DATA SH EET
Product data sheet
Supersedes data of 2004 Mar 26
2004 Jun 22
DISCRETE SEMICONDUCTORS
BZX585 series
Voltage regulator diodes
M3D319
2004 Jun 22 2
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX585 series
FEATURES
Total power dissipation: max. 300 mW
Two tolerance series: ± 2 % and ± 5 %
Working voltage range: nominal 2.4 V to 75 V
(E24 range)
Non-repeti tive pea k reverse power dissipat ion: max.
40 W.
APPLICATIONS
General regulation functions.
DESCRIPTION
Low-power vo ltage regulator diodes encapsulated in an
ultra small SOD523 plastic SMD package.
The diodes are availabl e in the normalized E24 ± 2 %
(BZX585-B) and ± 5 % (BZX585-C) tolerance range.
The series consists of 37 types with nominal working
voltages fro m 2.4 V to 75 V.
PINNING
PIN DESCRIPTION
1cathode
2anode
handbook, halfpage
;
;
12
Top view
MAM387
Fig.1 Simplified outline (SO D5 23) and symbol.
The marking bar indicates the cathode.
MARKING
TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE
Marking codes for BZX585-B2V4 to BZX585-B75
BZX585-B2V4 C1 BZX585-B6V2 E1 BZX585-B16 EA BZX585-B43 EM
BZX585-B2V7 C2 BZX585-B6V8 E2 BZX585-B18 EB BZX585-B47 EN
BZX585-B3V0 C3 BZX585-B7V5 E3 BZX585-B20 EC BZX585-B51 EP
BZX585-B3V3 C4 BZX585-B8V2 E4 BZX585-B22 ED BZX585-B56 ER
BZX585-B3V6 C5 BZX585-B9V1 E5 BZX585-B24 EE BZX585-B62 ES
BZX585-B3V9 C6 BZX585-B10 E6 BZX585-B27 EF BZX585-B68 ET
BZX585-B4V3 C7 BZX585-B11 E7 BZX585-B30 EG BZX585-B75 EU
BZX585-B4V7 C8 BZX585-B12 E8 BZX585-B33 EH
BZX585-B5V1 C9 BZX585-B13 E9 BZX585-B36 EK
BZX585-B5V6 C0 BZX585-B15 E0 BZX585-B39 EL
2004 Jun 22 3
NXP Semiconductors Pr oduct data sheet
Voltage regulator diodes BZX585 series
ORDERING INFORMATION
LIMITING VALUES
In accordance with th e A b solute Maxi mum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab.
Marking codes for BZX585-C2V4 to BZX585-C75
BZX585-C2V4 F1 BZX585-C6V2 H1 BZX585-C16 HA BZX585-C43 HM
BZX585-C2V7 F2 BZX585-C6V8 H2 BZX585-C18 HB BZX585-C47 HN
BZX585-C3V0 F3 BZX585-C7V5 H3 BZX585-C20 HC BZX585-C51 HP
BZX585-C3V3 F4 BZX585-C8V2 H4 BZX585-C22 HD BZX585-C56 HR
BZX585-C3V6 F5 BZX585-C9V1 H5 BZX585-C24 HE BZX585-C62 HS
BZX585-C3V9 F6 BZX585-C10 H6 BZX585-C27 HF BZX585-C68 HT
BZX585-C4V3 F7 BZX585-C11 H7 BZX585-C30 HG BZX585-C75 HU
BZX585-C4V7 F8 BZX585-C12 H8 BZX585-C33 HH
BZX585-C5V1 F9 BZX585-C13 H9 BZX585-C36 HK
BZX585-C5V6 F0 BZX585-C15 H0 BZX585-C39 HL
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
BZX585-B2V4
to
BZX585-B75
Plastic surfa ce moun ted package; 2 leads SOD523
BZX585-C2V4
to
BZX585-C75
Plastic surfa ce moun ted package; 2 leads SOD523
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
IFcontinuous forward current 200 mA
IZSM non-repe titiv e pe ak reverse
current tp = 100 μs; square wave;
Tamb = 25 °C prior to surg e see Tables 1 and 2
PZSM non-repe titiv e pe ak reverse
power dissipation tp = 100 μs; square wave;
Tamb = 25 °C prior to surg e 40 W
