VS-MBRS190-M3, VS-MBRS1100-M3
www.vishay.com Vishay Semiconductors
Revision: 26-Aug-14 1Document Number: 95744
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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High Performance Schottky Rectifier, 1.0 A
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-MBRS190-M3, VS-MBRS1100-M3 surface mount
Schottky rectifier has been designed for applications
requiring low forward drop and very small foot prints on PC
boards. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
PRODUCT SUMMARY
Package SMB
IF(AV) 1 A
VR90 V, 100 V
VF at IF0.78 V
IRM 1 mA at 125 °C
TJ max. 175 °C
Diode variation Single die
EAS 1.0 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 1.0 A
VRRM 90, 100 V
IFSM tp = 5 μs sine 870 A
VF1.0 Apk, TJ = 125 °C 0.63 V
TJRange -55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRS190-M3 VS-MBRS1100-M3 UNITS
Maximum DC reverse voltage VR90 100 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) 50 % duty cycle at TL = 147 °C, rectangular waveform 1.0
A
Maximum peak one cycle
non-repetitive surge current IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
870
10 ms sine or 6 ms rect. pulse 50
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.5 A, L = 8 mH 1.0 mJ
Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A