TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 DEVICES LEVELS 2N1131 2N1131L JAN JANTX JANTXV 2N1132 2N1132L ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 600 mAdc PT 0.6 2.0 W TJ, Tstg -65 to +200 C Collector Current Total Power Dissipation (1) @ TA = +25C @ TC = +25C (2) Operating & Storage Junction Temperature Range TO-39 2N1131, 2N1132 NOTES: 1/ Derate linearly 3.43mW/C for TA > +25C 2/ Derate linearly 11.4mW/C for TC > +25C ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc V(BR)CEO 40 Collector- Base Breakdown Voltage IC = 10Adc V(BR)CBO Max. Unit Vdc Vdc 50 Emitter-Base Cutoff Current VEB = 5.0Vdc IEBO 100 Adc Collector-Emitter Cutoff Current VCE = 50Vdc, RBE 10 ohms ICER 10 mAdc ICBO 10 1.0 Adc Collector-Base Cutoff Current VCB = 50Vdc VCB = 30Vdc T4-LDS-0187 Rev. 1 (101882) TO-5 2N1131L, 2N1132L Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) (CONT.) Parameters / Test Conditions Symbol Min. Max. hFE 20 30 15 25 45 90 Unit ON CHARACTERTICS (3) Forward-Current Transfer Ratio IC = 150mAdc, VCE = 10Vdc IC = 5.0mAdc, VCE = 10Vdc 2N1131, L 2N1132, L 2N1131, L 2N1132, L Collector-Emitter Saturation Voltage IC = 150mAdc, IB = 15mAdc VCE(sat) 1.3 Vdc Base-Emitter Saturation Voltage IC = 150mAdc, IB = 15mAdc VBE(sat) 1.5 Vdc Min. Max. Unit 15 30 50 90 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz 2N1131, L 2N1132, L IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz Symbol hfe 2N1131, L 2N1132, L Small-Signal Open-Circuit Output Admittance IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz 20 30 1.0 5.0 mho 25 35 10 2.5 3.0 20 20 hob Small-Signal Short-Circuit Input Impedance IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz hib Magnitude of Common Emitter Small-Signal Short Circuit Forward-Current Transfer Ratio IC = 50mAdc, VCE = 10Vdc, f = 20MHz 2N1131, L 2N1132, L Output Capacitance VCB = 10Vdc, IE = 0, 100 kHz f 1.0MHz |hfe| Iutput Capacitance VEB = 0.5Vdc, IC = 0, 100 kHz f 1.0MHz Cobo 4.5 Cibo 80 pF pF SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time + Turn-Off Time (See figure 2 of MIL-PRF-177) Symbol t on + toff Min. Max. Unit 50 s (3) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0% T4-LDS-0187 Rev. 1 (101882) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r Dimensions Inches Millimeters Min Max Min Max .305 .335 7.75 8.51 .240 .260 6.10 6.60 .335 .370 8.51 9.40 .200 TP 5.08 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .050 1.27 .029 .045 0.74 1.14 .028 .034 0.71 0.86 .010 0.25 45 TP 45 TP Note 6 7, 8 7, 8, 12 7, 8 7, 8 7, 8 5 4 3 10 6 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 7. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by gauging procedure. 8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in and beyond LL minimum. 9. All three leads. 10. The collector shall be internally connected to the case. 11. Dimension r (radius) applies to both inside corners of tab. 12. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 13. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 14. * For L-suffix or non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For non-L suffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max.. * FIGURE 1. Physical dimensions 2N1131 and 2N1132 ( TO-39), 2N1131L and 2N1132L (TO-5). T4-LDS-0187 Rev. 1 (101882) Page 3 of 3