Shenzhen SI Semiconductors Co., LTD. Product Specification
Si semiconductors 2004.10 1
MJE LOW VOLTAGE SERIES TRANSISTORS MJE13001L
FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA
APPLICATION: SUITABLE FOR 110V CIRCUIT MODE: FLUORESCENT LAMP
ELECTRONIC BALLAST
Absolute Maximum Ratings Tc=25°C TO-92
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 400 V
Collector-Emitter Voltage VCEO 200 V
Emitter- Base Voltage VEBO 9 V
Collector Current IC 0.6 A
Total Power Dissipation PC 7 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65-150 °C
Electronic Characteristics Tc=25°C
CHARACTERISTICS SYMBOL TEST CONDITION MIN MAX UNIT
Collector-Base Cutoff Current ICBO V
CB=400V 100
A
Collector-Emitter Cutoff Current ICEO V
CE=200V,IB=0 250
A
Collector-Emitter Voltage VCEO I
C=10mA,IB=0 200 V
Emitter -Base Voltage VEBO I
E=1mA,IC=0 9 V
IC=50mA,IB=10mA 0.5
IC=0.1A,IB=0.02A 1.0
Collector-Emitter Saturation Voltage Vces
IC=0.3A,IB=0.1A 2.0
V
Base-Emitter Saturation Voltage Vbes IC=50mA,IB=10mA 1.0 V
VCE=5V,IC=1mA 8
VCE=20V,IC=20mA 10 40
DC Current Gain hFE
VCE=5V,IC=200mA 8
Shenzhen SI Semiconductors Co., LTD. Product Specification
Si semiconductors 2004.10 2
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.01 0.1 1
Ic(A)
Vbes(v)
0.01
0.1
1
1 10 100 1000
Vce(V)
Ic(A)
0.1
1
10
100
0.01 0.1 1
Ic(A)
Vces(v)
1
10
100
0.01 0.1 1
Ic(A)
hFE
1
10
100
0.001 0.01 0.1 1
Ic(A)
hFE
0
20
40
60
80
100
120
0 50 100 150 200
Tj( )
%
MJE LOW VOLTAGE SERIES TRANSISTORS MJE13001L
SOA (DC) Pc Tj
hFE - Ic h
FE - Ic
Vces - Ic Vbes - Ic
Vce=1.5V
T
j
=25
IS/B
Ptot
Vce=5V
hFE=5 hFE=5
Tj= − 40
T
j
=125 T
j
=125
Tj=25
Tj= − 40
T
j
=25
Tj= − 40
Tj=125
Tj=25
Tj= − 40
Tj=125
Shenzhen SI Semiconductors Co., LTD. Product Specification
Si semiconductors 2004.10 3
TO-92 MECHANICAL DATA
UNIT mm
SYMBOL min nom max
A 4.3 5.3
b 0.3
c 0.3
D
D
4.3 5.2
d 1.0 1.7
E 3.2 4.2
e 2.54
e1 1.27
L 12.7
L1 2.0
