NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N08M1618L1A 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit Overview Features The N08M1618L1A is an integrated memory device intended for non life-support (Class 1 or 2) medical applications. This device is a 8 megabit memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp's advanced CMOS technology with reliability inhancements for medical users. The base design is the same as NanoAmp's N08M1618L1A, which has further reliability processing for life-support (Class 3) medical applications. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. This device is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in a JEDEC standard BGA package. * Dual voltage for Optimum Performance: Vccq - 2.3 to 3.6 Volts Vcc - 1.4 to 2.2 Volts * Very low standby current 0.4A at 1.8V and 37 deg C * Very low operating current 1.0mA at 1.8V and 1s (Typical) * Very low Page Mode operating current 0.5mA at 1.8V and 1s (Typical) * Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion * Low voltage data retention Vcc = 1.2V * Special Processing to reduce Soft Error Rate (SER) * Automatic power down to standby mode Product Family Part Number Package Type N08M1618L1AB 48 - BGA Operating Temperature Power Supply Speed 1.4V-3.6V(VCCQ) 85ns @ 1.7V -40oC to +85oC 1.4V-2.2V(V ) 150ns @ 1.4V CC Standby Operating Current (ISB), Current (Icc), Max Max 20 A 3 mA @ 1MHz N08M1618L1AD Known Good Die Pin Configuration Pin Descriptions 1 2 3 4 5 6 A LB OE A0 A1 A2 CE2 B I/O8 UB A3 A4 CE1 I/O0 C I/O9 I/O10 A5 A6 I/O1 I/O2 VSS D I/O11 A17 A7 I/O3 VCC E VCCQ I/O12 NC A16 I/O4 VSS F I/O14 I/O13 A14 A15 I/O5 I/O6 G I/O15 NC A12 A13 WE I/O7 H A18 A8 A9 A10 A11 NC 48 Pin BGA (top) 8 x 10 mm Pin Name Pin Function A0-A18 Address Inputs WE CE1, CE2 OE LB UB I/O0-I/O15 Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs VCC Power VSS Ground VCCQ Power I/O pins only NC Not Connected Stock No. 23211-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 1 N08M1618L1A NanoAmp Solutions, Inc. Functional Block Diagram Address Inputs A0 - A18 Address Decode Logic 512K x 16 Input/ Output Mux and Buffers Memory Array I/O0 - I/O7 I/O8 - I/O15 CE1 WE OE UB LB Control Logic Functional Description CE1 CE2 WE OE I/O0 - I/O7 MODE POWER H X X X High Z Standby1 Standby Standby X L X X High Z Standby1 Data In Write2 Active L H L X2 L H H L Data Out Read Active L H H H High Z Active Active 1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Capacitance1 Item Symbol Test Condition Input Capacitance CIN I/O Capacitance CI/O Min Max Unit VIN = 0V, f = 1 MHz, TA = 25oC 8 pF VIN = 0V, f = 1 MHz, TA = 25oC 8 pF 1. These parameters are verified in device characterization and are not 100% tested Stock No. 23211-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 2 N08M1618L1A NanoAmp Solutions, Inc. Absolute Maximum Ratings1 Item Symbol Rating Unit Voltage on any pin relative to VSS VIN,OUT -0.3 to VCC+0.3 V Voltage on VCC Supply Relative to VSS VCC -0.3 to 4.5 V Power Dissipation PD 500 mW Storage Temperature TSTG -40 to 125 o Operating Temperature TA -40 to +85 oC Soldering Temperature and Time TSOLDER 10sec(Lead only) oC 240oC, C 1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Operating Characteristics (Over Specified Temperature Range) Min. Typ1 Max Unit 1.4 1.8 2.3 V VCCQ > or = VCC 1.4 1.8 3.6 V Chip Disabled3 1.2 Item Symbol Core Supply Voltage VCC I/O Supply Voltage VCCQ Data Retention Voltage VDR Input High Voltage VIH VCCQ-0.6 VCCQ+0.3 V Input Low Voltage VIL -0.3 0.6 V Output High Voltage VOH IOH = 0.2mA Output Low Voltage VOL IOL = -0.2mA 0.2 V Input Leakage Current ILI VIN = 0 to VCC 0.1 A Output Leakage Current ILO OE = VIH or Chip Disabled 0.1 A Read/Write Operating Supply Current @ 1 s Cycle Time2 ICC1 VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 1.5 2.5 mA Read/Write Operating Supply Current @ 85 ns Cycle Time2 ICC2 VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 10.0 13.0 mA Page Mode Operating Supply Current @ 85 ns Cycle Time2 (Refer to Power Savings with Page Mode Operation diagram) ICC3 VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 3.5 mA Read/Write Quiescent Operating Supply Current3 ICC4 VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0, f=0 0.2 A ISB1 VIN = VCC or 0V Chip Disabled tA= 85oC, VCC = 2.3 V 0.2 20.0 A 0.1 1.0 A Standby Current3 Data Retention Current3 IDR Test Conditions VCC = 1.8V, VIN = VCC or 0 Chip Disabled, tA= 85oC V VCCQ-0.2 V 1. Typical values are measured at Vcc=Vcc Typ., TA=25C and not 100% tested. 