Features
•Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS
Compliant. See ordering information)
•Capable of 1.0Watts of Power Dissipation.
•Collector-current 3.0A
•Collector-base Voltage 60V
•Operating and storage junction temperature range:-55oC to +150oC
2SD1899-L
NPN Silicon
Epitaxial Transistor
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(I
C=1.0mAdc, IB=0)
60 Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=100µAdc, IE=0)
60 Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(I E=100µAdc,IC=0)
7Vdc
ICBO Collector Cutoff Current
(VCB=60Vdc, I E=0Adc) 10 µAdc
IEBO Emitter Cutoff Current
(VEB=7.0Vdc, I C=0Adc) 10 µAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain*
(I
C=600mAdc, VCE=2.0Vdc) 100 400
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=1500mAdc, IB=150mAdc) 0.25 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(I
C=1500mAdc, IB=150mAdc) 1.2 Vdc
fTTransistor Frequency
(IC=1500mAdc, VCE=5Vdc) 120(Typ) MHz
CLASSIFICATION OF HFE (1)
Rank M L K
Range 100-200160-320200-400
x Epoxy meets UL 94 V-0 flammability rating
2SD1899-K
2SD1899-M
•Moisure Sensitivity Level 1
(VCB=10Vdc, I E=0,f=1MHz)
COB Collector Output Capacitance 30(typ) pF
Halogen free available upon request by adding suffix "-HF"
•
DIMENSIONS
MM
DIM MIN MAX MIN MAX NOTE
A 0.087 0.094 2.20 2.40
B 0.000 0.005 0.00 0.13
C 0.026 0.034 0.66 0.86
D 0.018 0.023 0.46 0.58
E 0.256 0.264 6.50 6.70
F 0.201 0.215 5.10 5.46
G 0.190 4.83
H 0.236 0.244 6.00 6.20
J 0.386 0.409 9.80 10.40
PIN 1. BASE
PIN 2.4 COLLECTOR
PIN 3. EMITTER
INCHES
O 0.043 0.051 1.10 1.30
A
D
B
L
G
V
C
I
J
H
F
1
2
3
I 0.086 0.094 2.18 2.39
K 0.114 2.90
M 0.063 1.60
L 0.055 0.067 1.40 1.70
Q 0.000 0.012 0.00 0.30
V 0.211 5.35
SMALL-SIGNAL CHARACTERISTICS
Micro Commercial Components
M C C
TM
Micro Commercial Components
20736 Marilla Street Chatsworth
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4933
Revision: A 2015/03/24
www.mccsemi.com
1 of 3