AP4509GM - Advanced Power Electronics Corp. USA

Advanced Power N AND P-CHANNEL ENHANCEMENT

Electronics Corp. MODE POWER MOSFET

▼ Simple Drive Requirement N-CH BVDSS 30V

▼ Low On-resistance RDS(ON) 14mΩ

▼ Fast Switching Performance ID10A

P-CH BVDSS -30V

RDS(ON) 20mΩ

Description ID-8.4A

Absolute Maximum Ratings

Symbol Parameter Rating Units

N-channel P-channel

VDS Drain-Source Voltage 30 -30 V

VGS Gate-Source Voltage +20 +20 V

ID@TA=25℃Continuous Drain Current3 10 -8.4 A

ID@TA=70℃Continuous Drain Current3 7.9 -6.7 A

IDM Pulsed Drain Current1 30 -30 A

PD@TA=25℃Total Power Dissipation 2.0 W

Linear Derating Factor 0.016 W/℃

TSTG Storage Temperature Range -55 to 150 ℃

TJOperating Junction Temperature Range -55 to 150 ℃

Symbol Value Unit

Rthj-a Maximum Thermal Resistance Junction-ambient362.5 ℃/W

Data and specifications subject to change without notice

201204033

Parameter

Thermal Data

AP4509GM

RoHS-compliant Product

Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design,

low on-resistance and cost-effectiveness.

The SO-8 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

S1 G1 S2G2

D1 D1 D2 D2

SO-8

S1G1S2G2

D1 D1 D2 D2

SO-8

N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V

RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=9A - - 14 mΩ

VGS=4.5V, ID=5A - - 20 mΩ

VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V

gfs Forward Transconductance VDS=10V, ID=9A - 14 - S

IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA

Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V - - 100 uA

IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA

QgTotal Gate Charge2ID=9A - 23 65 nC

Qgs Gate-Source Charge VDS=24V - 6 - nC

Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 14 - nC

td(on) Turn-on Delay Time2VDS=15V - 14 - ns

trRise Time ID=1A - 10 - ns

td(off) Turn-off Delay Time RG=3.3Ω-36-ns

tfFall Time VGS=10V - 17 - ns

Ciss Input Capacitance VGS=0V - 1770 2830 pF

Coss Output Capacitance VDS=25V - 430 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 350 - pF

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage2IS=1.7A, VGS=0V - - 1.2 V

trr Reverse Recovery Time2IS=9A, VGS=0V - 31 - ns

Qrr Reverse Recovery Charge dI/dt=100A/µs - 25 - nC

AP4509GM

P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V

RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-8A - - 20 mΩ

VGS=-4.5V, ID=-4A - - 30 mΩ

VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V

gfs Forward Transconductance VDS=-10V, ID=-8A - 14 - S

IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -10 uA

Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V - - -100 uA

IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA

QgTotal Gate Charge2ID=-8A - 27 45 nC

Qgs Gate-Source Charge VDS=-24V - 4 - nC

Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 18 - nC

td(on) Turn-on Delay Time2VDS=-15V - 16 - ns

trRise Time ID=-1A - 11 - ns

td(off) Turn-off Delay Time RG=3.3Ω-40-ns

tfFall Time VGS=-10V - 25 - ns

Ciss Input Capacitance VGS=0V - 1580 2530 pF

Coss Output Capacitance VDS=-25V - 540 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 450 - pF

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage2IS=-1.7A, VGS=0V - - -1.2 V

trr Reverse Recovery Time2IS=-8A, VGS=0V - 40 - ns

Qrr Reverse Recovery Charge dI/dt=-100A/µs - 32 - nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

AP4509GM

N-Channel

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

100

120

140

160

01234

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TA=25oC 10V

7.0V

5.0V

4.5V

VG=3.0V

100

120

140

01234

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TA=150 oC 10V

7.0V

5.0V

4.5V

VG=3.0V

246810

VGS , Gate-to-Source Voltage (V)

RDS(ON) (m

)

ID=5A

TA=25 oC

0.6

0.8

1.0

1.2

1.4

1.6

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized RDS(ON)

D=9A

VG=10V

0 0.2 0.4 0.6 0.8 1 1.2

VSD , Source-to-Drain Voltage (V)

IS(A)

Tj=25 oCTj=150 oC

1.0

1.5

2.0

2.5

-50 0 50 100 150

Tj , Junction Temperature ( oC)

VGS(th) (V)

AP4509GM

N-Channel

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

td(on) trtd(off)tf

VDS

VGS

10%

90%

4.5V

QGS QGD

Charge

01020304050

QG , Total Gate Charge (nC)

VGS , Gate to So urce Voltage (V)

D=9A

VDS =24V

100

1000

10000

1 5 9 1317212529

VDS , Drain-to-Source Voltage (V)

C (pF)

=1.0MHz

Ciss

Coss

Crss

0.001

0.01

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

t , Pulse Width (s)

Normalized Thermal Response (Rthja)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja=135oC/W

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.01

0.1

100

0.1 1 10 100

VDS , Drain-to-Source Voltage (V)

ID (A)

TA=25 oC

Single Pulse

100us

1ms

10ms

100ms

AP4509GM

P-Channel

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

100

120

140

160

01234567

-VDS , Drain-to-Source Voltage (V)

-ID , Drain Current (A)

TA=25oC-10V

-7.0V

-5.0V

-4.5V

VG=-3.0V

100

120

0123456

-VDS , Drain-to-Source Voltage (V)

-ID , Drain Current (A)

TA=150 oC-10V

-7.0V

-5.0V

-4.5V

VG=-3.0V

246810

-VGS ,Gate-to-Source Voltage (V)

RDS(ON) (m

)

ID=-4A

TA=25oC

0.6

0.8

1.0

1.2

1.4

1.6

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized RDS(ON)

ID=-8 A

VG=-10V

1.5

2.5

-50 0 50 100 150

Tj , Junction Temperature ( oC)

-VGS(th) (V)

0 0.2 0.4 0.6 0.8 1 1.2

-VSD , Source-to-Drain Voltage (V)

-IS(A)

Tj=25oCTj=150 oC

AP4509GM

P-Channel

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

td(on) trtd(off) tf

VDS

VGS

10%

90%

-4.5V

QGS QGD

Charge

0 102030405060

QG , Total Gate Charge (nC)

-VGS , Gate to Source Voltage (V)

ID=-8 A

VDS =-24V

100

1000

10000

1 5 9 13 17 21 25 29

-VDS , Drain-to-Source Voltage (V)

C (pF)

=1.0MH

Ciss

Coss

Crss

0.001

0.01

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

t , Pulse Width (s)

Normalized Th e rmal Re sponse (Rthja)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja=135oC/W

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.01

0.1

100

0.1 1 10 100

-VDS , Drain-to-Source Voltage (V)

-ID (A)

100us

1ms

10ms

100ms

TA=25oC

Single Pulse