BONDING PROCEDURE FOR FET CHIPs
Caution must be excercised to prevent static build up by proper grounding of all equipment and per-
sonnel. All operations must be performed in a clean, dust-free and dry environment.
1. Storage Condition: Store in a clean, dry nitrogen environment.
2. Die-Attach
2.1 The die-attach station must have an accurate temperature control, and an inert
forming gas should be used.
2.2 Chips should be kept at room temperature, except during die-attach.
2.3 Place package or carrier on the heated stage.
2.4 Place the solder at the position where the chip will be bonded.
2.5 Lightly grasp the chip edges using tweezers and scrub the die onto the Au-Sn
solder preform. The die attach conditions are: 300 to 310°C for 30 to 60 seconds.
The Au-Sn(80-20) solder preform volume should be about 3.2x10-3 mm3for FSX017/001.
3. Wire Bonding
3.1 Bonding Condition
The bonder must be properly grounded. Wire bonding should be performed with a
thermal compression bonder using 0.7 to 1.0 mil diameter, half hard, 3-8%
elongation gold wire.
3.2 Wire Layout
The wire bonding should be performed as shown in the following example.
Bonding Diagram Chip Outline
FSX017X/001