© 2013 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C -100 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ-100 V
VGSS Continuous ±15 V
VGSM Transient ±25 V
ID25 TC= 25°C -18 A
IDM TC= 25°C, Pulse Width Limited by TJM - 60 A
IATC= 25°C -18 A
EAS TC= 25°C 200 mJ
PDTC= 25°C83W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-252 0.35 g
TO-263 2.50 g
TO-220 3.00 g
DS99966C(01/13)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250μA -100 V
VGS(th) VDS = VGS, ID = - 250μA - 2.5 - 4.5 V
IGSS VGS = ± 15V, VDS = 0V ±50 nA
IDSS VDS = VDSS, VGS = 0V - 3 μA
TJ = 125°C -100 μA
RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 120 mΩ
TrenchPTM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTY18P10T
IXTA18P10T
IXTP18P10T
VDSS = -100V
ID25 = -18A
RDS(on) ≤≤
≤≤
≤ 120mΩΩ
ΩΩ
Ω
Features
zInternational Standard Packages
z Avalanche Rated
zExtended FBSOA
zFast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh-Side Switching
zPush Pull Amplifiers
zDC Choppers
zAutomatic Test Equipment
zCurrent Regulators
zBattery Charger Applications
G = Gate D = Drain
S = Source Tab = Drain
TO-252 (IXTY)
TO-263 AA (IXTA)
G
S
D (Tab)
GDS
TO-220AB (IXTP)
D (Tab)
G
S
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY18P10T IXTA18P10T
IXTP18P10T
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 8 13 S
Ciss 2100 pF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 185 pF
Crss 80 pF
td(on) 19 ns
tr 26 ns
td(off) 44 ns
tf 22 ns
Qg(on) 39 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 17 nC
Qgd 9 nC
RthJC 1.5 °C/W
RthCS TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V -18 A
ISM Repetitive, Pulse Width Limited by TJM - 72 A
VSD IF = -18A, VGS = 0V, Note 1 -1.5 V
trr 62 ns
QRM 164 nC
IRM - 5.3 A
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
IF = - 9A, -di/dt = -100A/μs
VR = - 50V, VGS = 0V
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 Outline
TO-252 Outline
Pins: 1 - Gate 2,4 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
TO-263 Outline
1. Gate
2. Drain
3. Source
4. Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.40 0.74 .016 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .280 .320
E 9.65 10.41 .380 .405
E1 6.22 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.13 0 .005
© 2013 IXYS CORPORATION, All Rights Reserved
IXTY18P10T IXTA18P10T
IXTP18P10T
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
-2.0-1.8-1.6-1.4-1.2-1.0-0.8-0.6-0.4-0.20.0
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 8V
- 5
V
- 6
V
- 7
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
-70
-60
-50
-40
-30
-20
-10
0
-30-25-20-15-10-50
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 5
V
- 6
V
- 7
V
- 8
V
- 9
V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 125ºC
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
-3.5-3.0-2.5-2.0-1.5-1.0-0.50.0
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 8V
- 7V
- 6V
- 5V
Fig. 4. R
DS(on)
Normalized to I
D
= - 9A Value vs.
Junction T emperature
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= -10V
I
D
= -18A
I
D
= - 9A
Fig. 5. R
DS(on)
Norm alized to I
D
= - 9A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-55-50-45-40-35-30-25-20-15-10-50
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= -10V
T
J
= 25ºC
T
J
= 125ºC
Fig. 6. Maximum Drain Current vs.
Case Temper atu r e
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY18P10T IXTA18P10T
IXTP18P10T
Fi g . 7. I n p u t Admi ttan ce
-24
-20
-16
-12
-8
-4
0
-6.5-6.0-5.5-5.0-4.5-4.0-3.5-3.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
2
4
6
8
10
12
14
16
18
20
-24-22-20-18-16-14-12-10-8-6-4-20
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-1.3-1.2-1.1-1.0-0.9-0.8-0.7-0.6-0.5-0.4-0.3
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar g e
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 5 10 15 20 25 30 35 40
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= - 50V
I
D
= - 9A
I
G
= -1mA
Fig. 11. Capacitance
10
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MH
z
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
-
-
-
-- -
-
100ms
-
© 2013 IXYS CORPORATION, All Rights Reserved
IXTY18P10T IXTA18P10T
IXTP18P10T
Fig . 14. R esisti ve Turn -o n Rise Time vs.
Drain Current
21
22
23
24
25
26
27
28
29
30
-18-17-16-15-14-13-12-11-10-9
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 10Ω , V
GS
= -10V
V
DS
= - 50V
T
J
= 25ºC
T
J
= 125ºC
Fi g . 15. R esi sti ve Tur n -o n Swi tch i n g Times vs.
Gate R esi stan ce
14
16
18
20
22
24
26
28
30
10 12 14 16 18 20 22 24 26 28 30
R
G
- Ohms
t
r
- Nanoseconds
0
10
20
30
40
50
60
70
80
t d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= - 50V
I
D
= -18A, - 9A
Fi g . 16. R esi sti ve Tur n -o ff Swi tch i ng Ti mes vs.
Junction Temperature
19
20
21
22
23
24
25
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
30
34
38
42
46
50
54
t d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10Ω, V
GS
= -10V
V
DS
= - 50V
I
D
= -18A, - 9A
Fi g . 17. R esi sti ve Tur n -o ff Swi tch i ng Ti mes vs.
Drain Current
30
33
36
39
42
45
48
51
54
-18-17-16-15-14-13-12-11-10-9
I
D
- Amperes
t
f
- Nanoseconds
19
20
21
22
23
24
25
26
27
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10Ω, V
GS
= -10V
V
DS
= - 50V
T
J
= 125ºC
T
J
= 25ºC
Fig . 13. R e si s ti ve Turn -on Ri se Ti me vs.
Junction T emp erature
20
21
22
23
24
25
26
27
28
29
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 10Ω , V
GS
= -10V
V
DS
= - 50V
I
D
= - 9A
I
D
= -18A
Fi g. 18. R e si stive Turn -o f f Swi tchi ng Time s vs.
Gate Resi stan ce
15
20
25
30
35
40
45
50
55
60
65
10 12 14 16 18 20 22 24 26 28 30 32 34
R
G
- Ohms
t
f
- Nanoseconds
10
20
30
40
50
60
70
80
90
100
110
t d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= - 50V
I
D
= - 9A, -18A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY18P10T IXTA18P10T
IXTP18P10T
IXYS REF: T_18P10T(A1)11-05-10-A
Fig . 19. Maximum Transi ent Th ermal I mp ed ance
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
