GWM 160-0055X1 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol Conditions VDSS TJ = 25C to 150C Maximum Ratings VGS 55 V 20 V ID25 ID90 TC = 25C TC = 90C 150 115 A A IF25 IF90 TC = 25C (diode) TC = 90C (diode) 120 75 A A Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. RDSon 1) on chip level at VGS = 10 V; ID = 100 A TJ = 25C TJ = 125C VGS(th) VDS = 20 V; ID = 1 mA IDSS VDS = VDSS; VGS = 0 V IGSS VGS = 20 V; VDS = 0 V Qg Qgs Qgd VGS = 10 V; VDS = 12 V; ID = 160 A td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH 1) typ. max. 2.7 4.5 3.3 2.5 TJ = 25C TJ = 125C inductive load VGS = 10 V; VDS = 24 V ID = 100 A; RG = 39 ; TJ = 125C mW mW 4.5 V 1 A mA 0.2 A 0.1 105 tbd tbd nC nC nC 140 125 550 120 ns ns ns ns 0.17 0.60 0.004 mJ mJ mJ with heat transfer paste (IXYS test setup) 1.3 1.0 1.6 AC drives * in automobiles - electric power steering - starter generator * in industrial vehicles - propulsion drives - fork lift drives * in battery supplied equipment Features * MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode * package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer * Space and weight savings Package options * 2 lead forms available - straight leads (SL) - SMD lead version (SMD) K/W K/W VDS = ID*(RDS(on) + 2RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110307i 1-6 GWM 160-0055X1 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. VSD (diode) IF = 100 A; VGS = 0 V trr QRM IRM IF = 100 A; -diF/dt = 800 A/s; VR = 24 V typ. max. 1.0 1.3 40 0.42 20 V ns C A Component Symbol Conditions Maximum Ratings IRMS per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections TJ Tstg VISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute FC mounting force with clip Symbol Conditions Rpin to chip 1) coupling capacity between shorted pins and mounting tab in the case Weight 1) A -55...+175 -55...+125 C C 1000 V~ 50 - 250 N Characteristic Values min. CP 300 typ. max. 0.6 mW 160 pF 25 g VDS = ID*(RDS(on) + 2RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110307i 2-6 GWM 160-0055X1 Straight Leads GWM 160-0055X1-SL 37,5 +0,20 5 0,05 (11x) 3 0,05 1,5 1 0,05 0,5 0,02 1 0,05 S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1 L2 L1 L- 25 +0,20 53 0,15 L3 L+ 2,1 4,5 12 0,05 4 0,05 (3x) 6 0,05 Surface Mount Device GWM 160-0055X1-SMD 37,5 +0,20 1,5 (11x) 3 0,05 5 0,05 1 0,05 0,5 0,02 R1 0,2 S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1 L2 L1 L- L+ 2,1 1 0,05 12 0,05 4,5 25 +0,20 39 0,15 L3 5 0,10 4 0,05 5 2 (3x) 6 0,05 Leads Ordering Straight Standard SMD Standard Part Name & Packing Unit Marking Part Marking Delivering Mode Base Qty. Ordering Code GWM 160-0055X1 - SL GWM 160-0055X1 Blister 28 505 230 GWM 160-0055X1 - SMD GWM 160-0055X1 Blister 28 504 862 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110307i 3-6 GWM 160-0055X1 350 1.2 VDS = 24 V 300 1.1 250 1.0 ID - [A] VDSS [V] normalized IDSS = 0.25 mA 0.9 200 150 100 0.8 TJ = 125C 50 0 0.7 -25 0 25 50 75 100 125 150 TJ = 25C 3 4 5 TJ [C] Fig. 1 Drain source breakdown voltage VDSS vs. junction temperature TJ 350 300 10 V TJ = 25C 7V 6V 150 5.5 V 100 7V 6.5 V 200 6V 150 5V 5.5 V 5V 50 0 1 2 3 VDS [V] 4 5 0 6 Fig. 3 Typical output characteristic VGS = 10 V ID = 160 A 2.0 7.5 3.0 6.0 2.5 4.5 