© 2014 IXYS CORPORATION, All Rights Reserved DS99366F(04/14)
IXFT44N50P
IXFH44N50P
IXFK44N50P
PolarTM HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 500 V
VDGR TJ= 25C to 150C, RGS = 1M500 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C 44 A
IDM TC= 25C, Pulse Width Limited by TJM 110 A
IATC= 25C44 A
EAS TC= 25C 1.7 J
dv/dt IS IDM, VDD VDSS, TJ 150°C 10 V/ns
PDTC= 25C 658 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-247& TO-264) 1.13/10 Nm/lb.in
Weight TO-268 4 g
TO-247 6 g
TO-264 10 g
VDSS = 500V
ID25 = 44A
RDS(on)
140m
Features
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 500 V
VGS(th) VDS = VGS, ID = 4mA 3.0 5.0 V
IGSS VGS = 30V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS= 0V 25 A
TJ = 125C 500 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 140 m
G = Gate D = Drain
S = Source Tab = Drain
TO-268 (IXFT)
S
G
D (Tab)
TO-247 (IXFH)
G
SD (Tab)
D
TO-264 (IXFK)
S
G
D
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT44N50P IXFH44N50P
IXFK44N50P
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 20 32 S
Ciss 5440 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 639 pF
Crss 40 pF
td(on) 28 ns
tr 29 ns
td(off) 85 ns
tf 27 ns
Qg(on) 98 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 35 nC
Qgd 30 nC
RthJC 0.19 C/W
RthCS TO-247 0.21C/W
RthCS TO-264 0.15 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 44 A
ISM Repetitive, Pulse Width Limited by TJM 110 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 200 ns
IRM 6.0 A
QRM 0.6 μC
IF = 25A, -di/dt = 100A/s
VR = 100V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3 (External)
TO-268 Outline
Terminals: 1 - Gate 2,4 - Drain
3 - Source
e
P
TO-247 Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals: 1 - Gate
2 - Drain
3 - Source
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
Dim.
TO-264 AA Outline
© 2014 IXYS CORPORATION, All Rights Reserved
IXFT44N50P IXFH44N50P
IXFK44N50P
Fig. 1. Output Characteristics
@ T
J
= 25ºC
0
5
10
15
20
25
30
35
40
45
01234567
V
DS
- Volts
I
D
- Am peres
VGS
= 10V
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
90
100
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Am peres
VGS
= 10V
8V
7V
5V
6V
Fig. 3. Output Characteristics
@ T
J
= 125ºC
0
5
10
15
20
25
30
35
40
45
0 2 4 6 8 10 12 14 16
V
DS
- Volts
I
D
- Am peres
VGS
= 10V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 2 2A Valu e
vs. Junction Temperature
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- D egrees Cent igr ade
R
DS(on)
- Norm alized
VGS
= 10V
I D = 44A
I D = 22A
Fig. 5. R
DS(on)
No rmalized to I
D
= 22A Value
vs. Drain Curren t
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0 102030405060708090100
I
D
- Amperes
R
DS(on)
- Norm alized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
5
10
15
20
25
30
35
40
45
50
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Cent igr ade
I
D
- Am peres
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT44N50P IXFH44N50P
IXFK44N50P
Fig. 7. Input Admittanc e
0
10
20
30
40
50
60
3.5 4 4.5 5 5.5 6 6.5
V
GS
- Volts
I
D
- Am peres
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
0 10203040506070
I
D
- Amperes
g
f s
- S iemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Fo rward Voltage Drop of
Intrins ic D iode
0
20
40
60
80
100
120
140
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
V
SD
- Volts
I
S
- A m peres
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100
Q
G
- Nan oC oulombs
V
GS
- Volts
V
DS
= 250V
I
D
= 22A
I
G
= 10m A
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
C apacitance - P icoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
10 100 1000
V
DS
- Volts
I
D
- Am peres
T
J
= 150ºC
T
C
= 25ºC
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
© 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: F_44N50P(8J) 03-21-06-*B
IXFT44N50P IXFH44N50P
IXFK44N50P
Fig. 13. Maximum Transient Thermal Resistance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
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