BC847PN-7-F - Diodes - Pdf.Support

BC847PN

Document number: DS30278 Rev. 12 - 2 1 of 4

www.diodes.com November 2008

BC847PN

COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Die Construction

• Two Internally Isolated NPN/PNP Transistors in one package

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

• "Green" Device (Notes 3 and 4)

Mechanical Data

• Case: SOT-363

• Case Material: Molded Plastic, “Green” Molding Compound,

Note 4. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating) Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.006 grams (approximate)

Maximum Ratings, NPN Section @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage VCBO 50 V

Collector-Emitter Voltage VCEO 45 V

Emitter-Base Voltage VEBO 6.0 V

Collector Current IC 100 mA

Peak Collector Current ICM 200 mA

Peak Emitter Current IEM 200 mA

Maximum Ratings, PNP Section @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage VCBO -50 V

Collector-Emitter Voltage VCEO -45 V

Emitter-Base Voltage VEBO -5.0 V

Collector Current IC -100 mA

Peak Collector Current ICM -200 mA

Peak Emitter Current IEM -200 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 1) @ TA = 25°C Total Device PD 200 mW

Thermal Resistance, Junction to Ambient (Note 1) @ TA = 25°C R

JA 625 °C/W

Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants

Top View Device Schematic

BC847PN

Document number: DS30278 Rev. 12 - 2 2 of 4

www.diodes.com November 2008

BC847PN

Electrical Characteristics, NPN Section @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage (Note 5) V(BR

)

CBO 50 — — V IC = 10μA, IB = 0

Collector-Emitter Breakdown Voltage (Note 5) V(BR

)

CEO 45 — — V IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage (Note 5) V(BR

)

EBO 6 — — V IE = 1μA, IC = 0

DC Current Gain (Note 5) hFE 200 290 450 — VCE = 5.0V, IC = 2.0mA

Collector-Emitter Saturation Voltage (Note 5) VCE(SAT) — 90

200 250

600 mV IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Saturation Voltage (Note 5) VBE(SAT) — 700

900 — mV IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Voltage (Note 5) VBE(ON) 580

— 660

— 700

720 mV VCE = 5.0V, IC = 2.0mA

VCE =5.0V, IC = 10mA

Collector-Cutoff Current (Note 5) ICBO

ICBO —

— —

— 15

5.0 nA

µA VCB = 30V

VCB = 30V, TA = 150°C

Gain Bandwidth Product fT 100 300 — MHz VCE = 5.0V, IC = 10mA, f = 100MHz

Collector-Base Capacitance CCBO — 3.5 6.0 pF VCB = 10V, f = 1.0MHz

Noise Figure NF — 2.0 10 dB VCE = 5V, IC = 200µA, RG = 2.0kΩ,

f = 1.0kHz, Δf = 200Hz

Electrical Characteristics, PNP Section @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage (Note 5) V(BR

)

CBO -50 — — V IC = -10μA, IB = 0

Collector-Emitter Breakdown Voltage (Note 5) V(BR

)

CEO -45 — — V IC = -10mA, IB = 0

Emitter-Base Breakdown Voltage (Note 5) V(BR

)

EBO -5 — — V IE = -1μA, IC = 0

DC Current Gain (Note 5) hFE 220 290 475 — VCE = -5.0V, IC = -2.0mA

Collector-Emitter Saturation Voltage (Note 5) VCE(SAT) — -75

-250 -300

-650 mV IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Saturation Voltage (Note 5) VBE(SAT) — -700

-850 —

-950 mV IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Voltage (Note 5) VBE(ON) -600

— -650

— -750

-820 mV VCE = -5.0V, IC = -2.0mA

VCE = -5.0V, IC = -10mA

Collector-Cutoff Current (Note 5) ICBO

ICBO —

— —

— -15

-4.0 nA

µA VCB = -30V

VCB = -30V, TA = 150°C

Gain Bandwidth Product fT 100 200 — MHz VCE = -5.0V, IC = -10mA, f = 100MHz

Collector-Base Capacitance CCBO — 3 4.5 pF VCB = -10V, f = 1.0MHz

Noise Figure NF — — 10 dB VCE = -5V, IC = -200µA, RG = 2.0kΩ,

f = 1.0kHz, Δf = 200Hz

Notes: 5. Short duration pulse test used to minimize self-heating effect.

100

150

200

250

0 40 80 120 160 200

DISSI

(mW )

T , AMBIENT TEMPERA TURE ( C)

Fig. 1 Power Dissipation vs. Ambient Temperature

(Total D evice, Note 1)

R°C/W

= 625

100

1,000

1.0 10 1000.10.01

h D

FE,

I , COLLECTOR CURRENT (mA)

Fig. 2 T y pical DC Current Gain vs. Collector Current (NPN)

BC847PN

Document number: DS30278 Rev. 12 - 2 3 of 4

www.diodes.com November 2008

BC847PN

0.1

0.2

0.3

0.4

0.5

0.1 1.0 10 100

LLE

-EMI

SATURATIO N VOLTAGE (V)

I , COLLECTOR CURRENT (mA)

Fig. 3 Typical Collector-Emitter Saturation Voltage

vs. Collector Current (NPN)

100

1,000

0.1 1.0 10 100

AIN-BANDWID

I , COLLECTOR CURRENT (mA)

Fig. 4 Typical Gain-Bandwidth Product

vs. Col lecto r Cu r rent ( N PN )

T = 25C

V = 10V

V = 5V

V = 2V

100

1,000

110 100 1,000

V = 5V

h, D

AIN

-I , COLLECTOR CURRENT (mA)

Fig. 5 T ypical DC Current Gain vs. Collector Current (PNP)

T = 25°C

T = -50°C

T = 150°C

0.1 10 100 1,000

-V ,

LLE

-EMI

SATURATION VOLT AGE (V)

CE(SAT)

-I , COLLECTOR CURRENT (mA)

Fig. 6 Typical Collector-Emitter Saturation Voltage

vs. Collector Current (PNP)

T = 25°C

T = -50°C

T = 150°C

0.1

0.2

0.3

0.4

0.5

= 10

100

1,000

110 100

AIN-BANDWID

-I , COLLECTOR CURRENT (mA)

Fig. 7 Typical Gain-Bandwidth Product

vs. Collector Current (PNP)

V = 5V

BC847PN

Document number: DS30278 Rev. 12 - 2 4 of 4

www.diodes.com November 2008

BC847PN

Ordering Information (Note 6)

Part Number Case Packaging

BC847PN-7-F SOT-363 3000/Tape & Reel

Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Date Code Key

Year 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015

Code M N P R S T U V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Package Outline Dimensions

Suggested Pad Layout

IMPORTANT NOTICE

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product

described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall

assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,

harmless against all damages. LIFE SUPPORT

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written

approval of the President of Diodes Incorporated.

SOT-363

Dim Min Max

A 0.10 0.30

B 1.15 1.35

C 2.00 2.20

D 0.65 Typ

F 0.40 0.45

H 1.80 2.20

J 0 0.10

K 0.90 1.00

L 0.25 0.40

M 0.10 0.22

α 0° 8°

All Dimensions in mm

Dimensions Value (in mm)

Z 2.5

G 1.3

X 0.42

Y 0.6

C1 1.9

C2 0.65

K7P = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: T = 2006)

M = Month (ex: 9 = September)

K7P

B C