Ptot total power dissipation Tamb = 25 °C; note 1 300 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 65 +150 °C
TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE
2004 Jun 22 4
NXP Semiconductors Pr oduct data sheet
Voltage regulator diodes BZX585 series
ELECTRICAL CHARACTERISTIC S
Total BZX585-B and C series
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage IF = 10 mA; see Fig.2 0.9 V
IF = 100 mA; see Fig.2 1.1 V
IRreverse current
BZX585-B/C2V4 VR = 1 V 50 μA
BZX585-B/C2V7 VR = 1 V 20 μA
BZX585-B/C3V0 VR = 1 V 10 μA
BZX585-B/C3V3 VR = 1 V 5 μA
BZX585-B/C3V6 VR = 1 V 5 μA
BZX585-B/C3V9 VR = 1 V 3 μA
BZX585-B/C4V3 VR = 1 V 3 μA
BZX585-B/C4V7 VR = 2 V 3 μA
BZX585-B/C5V1 VR = 2 V 2 μA
BZX585-B/C5V6 VR = 2 V 1 μA
BZX585-B/C6V2 VR = 4 V 3 μA
BZX585-B/C6V8 VR = 4 V 2 μA
BZX585-B/C7V5 VR = 5 V 1 μA
BZX585-B/C8V2 VR = 5 V 700 nA
BZX585-B/C9V1 VR = 6 V 500 nA
BZX585-B/C10 VR = 7 V 200 nA
BZX585-B/C11 VR = 8 V 100 nA
BZX585-B/C12 VR = 8 V 100 nA
BZX585-B/C13 VR = 8 V 100 nA
BZX585-B/C15 to 75 VR = 0.7VZnom 50 nA
2004 Jun 22 5
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX585 series
Table 1 Per type BZX585-B/C2V4 to B/C24
Tamb = 25 °C unle ss otherwise spe cified .
BZX585-
B or C
XXX
WORKING VOLTAGE
VZ (V)
at IZtest = 5 mA
DIFFERENTIAL RESISTANCE
rdif (Ω)TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see figs 3 AND 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 μs
Tol. ± 2% (B) Tol. ± 5% (C) at IZtest = 1 mA at IZtest = 5 mA
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.
2V4 2.35 2.45 2.28 2.52 275 400 70 100 1.3 450 6.0
2V7 2.65 2.75 2.57 2.84 300 450 75 100 1.4 440 6.0
3V0 2.94 3.06 2.85 3.15 325 500 80 95 1.6 425 6.0
3V3 3.23 3.37 3.14 3.47 350 500 85 95 1.8 410 6.0
3V6 3.53 3.67 3.42 3.78 375 500 85 90 1.9 390 6.0
3V9 3.82 3.98 3.71 4.10 400 500 85 90 1.9 370 6.0
4V3 4.21 4.39 4.09 4.52 410 600 80 90 1.7 350 6.0
4V7 4.61 4.79 4.47 4.94 425 500 50 80 1.2 325 6.0
5V1 5.00 5.20 4.85 5.36 400 480 40 60 0.5 300 6.0
5V6 5.49 5.71 5.32 5.88 80 400 15 40 1.0 275 6.0
6V2 6.08 6.32 5.89 6.51 40 150 610 2.2 250 6.0
6V8 6.66 6.94 6.46 7.14 30 80 615 3.0 215 6.0
7V5 7.35 7.65 7.13 7.88 15 80 210 3.6 170 4.0
8V2 8.04 8.36 7.79 8.61 20 80 210 4.3 150 4.0
9V1 8.92 9.28 8.65 9.56 20 100 210 5.2 120 3.0
10 9.80 10.20 9.50 10.50 20 150 210 6.0 110 3.0
11 10.78 11.22 10.45 11.55 25 150 210 6.9 110 2.5
12 11.76 12.24 11.40 12.60 25 150 210 7.9 105 2.5
13 12.74 13.26 12.35 13.65 25 170 210 8.8 105 2.5
15 14.70 15.30 14.25 15.75 25 200 315 10.7 100 2.0
16 15.68 16.32 15.20 16.80 50 200 10 40 12.4 90 1.5
18 17.64 18.36 17.10 18.90 50 225 10 45 14.4 80 1.5
20 19.60 20.40 19.00 21.00 60 225 15 55 16.4 70 1.5
22 21.56 22.44 20.90 23.10 60 250 20 55 18.4 60 1.25
24 23.52 24.48 22.80 25.20 60 250 25 70 20.4 55 1.25
2004 Jun 22 6
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX585 series
Table 2 Per type BZX585-B/C27 to B/C75
Tamb = 25 °C unle ss otherwise spe cified .
