European PowerSemiconductor and Electronics Company Marketing Information FD 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 (K) C1 E2 (A) E1 G1 C1 VWK Apr. 1997 IGBT-Module FD 600 R 16 KF4 Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung total power dissipation gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Isolations-Prufspannung insulation test voltage tp=1 ms tC=25C, Transistor /transistor tp=1ms RMS, f=50 Hz, t= 1 min. VCES 1600 V ICRM 1200 A IC Ptot VGE 3900 W 20 V IFRM 1200 A IF Gate-Schwellenspannung 600 A VISOL Charakteristische Werte / Characteristic values: Transistor Kollektor-Emitter Sattigungsspannung 600 A 3,4 kV min. collector-emitter saturation voltage iC=600A, vGE=15V, t vj=25C vCE sat iC=40mA, vCE=vGE, tvj=25C fO=1MHz,tvj=25C,vCE=25V, v GE=0V vGE(TO) iC=600A, vGE=15V, t vj=125C gate threshold voltage max. - 3,5 - 4,6 3,9 V 5 V 4,5 5,5 6,5 V Eingangskapazitat input capacity - 90 - nF Kollektor-Emitter Reststrom collector-emitter cut-off current vCE=1600V, v GE=0V, t vj=25C vCE=1600V, v GE=0V, t vj=125C iCES - 4 40 - mA - mA Gate-Emitter Reststrom gate leakage current iGES - 400 nA gate leakage current vCE=0V, v GE=20V, t vj=25C - Emitter-Gate Reststrom - - 400 nA Einschaltzeit (induktive Last) turn-on time (inductive load) iC=600A,vCE=900V,v L=15V ton - 0,8 - s - 1 - s vCE=0V, v EG=20V, t vj=25C vL=15V, R G=3,3, tvj=25C Speicherzeit (induktive Last) Fallzeit (induktive Last) vL=15V, R G=3,3, tvj=125C storage time (inductive load) iEGS iC=600A,vCE=900V,v L=15V vL=15V, R G=3,3, tvj=25C ts iC=600A,vCE=900V,v L=15V tf vL=15V, R G=3,3, tvj=125C fall time (inductive load) Cies typ. vL=15V, R G=3,3, tvj=25C vL=15V, R G=3,3, tvj=125C - 1,1 - s - 1,3 - s - 0,25 - s - 0,3 - s - 240 - mWs - 140 - mWs Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverlustenergie pro Puls Abschaltverlustenergie pro Puls turn-on energy loss per pulse iC=600A,vCE=900V,v L=15V Eon iC=600A,vCE=900V,v L=15V RG=3,3, tvj=125C, LS=70nH Eoff iF=600A, vGE=0V, t vj=25C vF peak reverse recovery current iF=600A, -diF/dt=3kA/s IRM recovered charge vRM=900V, v EG=10V, t vj=125C iF=600A, -diF/dt=3kA/s RG=3,3, tvj=125C, LS=70nH turn-off energy loss per pulse Inversdiode / Inverse diode Durchlaspannung Ruckstromspitze forward voltage iF=600A, vGE=0V, t vj=125C vRM=900V, v EG=10V, t vj=25C Sperrverzogerungsladung vRM=900V, v EG=10V, t vj=25C Qr vRM=900V, v EG=10V, t vj=125C 1) Hochstzulassiger diF/dt-Wert / Maximum rated diF/dt-value - 2,4 2,8 V - 2,2 - V - 230 - A - 320 - A - 50 - As - 110 - As Thermische Eigenschaften / Thermal properties Innerer Warmewiderstand thermal resistance, junction to case Transistor, DC, pro Zweig / per arm Diode /diode, DC, pro Modul / per module RthJC Diode /diode, DC, pro Zweig / per arm Ubergangs-Warmewiderstand thermal resistance, case to heatsink pro Module / per Module pro Zweig / per arm Hochstzul. Sperrschichttemperatur Betriebstemperatur max. junction temperature operating temperature Lagertemperatur storage temperature RthCK tstg Innere Isolation internal insulation Anzugsdrehmoment f. mech. Befestigung / mounting torque Anzugsdrehmoment f. elektr. Anschlusse / terminal connection torque terminals M6 M1 terminals M4 M2 terminals M8 Gewicht weight G Bedingung fur den Kurzschluschutz / Conditions for short-circuit protection tfg = 10 s VCC = 1000 V vL = 15V RGF = RGR = 3,3 vCEM = 1300 V iCMK1 6000 A tvj = 125C iCMK2 4500 A Unabhangig davon gilt bei abweichenden Bedingungen / with regard to other conditions v CEM = VCES - 20nH x |dic/dt| 0,008 C/W 0,016 C/W 150 C -40...+125 C -40...+125 C Al2O3 3 Nm 2 Nm 8...10 Nm Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 0,04 C/W 0,08 C/W tvj max tc op Mechanische Eigenschaften / Mechanical properties 0,032 C/W ca. 1500 g FD 600 R 16 KF4 1000 1200 iC [A] iC [A] 1000 800 VGE = 20 V 15 V 800 600 12 V 600 10 V 400 9V 400 8V 200 200 0 1 2 3 4 5 0 1 vCE [V] FD 600 R 16 KF4 / 1 Bild / Fig. 1 Kollektor-Emitter-Spannung im Sattigungsbereich (typisch) / Collector-emitter-voltage in saturation region (typical) VGE = 15 V t vj = 25C t vj = 125C 1200 3 4 5 vCE [V] Bild / Fig. 2 Kollektor-Emitter-Spannung im Sattigungsbereich (typisch) / Collector-emitter-voltage in saturation region (typical) tvj = 125C 1400 tvj = 125 C 25 C iC [A] 2 FD 600 R 16 KF4 / 2 iC1200 [A] 1000 1000 800 800 600 600 400 400 200 200 0 5 6 7 8 FD 600 R 16 KF4 / 3 Bild / Fig. 3 Ubertragungscharakteristik (typisch) / Transfer characteristic (typical) VCE = 20 V 9 10 11 vGE [V] 12 0 0 500 1000 FD 600 R 16 KF4 / 4 Bild / Fig. 4 Ruckwarts-Arbeitsbereich / Reverse biased safe operating area tvj = 125 C vLF = vLR = 15 V RG = 3,3 1500 vCE [V] 2000 FD 600 R 16 KF4 -1 10 Diode 7 1200 iF [A] Z(th)JC [C/W] 1000 IGBT 3 800 2 -2 10 600 7 5 400 4 3 200 2 -3 10 10-3 2 3 4 5 7 10-2 2 3 4 5 7 10 -1 2 FD 600 R 16 KF4 / 5 Bild / Fig. 5 Transienter innerer Warmewiderstand (DC) / Transient thermal impedance (DC) 3 4 5 7 100 2 t [s] 3 4 5 7 101 0 0 0,5 1 1,5 2 FD 600 R 16 KF4 / 6 Bild / Fig. 6 Durchlakennlinie der Inversdiode (typisch) / Forward characteristic of the inverse diode (typical) tvj = 25C tvj = 125C 2,5 3 vF [V] 3,5 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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