ITT SEMICOND/ INTERMETALL SOE D MM 4642711 0002831 15T MBISI BA282, BA283 TOTS 1 Silicon Epitaxial Planar Diode Switches f ] for electronic bandswitching in radio and TV tuners in the 2 | frequency range of 50 ... 1000 MHz. The dynamic forward < T resistance is constant and very small over a wide range of E max.1.9 frequency and forward current. The reverse capacitance is also small and largely independent of the reverse voltage. oa Cathode in Mark | max. 0,52 % These diodes are delivered taped. Glass case JEDEC DO-35 Details see Taping. 54 A 2 according to DIN 41 880 Weight approx. 0.13 g Dimensions in mm Absolute Maximum Ratings Symbol Value Unit Reverse Voltage Ver 35 Vv Forward Current at Tamp = 25 C lp 100 mA Junction Temperature T, 150 C Storage Temperature Range Ts 55 to +150 C 112ITT SEMICOND/ INTERMETALL SOE D MM 4682711 0002832 O96 MISTI BA282, BA283 Characteristics at Tan, = 25C Symbol Min. Typ. Max. Unit Forward Voltage Ve - - 1 V at lr = 100 mA Leakage Current ln - - 50 nA at Vp = 20 V Dynamic Forward Resistance at f = 50 to 1000 MHz, Ir = 3mA BA282 rt - - 0.7 0 BA283 ri - - 1.2 0 at f = 50 to 1000 MHz, Ir = 10 mA BA282 ty - - 0.5 2 BA283 ff - - 0.9 2 Capacitance at Vr =1 V, f = 1 MHz Crot _- - 1.5 pF at Va = 3 V,f = 1 MHz BA282 Crot - - 1.25 pF BA283 Crot - - 1.2 pF Series Inductance across Case L, - 2.5 - nH Capacitance Dynamic forward resistance versus reverse voltage versus forward current pF BA 282, BA 283 Q BA 282,BA 283 F=25C Tarnb= 25 C \ f=1MHz N \ 5 N Crot \ " \ BA 282,BA 283 X [1 kHz N TN \ \ 1 IN 1 I] N N NN BA 283 100MHz 05 s T | BA 282 100 MHz ae rh] 0,2 0 0,1 Oh 2 s 1 2 8s 10 2 8s 100V 1 2 s 10 2 5 100mA Ip Ir 113