TYPES TIPS13, TIP514 P-N-P SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 150 V Min ViBR)CEO 5-A Rated Continuous Collector Current 30 Watts at 100C Case Temperature (TIP513) e 20 Watts at 100C Case Temperature (TIP514)} @ Min fz of 40 MHz at5V,0.5A mechanical data TIP513 ALL TERMINALS ARE INSULATED FROM THE CASE rearno rane = Temas toseunr.26 amore HEB ee 2388 ora ae soe B88 Salt oe ae FenmNaL 9 ue tas 974g __ ALL JEDEC TO-59 DIMENSIONS AND NOTES ARE APPLICABLE NOTES: A. Within this dimension, case diameter may vary. . Position of terminals with respect to hexagon is not controlied, a 0.125 inch of the stud. DB, Alt dimensions are tn inches unless otherwise specified. C. The ase temperature may be measured anywhere on the seating plane within TIP514 THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE ovsamax SEATINGPLANE BOTH ENDS. oO 5 rt ( Max DIA DIA 0.3608 Max * iy 2234 bia 2 Leaps 0.162 9.076 x Brags smauae si 1066 RE e210 2WOLES 508 ALL DIMENSIONS ARE IN INCHES ALL JEDEC T0-66 DIMENSIONS AND NOTES ARE APPLICABLE 9.038 absolute maximum ratings at 25C case temperature (unless otherwise noted) Collector-Base Voltage . soe ee ee Collector-Emitter Voltage (See Note ) rs Emitter-Base Voltage 2... 1... ee ee ee Continuous Collector Current 2. 6 2 6. ek a Peak Collector Current (See Note 2) Continuous Base Current woe o. TIP513 - TIP514 + 150 Ve a -150 V e- -5V a -5Ae a-75A> om 2A oe Safe Operating Area at (or below) 100 c Case Temperature . See Figure 1 * Continuous Device Dissipation at (or below) 100C Case Temperature (See Note 3) tae 30 W 20 W Continuous Device Dissipation at (or below) 25C Free-Air Temperature (See Note 4) . . . . 2W 2W Operating Collector Junction Temperature Range Se ee 65C to 200C Storage Temperature Range 65C to 200C Lead or Terminal Temperature 1/16 Inch from Case for 10 Seconds NOTES: This value applies when the base-emitter diode is open-circuited. . This value applies for ty, 0.3 ms, duty cycle < 10%. Puna . Derste linearly to 200C free-air temperature at the rate of 11.4 mw/c. 300C e . Oerate linearly to 200C case temperature at the rate of 0.3 W/C for TIP513 and.0.2 W/C for TIPS 14, TEXAS INSTRUMENTS 2-243TYPES TIP513, TIP514 P-N-P SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN MAX | UNIT ViBR)CEQ Collector-Emitter Breakdown Voltage Io=-30mA, Ip = 0, See Note 5 150 Vv IcEO Collector Cutoff Current Vce=75V, Ip=0 300 uA VcE = 150V, Vee =90 1 Ices Collector Cutoff Current cE BE > mA Vce=75V, Vee =9, Tc = 150C 2 Veg=2.5V, Ic=0 100 A 'EBO Emitter Cutoff Current E8 c s Vep=5V, Iq=0 -1 mA Vce=-4V, Io =2.5A, See Notes 5 and 6 30 150 bre Static Forward Current Transfer Ratio cE c Voce =-4V, Ic=5A, See Notes 5 and6 15 VBE Base-Emitter Voltage Voce =-4V, Ic =5A, See Notes 5 and6 2.2 v Ip=-0.25A, I=-2.5A, See Notes 5 and6 -1 Vv Collector-Emitter Saturation Volt v CElsat) 7 age ip=-05A, I=5A, See Notes 5 and6 2 Small-Signal Common-E mitter h VceE=-5Y, Ic =-O5A, f= 1kH 30 fe Forward Current Transfer Ratio CE 08 1 kHe Small-Signal Common-Emitter lh Voce =-5V, Ic =-O.5A, f=5MH 8 tel Forward Current Transfer Ratio ce c SMH2 NOTES: 5. These parameters must be measured using pulse techniques. ty, = 300 us, duty cycle = 2%. inch from the device body. thermal characteristics . These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts and located within 0.125 PARAMETER TipS73 | THP514 UNIT MAX MAX ReJjc Junction-to-Case Thermat Resistance 3.33 5 CCrw Resa Junction-to-Free-Air Thermal Resistance 87.5 87.5 MAXIMUM SAFE OPERATING AREA MAXIMUM COLLECTOR CURRENT vs COLLECTOR-EMITTER VOLTAGE 10 : ~7 Tce < 100C < 4 D-C Operation TIP513 S 2 6-1 5 -07 TIP514 3-04 9 o 0.2 5 E 0.1 x --0.07 = 0.04 2 0.02 -0.01 1 -4 -10 40 100 1000 VceECollector-Emitter VoltageV FIGURE 1 2-244 TEXAS INSTRUMENTS TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.