© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 1400 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ1400 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C 60 A
IC110 TC= 110°C 28 A
IF110 TC= 110°C 15 A
ICM TC= 25°C, 1ms 150 A
IATC= 25°C28A
EAS TC= 25°C 360 mJ
SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 120 A
(RBSOA) Clamped Inductive Load @ VCES < VCE
PCTC= 25°C 300 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062 in.) from Case for 10 260 °C
MdMounting Torque (IXGH & IXGK) 1.13/10 Nm/lb.in.
FCMounting Force (IXGX) 20..120/4.5..27 N/lb.
Weight TO-247 & PLUS247 6 g
TO-264 10 g
DS99736A(11/10)
GenX3TM 1400V
IGBTs w/ Diode
IXGH28N140B3H1
IXGX28N140B3H1
IXGK28N140B3H1
VCES = 1400V
IC110 = 28A
VCE(sat) ≤ ≤
≤ ≤
≤ 3.60V
Avalanche Rated
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
VGE(th) IC= 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 50 μA
Note 2, TJ = 125°C 1 mA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC= IC110, VGE = 15V, Note 1 3.00 3.60 V
TJ = 125°C 3.05
TO-247 (IXGH)
G = Gate E = Emitter
C = Collector Tab = Collector
GCETab
TO-264 (IXGK)
E
G
C
Tab
PLUS247 (IXGX)
GCE Tab
Features
zOptimized for Low Conduction and
Switching Losses
zSquare RBSOA
zAvalanche Rated
zAnti-Parallel Ultra Fast Diode
zHigh Current Handling Capability
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
zPower Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs IC = IC110, VCE = 10V, Note 1 12 19 S
Cies 1830 pF
Coes VCE = 25V, VGE = 0V, f = 1 MHz 163 pF
Cres 46 pF
Qg(on) 88 nC
Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES 12 nC
Qgc 38 nC
td(on) 16 ns
tri 36 ns
Eon 3.6 mJ
td(off) 190 400 ns
tfi 360 ns
Eoff 3.9 6.5 J
td(on) 16 ns
tri 50 ns
Eon 7.3 mJ
td(off) 215 ns
tfi 700 ns
Eoff 6.5 mJ
RthJC 0.42 °C/W
RthCs 0.21 °C/W
0.15 °C/W
Inductive load, TJ = 25°C
IC = IC110, VGE = 15V
VCE = 960V, RG = 5Ω
Note 3
Inductive load, TJ = 125°C
IC = IC110, VGE = 15V
VCE = 960V, RG = 5Ω
Note 3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
VF IF = 20A, VGE = 0V, Note 1 3.0 V
TJ = 150°C 2.65 V
trr 350 ns
IRM 18.5 A
RthJC 0.90 °C/W
IF = 20A, VGE = 0V, -diF/dt = -200A/μs,
VR = 1200V, TJ = 125°C
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Part must be heatsunk for high-temp Ices measurement.
3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
© 2010 IXYS CORPORATION, All Rights Reserved
e
∅ P
TO-247 Outline
1 2 3
Terminals: 1 - Gate 2 - Collector
3 - Emitted
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals: 1 - Gate
2 - Collector
3 - Emitter
PLUS247 Outline Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
TO-264 AA Outline
Terminals: 1 = Gate
2,4 = Collector
3 = Emitter
Back Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
Fi g . 1. Ou tput C h ar ac ter i sti cs @ T
J
= 25ºC
0
10
20
30
40
50
60
00.511.522.533.544.55
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fi g . 2. Exten ded Ou tp ut Ch ar acteristi cs @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
180
200
0 5 10 15 20 25
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
7V
11V
9V
13V
5V
Fi g . 3. Ou tp ut Ch ar act er i sti cs @ T
J
= 125º C
0
10
20
30
40
50
60
00.511.522.533.544.555.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 4. Dependence o f V
CE(sat)
on
Junction T emperature
0.6
0.8
1.0
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 56A
I
C
= 28A
I
C
= 14A
Fi g . 5. Co l l ector-to -Emitter Vo l t ag e
vs. Gate- to -Emitter Vol tag e
2
3
4
5
6
7
8
5 6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 56A
28A
14A
T
J
= 25ºC
Fig. 6. Input Admittance
0
20
40
60
80
100
120
34567891011
V
GE
- Volts
I
C
-
Amperes
T
J
= - 40ºC
25ºC
125ºC
© 2010 IXYS CORPORATION, All Rights Reserved
Fig. 7. Tr ansconductance
0
4
8
12
16
20
24
28
0 20406080100120
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060708090
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 28A
I
G
= 10mA
Fi g . 10. R ever se- B i as Safe Op er ati n g Are a
0
20
40
60
80
100
120
140
200 400 600 800 1000 1200 1400
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 5
dv / dt < 10V / ns
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
Fi g . 11. Maximu m Tran si en t Th er mal I mped an ce
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
2
4
6
8
10
12
14
16
18
0 10203040506070
R
G
- Ohms
E
off
- MilliJoules
3
5
7
9
11
13
15
17
19
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 960V
I
C
= 28A
I
C
= 56A
I
C
= 14A
Fig. 15. Inductive T urn-off Switching Times vs.
Gate Resistance
550
600
650
700
750
800
0 10203040506070
R
G
- Ohms
t
f i
- Nanoseconds
0
200
400
600
800
1000
t
d
(
off
)
- Nanoseconds
t
fi
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 960V
I
C
= 56A
I
C
= 28A
Fig. 13. Inductive Swiching Energy Loss vs.
Collecto r Current
0
2
4
6
8
10
12
14
10 15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
E
off
- MilliJoules
0
2
4
6
8
10
12
14
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5
,
V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Swiching Energy Loss vs.
Junction T emperature
0
2
4
6
8
10
12
14
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
2
4
6
8
10
12
14
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5
,
V
GE
= 15V
V
CE
= 960V
I
C
= 28A
I
C
= 56A
I
C
= 14A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
0
200
400
600
800
1000
1200
10 15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
f i
- Nanoseconds
50
100
150
200
250
300
350
t
d
(
off
)
- Nanoseconds
t
fi
t
d(off)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC
Fig. 17. Inductive Turn -off Switching T i mes vs.
Juncti on Temperature
200
300
400
500
600
700
800
900
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
100
130
160
190
220
250
280
310
t
d
(
off
)
- Nanoseconds
t
fi
t
d(off)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 960V
I
C
= 28A
I
C
= 56A
© 2010 IXYS CORPORATION, All Rights Reserved
Fi g . 18. I ndu cti ve Turn -o n S wit ch i n g Ti mes vs.
Gate R esistan ce
0
40
80
120
160
200
240
280
0 10203040506070
RG - Ohms
t
r i
- Nanoseconds
0
20
40
60
80
100
120
140
t
d
(
on
)
- Nanoseconds
t
ri
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 960V
I
C
= 56A
I
C
= 28A
Fig. 19. Inductive Turn-on Switching Ti mes vs.
Collector Current
0
20
40
60
80
100
120
140
160
10 15 20 25 30 35 40 45 50 55 60
IC - Amperes
t
r i
- Nanoseconds
4
8
12
16
20
24
28
32
36
t
d
(
on
)
- Nanoseconds
t
ri
t
d(on)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Tem perature
20
40
60
80
100
120
140
160
180
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
t
r i
- Nanoseconds
8
12
16
20
24
28
32
36
40
t
d
(
on
)
- Nanoseconds
t
ri
t
d(on)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 960V
I
C
= 28A
I
C
= 56A
IXYS REF: G_28N140B3H1(4A)11-29-10-B
IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
