
150Tj
Junction temperature °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction ambient 1) RthJA K/W
215
Junction - soldering point RthJS
80
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
BC 807W, BC 808W
Oct-21-19992
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
V
BC 807W
BC 808W
45
25
V(BR)CEO
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
-
-
-
-
-
-
BC 807W
BC 808W
Collector-base breakdown voltage
IC = 10 µA, IB = 0
50
30
-
-
V(BR)CBO
--Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5
- 100- nAICBO
Collector cutoff current
VCB = 25 V, IE = 0
- - 50ICBO
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C
µA
IEBO - - nA100Emitter cutoff current
VEB = 4 V, IC = 0
160
250
350
250
400
630
-
100
160
250
hFE
hFE-grp. 16
hFE-grp. 25
hFE-grp. 40
DC current gain 1)
IC = 100 mA, VCE = 1 V
60
100
170
-
-
-
DC current gain 1)
IC = 300 mA, VCE = 1 V
hFE-grp. 16
hFE-grp. 25
hFE-grp. 40
-
-
-
hFE
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat - - 0.7 V
Base-emitter saturation voltage 1)
IC = 500 mA, IB = 50 mA
VBEsat - - 1.2 V
1) Pulse test: t ≤ 300µs, D = 2%
BC 807W, BC 808W
Oct-21-19993
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
fT- 200 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 10 - pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - 60 -
BC 807W, BC 808W
Oct-21-19994
Permissible Pulse Load RthJS = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy
0 20 40 60 80 100 120 °C 150
TA,TS
0
50
100
150
200
mW
300
P
tot
TS
0 20 40 60 80 100 120 °C 150
TA,TS
0
50
100
150
200
mW
300
P
tot
TA
0 20 40 60 80 100 120 °C 150
TA,TS
0
50
100
150
200
mW
300
P
tot
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector cutoff current ICBO = f(TA)
VCB = 25V
0
10
EHP00213
A
T
150
0
5
10
Ι
CBO
nA
50 100
1
10
2
10
4
10
˚C
typ
max
10
3
BC 807W, BC 808W
Oct-21-19995
DC current gain hFE = f(IC)
VCE = 1V
10
EHP00216
-1 3
10mA
0
10
3
10
5
5
100101
101
C
FE
h
Ι
2
10
2
10
˚C
100
5
25
˚C
-50
˚C
Transition frequency fT = f (IC)
VCE = 5V
10
EHP00210
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
0
10
EHP00215
CEsat
V
0.4 V 0.8
-1
10
0
10
1
3
10
5
5
Ι
C
mA
5
2
10
0.2 0.6
-50
25
150
˚C
˚C
˚C
Base-emitter saturation voltage
IC = f(VBEsat), hFE = 10
0
10
EHP00214
BEsat
V
2.0 V 4.0
-1
100
101
3
10
5
5
Ι
C
mA
5
2
10
1.0 3.0
˚C
-50
25
˚C
˚C
150
