SIEMENS BCR 116 NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor (Ry=4.7kQ, Rg=47kQ) VPSO5161 Type Marking |Ordering Cede | Pin Configuration Package BCR 116 WGs _|Q62702-C2337._ |1=B j2=E 3=C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VoEo 50 Vv Callector-base voltage Vcpo 50 Emitter-base voltage Veso 5 Input on Voltage Vion) 15 DC collector current Io 100 mA Total power dissipation, Tg = 102C Prot 200 mw Junction temperature yj 150 C Storage temperature Tetg - 65 ...+ 150 Therma! Resistance Junction ambient =?) Rinda S$ 350 KAW Junction - soldering point Ainas < 240 1} Package mounted on peb 40mm x 40mm x 1.5mm / 6om? Cu Semiconductor Group 595 12.96SIEMENS BCR 116 Electrical Characteristics at T,=25C, unless otherwise specified Parameter Symbol Values Unit min. |typ. |max. DC Characteristics Collector-emitter breakdown voltage Vipryceo Vv Io = 100 PA, Ig = 0 50 - - Collector-base breakdown voltage Vierycao Io = 10 PA, Ig =0 50 - - Collector cutoff current icgo nA Vop = 40V, fe =0 - - 100 Emitter cutoff current leso pA Vep =5V, ig = 0 - - 155 DC current gain hee - Ilo =5 mA, Voge =5V 70 - - Collector-emitter saturation voltage 1) VoEsat Vv lg = 10 mA, fg =0.5 mA - - 0.3 Input off voltage Vicott) Ilo = 100 PA, Vop =5V 0.4 - 0.8 Input on Voltage Vion) lo=2 mA, Vop = 0.3 V 0.5 - 1.4 Input resistor Ry 3.2 47 6.2 kQ Resistor ratio Fiy/Ro 0.09 0.1 0.11 - AC Characteristics Transition frequency fr MHz lo = 10 mA, Voge = 5 V, f= 100 MHz - 160 - Collector-base capacitance Cob pF Vep = 10 V, f= 1 MHz - 3 - 1) Pulse test: t < 300s; D < 2% Semiconductor Group 596 12.96SIEMENS Ben 16 DC Current Gain hee = f (Ic) Collector-Emitter Saturation Voltage Vce = 5V (common emitter configuration) Voesat = Alc), Mee = 20 103 102 Pee 101 . 19 10 10 10 mA 0.0 0.2 0.4 0.6 Vv 1.0 ae fy > Veesat Input on Voltage Vion) = Alc) Input off voltage Vico), = Mic) Vor = 0.3V (common emitter configuration) Vee = 5V (common emitter configuration) 0.0 0.2 04 0.6 v 1.0 i Mon) Semiconductor Group 597SIEMENS BOR 116 Total power dissipation Pio, = f(Ta*; Ts) * Package mounted on epoxy mw TON Lt nn 0 0 20 40 60 8 100 120 C 150 w TT; Permissible Pulse Load Finis = (tp) Permissible Pulse Load Protmax / Protoc = Af) 103 A/S ve mull a Pow oo UI 101 Ltt iy 10 ao Ht MMT HH nt 10" Tene ac Semiconductor Group 598 12.96