VS-8TQ...PbF Series, VS-8TQ...-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 8 A FEATURES Base cathode 2 * 175 C TJ operation * Low forward voltage drop * High frequency operation 3 Anode 1 Cathode TO-220AC * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY * Designed and qualified according to JEDEC-JESD47 Package TO-220AC IF(AV) 8A * Halogen-free according to IEC 61249-2-21 definition (-N3 only) VR 60 V, 80 V, 100 V VF at IF 0.58 V IRM max. 7 mA at 125 C TJ max. 175 C Diode variation Single die EAS 7.5 mJ DESCRIPTION The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) Rectangular waveform VRRM Range IFSM tp = 5 s sine VF 8 Apk, TJ = 125 C TJ Range VALUES UNITS 8 A 60 to 100 V 850 A 0.58 V - 55 to 175 C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VS8TQ060PbF VS8TQ060-N3 VS8TQ080PbF VS8TQ080-N3 VS8TQ100PbF VS8TQ100-N3 UNITS 60 60 80 80 100 100 V VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 8 A Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 0.50 A, L = 60 mH 7.50 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 0.50 A Revision: 29-Aug-11 50 % duty cycle at TC = 157 C, rectangular waveform 5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 850 A 230 Document Number: 94265 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8TQ...PbF Series, VS-8TQ...-N3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 8A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 C 16 A 8A TJ = 125 C 16 A Maximum reverse leakage current See fig. 2 Maximum junction capacitance Typical series inductance Maximum voltage rate of change IRM (1) TJ = 25 C VR = rated VR TJ = 125 C CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 C LS Measured lead to lead 5 mm from package body dV/dt Rated VR VALUES UNITS 0.72 0.88 V 0.58 0.69 0.55 mA 7 500 pF 8 nH 10 000 V/s VALUES UNITS - 55 to 175 C Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 2.0 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.50 Approximate weight Mounting torque C/W 2 g 0.07 oz. minimum 6 (5) kgf * cm maximum 12 (10) (lbf * in) 8TQ060 Marking device Case style TO-220AC 8TQ080 8TQ100 Revision: 29-Aug-11 Document Number: 94265 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8TQ...PbF Series, VS-8TQ...-N3 Series www.vishay.com Vishay Semiconductors 1000 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) TJ = 175 C 100 TJ = 175 C TJ = 125 C TJ = 25 C 10 1 0.1 10 TJ = 150 C TJ = 125 C 1 TJ = 100 C 0.1 TJ = 75 C 0.01 TJ = 50 C 0.001 TJ = 25 C 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 0 20 40 60 80 100 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 C 100 0 10 20 30 40 50 60 70 80 90 100 110 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.1 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 29-Aug-11 Document Number: 94265 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8TQ...PbF Series, VS-8TQ...-N3 Series Vishay Semiconductors 180 7 175 6 Average Power Loss (W) Allowable Case Temperature (C) www.vishay.com DC 170 165 160 Square wave (D = 0.50) 80 % rated VR applied 155 150 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 5 4 RMS limit 3 2 DC 1 145 See note (1) 0 140 0 2 4 6 10 8 12 0 2 4 6 8 10 12 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 10 000 1000 tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) Revision: 29-Aug-11 Document Number: 94265 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8TQ...PbF Series, VS-8TQ...-N3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 8 T Q 100 PbF 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (8 = 8 A) 3 - Package: T = TO-220 4 - Schottky "Q" series 5 - Voltage ratings 6 - Environmental digit 060 = 60 V 080 = 80 V 100 = 100 V PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-8TQ060PbF 50 1000 Antistatic plastic tube VS-8TQ060-N3 50 1000 Antistatic plastic tube VS-8TQ080PbF 50 1000 Antistatic plastic tube VS-8TQ080-N3 50 1000 Antistatic plastic tube VS-8TQ100PbF 50 1000 Antistatic plastic tube VS-8TQ100-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 29-Aug-11 www.vishay.com/doc?95221 TO-220AC PbF www.vishay.com/doc?95224 TO-220AC -N3 www.vishay.com/doc?95068 Document Number: 94265 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A OP 0.014 M B A M E2 (7) Q 3 D D L1 E A1 C Thermal pad C H1 D2 Detail B (6) 2 x b2 2xb Detail B D1 1 2 A (6) H1 (7) (6) D 1 2 3 Lead tip L3 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode L4 L c e1 A Conforms to JEDEC outline TO-220AC View A - A A2 0.015 M B A M SYMBOL MILLIMETERS INCHES NOTES SYMBOL MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E1 A1 1.14 1.40 0.045 0.055 A2 2.56 2.92 0.101 0.115 b 0.69 1.01 0.027 0.040 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 MILLIMETERS INCHES MAX. MIN. MAX. 6.86 8.89 0.270 0.350 6 E2 - 0.76 - 0.030 7 e 2.41 2.67 0.095 0.105 e1 4.88 5.28 0.192 0.208 4 H1 6.09 6.48 0.240 0.255 L 13.52 14.02 0.532 0.552 4 L1 3.32 3.82 0.131 0.150 c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 D 14.85 15.25 0.585 0.600 3 OP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 NOTES MIN. 90 to 93 6, 7 2 2 90 to 93 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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