SEMICONDUCTOR MJD117/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A FEATURES I C J D *High DC Current Gain. B : hFE=1000(Min.), VCE=-4V, IC=-1A. E K Q *Straight Lead (IPAK, "L" Suffix) M *Low Collector-Emitter Saturation Voltage. O *Complementary to MJD112/L. H P F MAXIMUM RATING (Ta=25) 2 L 3 SYMBOL RATING UNIT Collector-Base Voltage VCBO -100 V 1. BASE Collector-Emitter Voltage VCEO -100 V 3. EMITTER Emitter-Base Voltage VEBO -5 V DC DPAK A Pulse Base Current DC Collector Power Ta=25 Dissipation Tc=25 2. COLLECTOR -2 IC Collector Current MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 0.2 5.0 + _ 1.10 + 0.2 _ 0.2 2.70 + _ 0.1 2.30 + 1.00 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 0.20 2.00 + _ 0.10 0.50 + _ 0.10 0.91+ _ 0.1 0.90 + _ 0.10 1.00 + 0.95 MAX -4 IB -50 mA I A C 1.0 PC J W D CHARACTERISTIC 1 F DIM A B C D E F H I J K L M O P Q B 20 Tj 150 Tstg -55150 P H E Storage Temperature Range DIM A B C D E F G H I J K L P Q K Q Junction Temperature G C F F L B 1 R1 R2 = 10k = 0.6k 2 3 MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 5.0 + 0.2 _ 0.2 1.10 + _ 0.6 9.50 + _ 0.1 2.30 + _ 0.1 0.76 + 1.0 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 2.0 + 0.2 _ 0.1 0.50 + _ 0.1 1.0 + 0.90 MAX 1. BASE 2. COLLECTOR 3. EMITTER E IPAK ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT V VCEO(SUS) IC=-30mA, IB=0 -100 - - ICEO VCE=-50V, IB=0 - - -20 ICBO VCB=-100V, IE=0 - - -20 Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -2 500 - - DC Current Gain hFE VCE=-3V, IC=-2A 1,000 12,000 - Collector-Emitter Sustaining Voltage A Collector Cut-off Current VCE=-3V, IC=-0.5A mA Collector-Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-8mA - - -2.0 V Base-Emitter On Voltage VBE(ON) VCE=-3V, IC=-2A - - -2.8 V 25 - - MHz - - 200 pF Current Gain Bandwidth Product Collector Output Capacitance 2003. 3. 27 Revision No : 4 fT Cob VCE=-10V, IC=0.75A, f=1MHz VCB=-10V, IE=0, f=0.1MHz 1/2 MJD117/L hFE - IC -10 VCE =-3V 3k SATURATION VOLTAGE VCE(sat), VBE(sat) (V) DC CURRENT GAIN hFE 5k VCE(sat), VBE(sat) - IC 1k 500 300 100 50 -0.01 -0.03 -0.1 -0.3 -1 -3 VBE(sat) -1 VCE(sat) -0.5 -0.3 -0.03 -0.1 -0.3 -1 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (A) Cob - VCB PC - Ta POWER DISSIPATION PC (W) CAPACITANCE Cob (pF) -3 -0.1 -0.01 -5 500 300 100 50 30 10 -0.1 I C/IB =250 -5 -3 -5 25 1 Tc=25 C 2 Ta=25 C 1 20 15 10 5 2 0 -0.3 -1 -3 -10 -30 -50 COLLECTOR-BASE VOLTAGE VCB (V) 0 50 100 150 200 CASE TEMPERATURE Ta ( C) SAFE OPERATING AREA COLLECTOR CURRENT IC (A) -10 I C MAX.(PULSED) * -5 -3 I C MAX. (CONTINUOUS) DC OPERATION Tc=25 C -1 10 0 S* 0 S* 50 1m S* S* 5m -0.5 -0.3 -0.1 * SINGLE NONREPETIVE PULSE Tc=25 C -0.05 -0.03 CURVES MUST BE DREATED LINEARLY WITH INCREASE IN TEMPERATURE -0.01 -1 -3 -10 -30 -100 -200 COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 3. 27 Revision No : 4 2/2