Shenzhen SI Semiconductors Co., LTD. Product Specification MJE13001L MJE LOW VOLTAGE SERIES TRANSISTORS FEATURES APPLICATION: HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING SUITABLE FOR 110V CIRCUIT MODE: WIDE SOA FLUORESCENT LAMP ELECTRONIC BALLAST Absolute Maximum Ratings Tc=25C TO-92 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 200 V Emitter- Base Voltage VEBO 9 V Collector Current IC 0.6 A Total Power Dissipation PC 7 W Junction Temperature Tj 150 C Storage Temperature Tstg -65-150 C Electronic Characteristics Tc=25C CHARACTERISTICS SYMBOL TEST CONDITION Collector-Base Cutoff Current ICBO VCB=400V 100 A Collector-Emitter Cutoff Current ICEO VCE=200V,IB=0 250 A Collector-Emitter Voltage VCEO IC=10mA,IB=0 200 V Emitter -Base Voltage VEBO IE=1mA,IC=0 9 V Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Si semiconductors Vces Vbes hFE 2004.10 MIN MAX IC=50mA,IB=10mA 0.5 IC=0.1A,IB=0.02A 1.0 IC=0.3A,IB=0.1A 2.0 IC=50mA,IB=10mA 1.0 VCE=5V,IC=1mA 8 VCE=20V,IC=20mA 10 VCE=5V,IC=200mA 8 UNIT V V 40 1 Shenzhen SI Semiconductors Co., LTD. Product Specification MJE13001L MJE LOW VOLTAGE SERIES TRANSISTORS Ic(A) 1 SOA (DC) Pc % Tj 120 100 80 IS/B 60 0.1 Ptot 40 20 0 0.01 1 100 10 100 Vce(V) 1000 0 hFE - Ic hFE 100 50 ) 200 Tj=25 Tj= - 40 Tj= - 40 10 Vce=1.5V Vce=5V 1 0.01 Ic(A) 0.1 Vces(v) Tj( Tj=125 Tj=25 100 150 hFE - Ic hFE Tj=125 10 100 1 1 0.001 Vces - Ic 1.6 Vbes(v) 1.4 hFE=5 0.01 0.1 Ic(A) 1 Vbes - Ic hFE=5 1.2 Tj=125 10 1 Tj= - 40 0.8 Tj=25 Tj= - 40 0.6 1 Tj=125 Tj=25 0.4 0.2 0.1 0.01 Si semiconductors Ic(A) 0.1 2004.10 1 0 0.01 0.1 Ic(A) 1 2 Shenzhen SI Semiconductors Co., LTD. Product Specification TO-92 MECHANICAL DATA UNIT SYMBOL min nom A 4.3 b 0.3 c 0.3 D D 4.3 5.2 d 1.0 1.7 E 3.2 4.2 2.54 e1 1.27 12.7 L1 Si semiconductors max 5.3 e L mm 2.0 2004.10 3