RDS(on) RDS(on) normalized 1.0 3.0 0.5 RDS(on) [m] 1.5 1.5 0.0 -25 0 25 50 75 100 125 0.0 150 TJ [C] Fig. 5 Drain source on-state resistance RDS(on) versus junction temperature TJ IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 0 1 2 3 VDS [V] 4 5 6 Fig. 4 Typical output characteristic RDS(ON) - normalized 2.5 RDS(on) normalized TJ = 125C 10 V 100 50 0 8 250 ID [A] ID [A] 200 VGS = 20 V 15 V 300 6.5 V 250 7 Fig. 2 Typical transfer characteristic 350 VGS= 20 V 15 V 6 VGS [V] 5V 5.5 V 6V 6.5 V 7V 2.0 TJ = 125C 1.5 VGS = 10 V 1.0 0.5 15 V 20 V 0 50 100 150 200 250 300 350 ID [A] Fig. 6 Drain source on-state resistance RDS(on) versus ID 20110307i 4-6 GWM 160-0055X1 12 200 VDS = 12 V ID = 160 A TJ = 25C 10 160 140 8 VDS = 40 V 6 ID - [A] VGS [V] TJ = 175C 180 4 120 100 80 60 40 2 20 20 40 60 80 100 120 140 0 160 0 25 50 75 Fig.7 Gate charge characteristic VDS = 24 V VGS = +10/0 V 1.2 250 1.0 VDS = 24 V VGS = +10/0 V tr 200 0.8 TJ = 125C td(on) 0.15 0.10 100 0.05 0 50 Erec(off) x10 Eon 0.00 150 20 40 60 Eoff [mJ] TJ = 125C t [ns] Eon, Erec(off) [mJ] 300 0.0 td(off) tf Eoff 0 20 40 60 td(on) ID = 160 A 350 2.2 300 1.8 0.6 150 0.4 100 20 50 Erec(off) x10 40 60 80 100 0 120 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 1500 1350 td(off) TJ = 125C 1.4 1.2 1050 750 Eoff 0.8 600 0.6 450 tf 0.4 0.2 0.0 1200 900 1.0 300 150 0 20 40 60 80 100 0 120 RG [] RG [] Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching 1650 ID = 160 A 1.6 Eoff [mJ] 200 0 200 0 100 120 140 160 180 VDS = 24 V VGS = +10/0 V 2.0 250 TJ = 125C 0.8 0.0 80 400 Fig. 10 Typ. turn-off energy & switching times vs. collector current, inductive switching t [ns] Eon, Erec(off) [mJ] tr VDS = 24 V VGS = +10/0 V Eon 800 ID [A] 1.4 0.2 1000 0.4 Fig. 9 Typ. turn-on energy & switching times vs. collector current, inductive switching 1.0 1200 600 ID [A] 1.2 175 0.6 0.2 0 100 120 140 160 180 80 150 RG = 39 RG = 39 0.20 125 Fig. 8 Drain current ID vs. case temperature TC 0.30 0.25 100 TC [C] QG [nC] t [ns] 0 t [ns] 0 Fig. 12 Typ. turn-off energy & switching times vs. gate resistor, inductive switching 20110307i 5-6 GWM 160-0055X1 30 50 160 A 100 A 25 IF = 50 A 20 30 IRM [A] trr [ns] 40 20 160 A 15 100 A 10 VR = 24 V TJ = 125C 10 0 200 400 600 800 1000 IF = 50 A VR = 24 V TJ = 125C 5 0 200 1200 400 -diF/dt [A/s] Fig. 13 Reverse recovery time trr of the body diode vs. di/dt Fig. 14 0.6 350 0.5 300 800 1000 1200 Reverse recovery current IRM of the body diode vs. di/dt VGS = 0 V 250 IF [A] 0.4 Qrr [C] 600 -diF/dt [A/s] 160 A 100 A 0.3 0.2 IF = 50 A 150 TJ = -25C 25C 125C 150C 100 0.1 VR = 24 V TJ = 125C 0.0 200 200 400 600 800 1000 50 0 1200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -diF /dt [A/s] Fig. 15 VSD [V] Reverse recovery charge Qrr of the body diode vs. di/dt Fig. 16 Source drain diode current IF vs. source drain voltage VSD (body diode) VGS VDS ID 0.9 VGS t 0.1 VGS 0.9 ID 0.9 ID 0.1 ID td(on) 0.1 ID tr td(off) t tf Thermal Response [K/W] 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 GWM 160-0055X1 1 10 100 1000 10000 t [ms] Fig. 17 Definition of switching times IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved Fig. 18 Typ. thermal impedance junction to heatsink ZthJH with heat transfer paste 20110307i 6-6