THERMAL CHARACTE RISTICS
Notes
1. Device mounted o n a FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab.
2. Solder point at cathode tab.
BZX585-
B or C
XXX
WORKING VOLTAGE
VZ (V)
at IZtest = 2 mA
DIFFERENTIAL RESISTANCE
rdif (Ω)TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
(see figs 3 and 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE
PEAK REVERSE
CURRENT
IZSM (A) at tp = 100 μs
Tol. ± 2 % (B) Tol. ± 5 % (C) at IZtest = 0.5 mA at IZtest = 2 mA
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.
27 26.46 27.54 25.65 28.35 65 300 25 80 23.4 50 1.0
30 29.40 30.60 28.50 31.50 70 300 30 80 26.6 50 1.0
33 32.34 33.66 31.35 34.65 75 325 35 80 29.7 45 0.9
36 35.28 36.72 34.20 37.80 80 350 35 90 33.0 45 0.8
39 38.22 39.78 37.05 40.95 80 350 40 130 36.4 45 0.7
43 42.14 43.86 40.85 45.15 85 375 45 150 41.2 40 0.6
47 46.06 47.94 44.65 49.35 85 375 50 170 46.1 40 0.5
51 49.98 52.02 48.45 53.55 90 400 60 180 51.0 40 0.4
56 54.88 57.12 53.20 58.80 100 425 70 200 57.0 40 0.3
62 60.76 63.24 58.90 65.10 120 450 80 215 64.4 35 0.3
68 66.64 69.36 64.60 71.40 150 475 90 240 71.7 35 0.25
75 73.50 76.50 71.25 78.75 170 500 95 255 80.2 35 0.2
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 350 K/W
Rth(j-s) thermal resistance from junction to solder point note 2 65 K/W
2004 Jun 22 7
NXP Semiconductors Pr oduct data sheet
Voltage regulator diodes BZX585 series
GRAPHICAL DATA
handbook, halfpage
0.6 1
300
100
0
200
MBG781
0.8 VF (V)
IF
(mA)
Fig.2 Forward current as a function of forward
voltage; typical values.
Tamb = 25 °C.
handbook, halfpage
0.5
2
10
1
10
2
MLD444
1IZ (mA)
SZ
(mV/K)
10
1.5
1
0.5
0
2V4
4V7
4V3
3V9
3V6
3V3
3V0
2V7
Fig.3 Temperature coefficient as a funct ion of
working current; typical values.
BZX585-B/C2V4 to B/C4V7.
Tamb = 25 °C to 150 °C.
handbook, halfpage
12
4
4
8
0
MLD445
101110
IZ (mA)
SZ
(mV/K)
102
15
13
12
11
10
9V1
5V6
5V1
8V2
7V5
6V8
6V2
Fig.4 Temperature coefficient as a funct ion of
working current; typical values.
BZX585-B/C5V1 to B/C15.
Tamb = 25 °C to 150 °C.
2004 Jun 22 8
NXP Semiconductors Pr oduct data sheet
Voltage regulator diodes BZX585 series
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOD523 SC-79 02-12-13
06-03-16
P
lastic surface-mounted package; 2 leads SOD52
3
0 0.5 1 mm
scale
D
12
HE
Ebp
A
c
vMA
A
UNIT bpcDEv
mm
AH
E
DIMENSIONS (mm are the original dimensions)
Note
1. The marking bar indicates the cathode.
(1) 0.34
0.26 0.17
0.11 0.1
0.85
0.75
1.25
1.15
0.65
0.58 1.65
1.55
2004 Jun 22 9
NXP Semiconductors Pr oduct data sheet
Voltage regulator diodes BZX585 series
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
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Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R76/04/pp10 Date of release: 2004 Jun 22 Document order nu mber: 9397 750 13303