TPCA8104
2010-01-05
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)
TPCA8104
High-Side Switching Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 11 mΩ (typ.)
• High forward transfer admittance:|Yfs| = 50 S (typ.)
• Low leakage current: IDSS = -10 μA (max) (VDS = -60 V)
• Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS -60 V
Drain-gate voltage (RGS = 20 kΩ) VDGR -60 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID -40
Drain current
Pulse (Note 1) IDP -120
A
Drain power dissipation (Tc = 25°C) PD 45
Drain power dissipation (t = 10 s)
(Note 2a) PD 2.8
Drain power dissipation (t = 10 s)
(Note 2b) PD 1.6
W
Single-pulse avalanche energy
(Note 3) EAS 116 mJ
Avalanche current IAR -40 A
Repetitive avalanche energy
(Tc = 25°C) (Note 4) EAR 4.5 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: For Notes 1 to 4, see the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
0.5±0.1
6.0±0.3
1.27 0.4±0.1
5.0±0.2
0.595
0.05 M
A
14
5
8
0.15±0.05
0.8±0.1
1.1±0.2
4.25±0.2
0.6±0.1
3.5±0.2
14
58
5.0±0.2
0.95±0.05
S0.05 S
A
0.166±0.05
1, 2, 3: Source 4: Gate
5, 6, 7, 8: Drain
JEDEC ―
JEITA ―
TOSHIBA 2-5Q1A
Weight: 0.080 g (typ.)
Circuit Configuration
8 6
1 2 3
7 5
4
TPCA8104
2010-01-05
2
Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to case (Tc = 25°C) Rth (ch-c) 2.78 °C/W
Thermal resistance, channel to ambient
(t = 10 s) (Note 2a) Rth (ch-a) 44.6
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b) Rth (ch-a) 78.1
°C/W
Marking (Note 5)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = -24 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω, IAR = -40 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature.
Note 5:
(a)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
* Weekly code (three digits):
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(the last digit of the calendar year)
※
Type TPCA
8104
Lot No.
TPCA8104
2010-01-05
3
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA
Drain cutoff current IDSS VDS = −60 V, VGS = 0 V ⎯ ⎯ −10 μA
V (BR) DSS ID = −10 mA, VGS = 0 V −60 ⎯ ⎯
Drain-source breakdown
voltage V (BR) DSX ID = −10 mA, VGS = 20 V −35 ⎯ ⎯
V
Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 V
VGS = −4 V, ID = −20 A ⎯ 17 24
Drain-source ON-resistance RDS (ON)
VGS = −10 V, ID = −20 A ⎯ 11 16
mΩ
Forward transfer admittance |Yfs| VDS = −10 V, ID = −20 A 25 50 ⎯ S
Input capacitance Ciss ⎯ 4300 ⎯
Reverse transfer capacitance Crss ⎯ 450 ⎯
Output capacitance Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
⎯ 600 ⎯
pF
Rise time tr ⎯ 10 ⎯
Turn-on time ton ⎯ 20 ⎯
Fall time tf ⎯ 60 ⎯
Switching time
Turn-off time toff
Duty ≤ 1%, tw = 10 μs ⎯ 200 ⎯
ns
Total gate charge
(gate-source plus gate-drain) Qg ⎯ 90 ⎯
Gate-source charge 1 Qgs1 ⎯ 16 ⎯
Gate-drain (“Miller”) charge Qgd
VDD ≈ −48 V, VGS = −10 V
ID = −40 A
⎯ 28 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −120 A
Forward voltage (diode) VDSF IDR = −40 A, VGS = 0 V ⎯ ⎯ 1.2 V
RL = 1.5 Ω
VDD ≈ −30 V
0 V
VGS−10 V
4.7 Ω
ID = −20A
Output
TPCA8104
2010-01-05
4
Drain currrent ID (A)
