IXTY18P10T IXTA18P10T IXTP18P10T TrenchPTM Power MOSFETs VDSS ID25 = = RDS(on) P-Channel Enhancement Mode Avalanche Rated -100V -18A 120m TO-252 (IXTY) G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C -100 V VDGR TJ = 25C to 150C, RGS = 1M -100 V VGSS Continuous 15 V VGSM Transient 25 V ID25 TC = 25C -18 A IDM TC = 25C, Pulse Width Limited by TJM - 60 A IA EAS TC = 25C TC = 25C -18 200 A mJ PD TC = 25C 83 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 1.13 / 10 Nm/lb.in. 0.35 2.50 3.00 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A -100 VGS(th) VDS = VGS, ID = - 250A - 2.5 IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = -10V, ID = 0.5 * ID25, Note 1 D (Tab) TO-220AB (IXTP) G D (Tab) D = Drain Tab = Drain Features z International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG z V z z Easy to Mount Space Savings High Power Density Applications - 3 A -100 A z 120 m z z z z z (c) 2013 IXYS CORPORATION, All Rights Reserved DS G = Gate S = Source z 50 nA TJ = 125C S Advantages V - 4.5 G High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS99966C(01/13) IXTY18P10T IXTA18P10T IXTP18P10T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = 0.5 * ID25, Note 1 8 Ciss Coss 13 S 2100 pF 185 pF 80 pF VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 10 (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 19 ns 26 ns 44 ns Dim. 22 ns A A1 2.19 0.89 39 nC A2 b 17 nC 9 nC 1.5 C/W RthJC RthCS TO-252 Outline TO-220 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. -18 A Repetitive, Pulse Width Limited by TJM - 72 A VSD IF = -18A, VGS = 0V, Note 1 -1.5 V trr QRM IRM IF = - 9A, -di/dt = -100A/s VR = - 50V, VGS = 0V Note 62 164 - 5.3 Pins: 1 - Gate 3 - Source Millimeter Min. Max. 2,4 - Drain Inches Min. Max. 2.38 1.14 0.086 0.035 0.094 0.045 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC TO-220 Outline ns nC A 1: Pulse test, t 300s, duty cycle, d 2%. TO-263 Outline 1. 2. 3. 4. Gate Drain Source Drain Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 Pins: 1 - Gate 3 - Source 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTY18P10T IXTA18P10T IXTP18P10T Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C -18 -70 VGS = -10V - 9V - 8V -16 VGS = -10V -60 - 9V -14 -50 - 7V ID - Amperes ID - Amperes -12 -10 - 6V -8 -6 - 8V -40 - 7V -30 - 6V -20 -4 -10 - 5V -2 0 0 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 0 -2.0 -5 -10 -20 -25 -30 VDS - Volts Fig. 3. Output Characteristics @ T J = 125C Fig. 4. RDS(on) Normalized to ID = - 9A Value vs. Junction Temperature 2.1 VGS = -10V - 9V - 8V - 7V -14 -12 -10 - 6V -8 -6 - 5V -4 VGS = -10V 1.9 R DS(on) - Normalized -16 1.7 I D = -18A 1.5 I D = - 9A 1.3 1.1 0.9 0.7 -2 0.5 0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -50 -3.5 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 9A Value vs. Drain Current 2.4 Fig. 6. Maximum Drain Current vs. Case Temperature -20 VGS = -10V 2.2 -18 -16 TJ = 125C 2.0 -14 ID - Amperes R DS(on) - Normalized -15 VDS - Volts -18 ID - Amperes - 5V 1.8 1.6 1.4 TJ = 25C -12 -10 -8 -6 1.2 -4 1.0 -2 0 0.8 0 -5 -10 -15 -20 -25 -30 -35 ID - Amperes (c) 2013 IXYS CORPORATION, All Rights Reserved -40 -45 -50 -55 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTY18P10T IXTA18P10T IXTP18P10T Fig. 8. Transconductance Fig. 7. Input Admittance 20 -24 TJ = - 40C 18 -20 16 TJ = 125C 25C - 40C -12 g f s - Siemens ID - Amperes 25C 14 -16 -8 12 125C 10 8 6 4 -4 2 0 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 0 -6.5 0 -2 -4 -6 -8 VGS - Volts -55 -10 -50 -9 VDS = - 50V -45 -8 I D = - 9A -40 -14 -16 -18 -20 -22 -24 I G = -1mA -7 -35 VGS - Volts IS - Amperes -12 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode -30 -25 -20 TJ = 125C -6 -5 -4 -3 -15 TJ = 25C -10 -2 -1 -5 0 -0.3 0 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 0 -1.3 5 10 15 20 25 30 35 40 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10,000 - 100 f = 1 MHz RDS(on) Limit 100s Ciss 1,000 25s - 10 ID - Amperes Capacitance - PicoFarads -10 ID - Amperes Coss 100 1ms -1 Crss 10ms 100ms TJ = 150C TC = 25C Single Pulse 10 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. - 0.1 -1 - 100 - 10 VDS - Volts -1000 IXTY18P10T IXTA18P10T IXTP18P10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 30 29 28 28 26 25 I D t r - Nanoseconds t r - Nanoseconds VDS = - 50V VDS = - 50V 27 RG = 10 , VGS = -10V 29 RG = 10 , VGS = -10V = -18A 24 23 TJ = 25C 27 26 25 24 TJ = 125C 22 I D 23 = - 9A 21 22 20 21 25 35 45 55 65 75 85 95 105 115 125 -9 -10 -11 -12 -13 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 80 tr td(on) - - - - 24 40 20 30 18 20 16 10 14 18 20 22 24 26 28 23 46 22 21 38 20 34 25 30 35 45 55 54 tf td(off) - - - - 51 23 42 TJ = 25C 39 36 TJ = 125C 20 19 -11 -12 -13 -14 -15 ID - Amperes (c) 2013 IXYS CORPORATION, All Rights Reserved -16 -17 -18 t f - Nanoseconds t f - Nanoseconds 45 -10 95 105 115 30 125 110 60 tf 55 TJ = 125C, VGS = -10V 100 td(off) - - - - 90 VDS = - 50V 50 80 I 45 D = - 9A, -18A 70 40 60 35 50 30 40 25 30 33 20 20 30 15 10 10 12 14 16 18 20 22 24 RG - Ohms 26 28 30 32 34 t d(off) - Nanoseconds 24 t d(off) - Nanoseconds 48 VDS = - 50V -9 85 65 RG = 10, VGS = -10V 21 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 27 22 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 25 42 I D = -18A, - 9A RG - Ohms 26 50 RG = 10, VGS = -10V 19 0 16 td(off) - - - - VDS = - 50V t f - Nanoseconds t r - Nanoseconds I D = -18A, - 9A 22 14 -18 t d(off) - Nanoseconds 50 t d(on) - Nanoseconds 60 24 12 -17 54 tf 70 VDS = - 50V 10 -16 25 TJ = 125C, VGS = -10V 26 -15 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 30 28 -14 ID - Amperes IXTY18P10T IXTA18P10T IXTP18P10T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - C / W 10 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_18P10T(A1)11-05-10-A