2003. 3. 27 1/2
SEMICONDUCTOR
TECHNICAL DATA
MJD117/L
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 4
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
·High DC Current Gain.
: hFE=1000(Min.), ＠VCE=-4V, IC=-1A.
·Low Collector-Emitter Saturation Voltage.
·Straight Lead (IPAK, "L" Suffix)
·Complementary to MJD112/L.
MAXIMUM RATING (Ta=25℃)
DPAK
DIM MILLIMETERS
A
B
C
D
F
H
I
J
K
L
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
E
0.91 0.10M
0.90 0.1O
A
C
D
B
E
K
I
J
Q
H
FF
M
O
P
L
123
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10P
0.95 MAXQ
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Sustaining Voltage VCEO(SUS) IC=-30mA, IB=0 -100 - - V
Collector Cut-off Current
ICEO VCE=-50V, IB=0 - - -20 μA
ICBO VCB=-100V, IE=0 - - -20
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -2 mA
DC Current Gain hFE
VCE=-3V, IC=-0.5A 500 - -
VCE=-3V, IC=-2A 1,000 12,000 -
Collector-Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-8mA - - -2.0 V
Base-Emitter On Voltage VBE(ON) VCE=-3V, IC=-2A - - -2.8 V
Current Gain Bandwidth Product fTVCE=-10V, IC=0.75A, f=1MHz 25 - - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=0.1MHz - - 200 pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -100 V
Collector-Emitter Voltage VCEO -100 V
Emitter-Base Voltage VEBO -5 V
Collector Current
DC IC
-2
A
Pulse -4
Base Current DC IB-50 mA
Collector Power
Dissipation
Ta=25℃PC
1.0
W
Tc=25℃20
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
C
B
E
R
10kΩ0.6kΩ
R
12
= =
DIM MILLIMETERS
IPAK
D
B
Q
E
H
F F
C
A
P
L
I
J
123
A
B
C
D
E
F
G
H
I
J
L
P
Q
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K 2.0 0.2
K
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
2003. 3. 27 2/2
MJD117/L
Revision No : 4
SATURATION VOLTAGE
COLLECTOR CURRENT IC (A)
VCE(sat), VBE(sat) - IC
VCE(sat), VBE(sat) (V)
-0.1
-0.5
-0.3
-0.03-0.01 -0.1
-1
-3
-0.3 -1 -3 -5
-10 I /I =250
-5
C
V
BE(sat)
V
CE(sat)
B
COLLECTOR-BASE VOLTAGE VCB (V)
Cob - VCB
CAPACITANCE Cob (pF)
100
DC CURRENT GAIN hFE
50
-0.3-0.1-0.03-0.01
COLLECTOR CURRENT IC (mA)
hFE - IC
-1 -3 -5
300
500
1k
3k
5k V =-3V
CE
-0.1 -0.3 -1 -3 -10 -30 -50
10
30
50
100
300
500
PC - Ta
0
0
POWER DISSIPATION PC (W)
50 100 150 200
5
10
15
20
25
CASE TEMPERATURE Ta ( C)
COLLECTOR-EMITTER VOLTAGE VCE (V)
SAFE OPERATING AREA
COLLECTOR CURRENT IC (A)
-1
-0.01
-3 -10 -30 -100 -200
-0.03
-0.05
-0.1
-0.3
-0.5
-1
-3
-5
-10
SINGLE NONREPETIVE
PULSE Tc=25 C
CURVES MUST BE DREATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
I MAX.(PULSED) *
C
I MAX.
(CONTINUOUS)
C
DC OPERATION
100µS*
500µS*
1mS*
5mS*
Tc=25 C
Tc=25 C
Ta=25 C
1
2
1
2