RDS (ON) – ID
Drain−source ON-resistance
RDS (ON) (mΩ)
Gate−source voltage VGS (V)
ID – VGS
Drain current ID (A)
Drain−source voltage VDS (V)
Gate
−
source voltage VGS (V)
VDS – VGS
Drain−source voltage VDS (V)
ID – VDS
Drain current ID (A)
Drain
−
source voltage VDS (V)
ID – VDS
Drain current ID (A)
Drain current ID (A)
⎪Yfs⎪ – ID
Forward transfer admittance ⎪Yfs⎪ (S)
25
100
Tc = −55°C
1
−1 −10 −100
10
100
−50
−40
−20
−10
0
−30
Common source
Tc = 25°C
Pulse test
VGS = −2.6 V
−3.6
−3
−2.8
−3.8
−10
−6
0 −0.4 −0.8 −1.2 −1.6 −2.0
−100
−80
−40
−20
0
−60
0 −1 −2 −3 −4 −5
Tc = −55°C
25
100
Common source
VDS = −10 V
Pulse test
0 −1 −2−3
0
−
5
−4
−100
−80
−60
−20
ID = −40 A
−20
−10
0 −4 −8 −12 −16 −20
0
−0.8
−0.6
−0.4
−0.2
−1.0
Common source
VDS = −10 V
Pulse test
−0.1 −1 −10 −100
0.1
10
100 Common source
Tc = 25°C
Pulse test
V
GS
= −4 V
−10
−3.2
−3.4
−4
−8
−5
−10
−8
−6
−5−4
−3.8
−3.6
−
3.4
−3.2
−3
−2.8
VGS = −2.6 V
−40
1
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
TPCA8104
2010-01-05
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Drain−source voltage VDS (V)
C – VDS
Capacitance C (pF)
−0.1
10
100
10000
−1 −10 −100
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
Ciss
Coss
Crss
Case temperature Tc (°C)
RDS (ON) – Tc
Drain−source ON-resistance
RDS (ON) (m Ω)
Drain
−
source voltage VDS (V)
IDR – VDS
Drain reverse current IDR (A)
Gate threshold voltage Vth (V)
Case temperature Tc (°C)
Vth – Tc
0
−0.5
−1.5
−2.0
−2.5
−80 −40 0 40 80 120 160
Common source
VDS = −10 V
ID = −1mA
Pulse test
Drain power dissipation PD (W)
Ambient temperature Ta (°C)
PD – Ta
160 −40 0 40 80 120 −80
50
40
30
20
0
0
−0.1
Common source
Tc = 25°C
Pulse test
0.2
−1
−10
−100
−1000
0.8 1.0
−
3
−10
0.4 1.2
3.0
1.0
0
0 40 80 120
0.5
2.0
2.5
160
(1)
(2)
Gate−source voltage VGS (V)
Total gate charge Qg (nC)
Dynamic input/output
characteristics
Drain−source voltage VDS (V)
0 20 60
Common source
ID = −40 A
Tc = 25°C
Pulse test
VDD = −48 V
VDS
VGS
80 120
−50
−20
0
−30
−40
−30
−25
0
−24
−12
−10
−15
−60
10
Common source
Pulse test
VGS = −10V
VGS = −4 V −20
ID = −10 A, −20 A, −40 A
ID = −40 A
−10
0.6
−
5
−
1VGS = 0 V
1000
−1.0
1.5
40 100
−20
−5
−10
VDD = −48 V
−12
−24
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
t = 10s
TPCA8104
2010-01-05
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rth – tw
Pulse width tw (s)
Transient thermal impedance rth (℃/W)
0.1
0.001
1
100
1000
0.01 0.1 1 10 100 1000
(3)
(2)
(1)
Drain−source voltage VDS (V)
Safe operating area
−100
−0.1
−1000
−10 −1 −100
ID max (pulse) *
10 ms *
1 ms *
VDSS max
Drain current ID (A)
−1
−0.1
Single pulse
10
−10
ID max (continuous)
DC
operation
Drain power dissipation PD (W)
Case temperature Tc (°C)
PD – Tc
0
10
30
40
50
0 40 80 120 160
20
(1) Tc = 25°C
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
* Single pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
TPCA8104
2010-01-05
7
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
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noncompliance with applicable laws and regulations.
