TECHNICAL DATA SHEET
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Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/454
T4-LDS-0 18 4 Rev . 1 (1 0 16 8 6) Page 1 of 6
DEVICES LEVELS
2N5660 2N5661 2N5662 JAN
2N5660U3 2N5661U3 2N5663 JANTX
JANTXV
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N5660
2N5662 2N5661
2N5663 Unit
Collector-Emitter Voltage VCEO 200 300 Vdc
Collector-Base Voltage VCBO 250 400 Vdc
Collector-Emitter Voltage VCER 250 400 Vdc
Emitter-Base Voltage VEBO 6 Vdc
Base Current IB 0.5 Adc
Collector Current IC 2.0 Adc
Operating & Storage Junction Temperature
Range Tj, Tstg -65 to +200 °C
2N5660
2N5661 2N5662
2N5663
Total Power Dissipation
@ TA = +25°C (1)
@ TC = +100°C PT
2.0 (1)
20 (3)
1.0 (2)
15 (4) W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJC
R
JA
5.0
87.5
6.7
175 °C/W
Thermal Resistance, Junction-to-Case
2N5660U3
2N5661U3
RθJC 4.5
4.0
°C/W
Note:
1. Derate linearly 11.4mW/°C for TA > +25°C
2. Derate linearly 5.7mW/°C for TA > +25°C
3. Derate linearly 200mW/°C for TC > +100°C
4. Derate linearly 150mW/°C for TC > +100°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10mAdc 2N5660, U3, 2N5662
2N5661, U3, 2N5663
200
300 Vdc
Collector-Base Breakdown Voltage
V(BR)CER
IC = 10mAdc, RBE = 100Ω 2N5660, U3, 2N5662
2N5661, U3, 2N5663
250
400 Vdc
TO-66
2N5660, 2N5 661
TO-5
2N5662, 2N5 663
U3
2N5660U3, 2N5661U3