VS-8TQ...PbF Series, VS-8TQ...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 29-Aug-11 1Document Number: 94265
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 8 A
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-8TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-220AC
IF(AV) 8 A
VR60 V, 80 V, 100 V
VF at IF0.58 V
IRM max. 7 mA at 125 °C
TJ max. 175 °C
Diode variation Single die
EAS 7.5 mJ
Anode
13
Cathode
Base
cathode
2
TO-220AC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 8A
VRRM Range 60 to 100 V
IFSM tp = 5 μs sine 850 A
VF8 Apk, TJ = 125 °C 0.58 V
TJRange - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-
8TQ060PbF
VS-
8TQ060-N3
VS-
8TQ080PbF
VS-
8TQ080-N3
VS-
8TQ100PbF
VS-
8TQ100-N3 UNITS
Maximum DC
reverse voltage VR
60 60 80 80 100 100 V
Maximum working
peak reverse
voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 157 °C, rectangular waveform 8A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
VRRM applied
850
A
10 ms sine or 6 ms rect. pulse 230
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.50 A, L = 60 mH 7.50 mJ
Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 0.50 A
VS-8TQ...PbF Series, VS-8TQ...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 29-Aug-11 2Document Number: 94265
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
8 A TJ = 25 °C 0.72
V
16 A 0.88
8 A TJ = 125 °C 0.58
16 A 0.69
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = rated VR
0.55 mA
TJ = 125 °C 7
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 500 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 8 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 55 to 175 °C
Maximum thermal resistance,
junction to case RthJC DC operation
See fig. 4 2.0
°C/W
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.50
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AC
8TQ060
8TQ080
8TQ100
VS-8TQ...PbF Series, VS-8TQ...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 29-Aug-11 3Document Number: 94265
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
VFM - Forward Voltage Drop (V)
IF - Instantaneous Forward
Current (A)
1.40.2 0.4 0.6 0.81.0 1.2 1.6
1
10
100
TJ = 25 °C
TJ = 175 °C
TJ = 125 °C
1000
0.1
1.82.0 2.2
0
VR - Reverse Voltage (V)
I
R
- Reverse Current (mA)
0.0001
0.001
0.01
0.1
1
0 20406080 100
10
100
T
J
= 150 °C
T
J
= 100 °C
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
T
J
= 50 °C
1000
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
100
10 11030 4020 50 60 70 80 90 100
TJ = 25 °C
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
0.1
1
10
0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.75
D = 0.33
D = 0.25
D = 0.20
D = 0.50
VS-8TQ...PbF Series, VS-8TQ...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 29-Aug-11 4Document Number: 94265
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
140
145
150
155
160
165
180
0122468
10
See note (1)
DC
Square wave (D = 0.50)
80 % rated VR applied
170
175
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
024 12
0
1
2
3
4
7
68
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
DC
5
6
10
t
p
- Square Wave Pulse Duration (µs)
I
FSM
- Non-Repetitive Surge Current (A)
10 100 1000 10 000
100
1000
At any rated load condition and
with rated VRRM applied
following surge
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
VS-8TQ...PbF Series, VS-8TQ...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 29-Aug-11 5Document Number: 94265
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-8TQ060PbF 50 1000 Antistatic plastic tube
VS-8TQ060-N3 50 1000 Antistatic plastic tube
VS-8TQ080PbF 50 1000 Antistatic plastic tube
VS-8TQ080-N3 50 1000 Antistatic plastic tube
VS-8TQ100PbF 50 1000 Antistatic plastic tube
VS-8TQ100-N3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95221
Part marking information TO-220AC PbF www.vishay.com/doc?95224
TO-220AC -N3 www.vishay.com/doc?95068
2
- Current rating (8 = 8 A)
3
- Package:
T = TO-220
4
- Schottky "Q" series
5
- Voltage ratings
060 = 60 V
080 = 80 V
100 = 100 V
Device code
62 43 5
8 T Q 100 PbFVS-
1
1-Vishay Semiconductors product
6-
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
Environmental digit
Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 07-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TO-220AC
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6
A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208
b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552
b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2
c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084
c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2
D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118
D2 11.68 12.88 0.460 0.507 6 90° to 93° 90° to 93°
E 10.11 10.51 0.398 0.414 3, 6
13
2
D
D1
H1
Q
Detail B
C
A
B
L
e1
Lead tip
L4
L3
E
E2
Ø P
0.015 AB
MM
0.014 AB
MM
Seating
plane
c
A2
A1
A
A
A
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Conforms to JEDEC outline TO-220AC
(6)
(6)
(7)
(6)
(7)
View A - A
θ
E1 (6)
D2 (6)
H1
Thermal pad
E
Detail B
D
L1
D
123
CC
2 x b2 2 x b
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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