2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system. 3. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all inputs must be within 0.2 volts of either VCC or VSS. Stock No. 23211-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 3 N08M1618L1A NanoAmp Solutions, Inc. Power Savings with Page Mode Operation (WE = VIH) Page Address (A4 - A17) Word Address (A0 - A3) Open page Word 1 Word 2 ... Word 16 CE1 CE2 OE Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power saving feature. The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant bits and addressing the 16 words within the open page, power is reduced to the page mode value which is considerably lower than standard operating currents for low power SRAMs. Stock No. 23211-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 4 N08M1618L1A NanoAmp Solutions, Inc. Timing Test Conditions Item Input Pulse Level 0.1VCC to 0.9 VCC Input Rise and Fall Time 5ns Input and Output Timing Reference Levels 0.5 VCC Output Load CL = 30pF Operating Temperature -40 to +85 oC Timing VCCQ > or = VCC Item Symbol Read Cycle Time tRC VCC = 1.4 - 2.3 V Min. Max. 150 VCC = 1.7 - 2.3 V Min. Max. Units 85 ns Address Access Time tAA 150 85 ns Chip Enable to Valid Output tCO 150 85 ns Output Enable to Valid Output tOE 50 40 ns Chip Enable to Low-Z output tLZ 20 10 ns Output Enable to Low-Z Output tOLZ 20 5 ns Chip Disable to High-Z Output tHZ 0 30 0 15 ns Output Disable to High-Z Output tOHZ 0 30 0 15 ns Output Hold from Address Change tOH 20 10 ns Write Cycle Time tWC 150 85 ns Chip Enable to End of Write tCW 75 50 ns Address Valid to End of Write tAW 75 50 ns Write Pulse Width tWP 50 40 ns Address Setup Time tAS 0 0 ns Write Recovery Time tWR 0 0 ns Write to High-Z Output tWHZ Data to Write Time Overlap tDW 50 40 ns Data Hold from Write Time tDH 0 0 ns End Write to Low-Z Output tOW 10 5 ns 30 15 Stock No. 23211-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. ns 5 N08M1618L1A NanoAmp Solutions, Inc. Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH) tRC Address tAA tOH Data Out Previous Data Valid Data Valid Timing Waveform of Read Cycle (WE=VIH) tRC Address tAA tHZ(1,2) CE1# tCO CE2 tLZ(2) tOHZ(1) tOE OE# tOLZ tLB, tUB LB#, UB# tLBLZ, tUBLZ Data Out High-Z tLBHZ, tUBHZ Data Valid Stock No. 23211-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 6 N08M1618L1A NanoAmp Solutions, Inc. Timing Waveform of Write Cycle (WE control) tWC Address tWR tAW CE1# tCW CE2 tLBW, tUBW LB#, UB# tAS tWP WE# tDW High-Z tDH Data Valid Data In tWHZ tOW High-Z Data Out Timing Waveform of Write Cycle (CE1 Control) tWC Address tAW CE1# (for CE2 Control, use inverted signal) tWR tCW tAS tLBW, tUBW LB#, UB# tWP WE# tDW Data Valid Data In tLZ Data Out tDH tWHZ High-Z Stock No. 23211-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 7 N08M1618L1A NanoAmp Solutions, Inc. Ball Grid Array Package BOTTOM VIEW 6 mm 0.75 mm 8 mm 0.75 mm Ordering Information N08M1618L1AX-XX X Temperature Performance Package Type I = Industrial, -40C to 85C 85 = 85ns @ 1.7V B = 48-ball BGA D = Known Good Die Revision History Revision # Date Change Description 01 11/01/02 Initial Release (c) 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration purposes only and they vary depending upon specific applications. NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments. Stock No. 23211-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 8