SEMICONDUCTOR KTC945B TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity. : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) Low Noise : NF=1dB(Typ.). at f=1kHz N E K Complementary to KTA733B(O, Y, GR class). G J D MAXIMUM RATING (Ta=25) UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range F 1 2 3 C RATING MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M SYMBOL L CHARACTERISTIC H F DIM A B C D E F G H J K L M N 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=100A, IE=0 60 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 50 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=100A, IC=0 5 - - V Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A 70 - 700 hFE (Note) DC Current Gain VCE=6V, IC=2mA Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1.0 V fT VCE=10V, IC=10mA - 300 - MHz Transition Frequency Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF Noise Figure NF VCE=6V, IC=0.1mA Rg=10k, f=1kHz - 1.0 10 dB Note : hFE Classification 2001. 9. 14 O:70~140, Y:120~240, Revision No : 2 GR:200~400, BL:350~700 1/2 KTC945B h FE - I C I C - VCE 6.0 200 3.0 1k COMMON EMITTER Ta=25 C 5.0 2.0 COMMON DC CURRENT GAIN h FE COLLECTOR CURRENT IC (mA) 240 160 1.0 120 0.5 80 I B=0.2mA 40 0 0 0 1 2 3 4 5 6 500 EMITTER 300 100 50 30 VCE =1V 10 0.1 7 0.3 1 COMMON EMITTER I C /I B =10 1 0.5 0.3 0.1 Ta=100 C 25 C -25 C 3 10 30 100 300 30 10 3 1 0.3 0.2 0.4 0.6 0.8 1.0 BASE-EMITTER VOLTAGE V BE (V) 2001. 9. 14 300 COMMON EMITTER VCE =10V Ta=25 C 1k 500 300 100 50 30 10 -0.1 -0.3 -1 -3 -10 -30 -100 Pc - Ta 100 0 3k I B - V BE COLLECTOR POWER DISSIPATION PC (mW) 300 100 EMITTER CURRENT I E (mA) COMMON EMITTER VCE =6V 1k 30 COLLECTOR CURRENT I C (mA) Ta=1 00 C BASE CURRENT I B (A) 3k 1 TRANSITION FREQUENCY f T (MHz) 3 0.3 10 f T - IE Ta=2 5 C Ta=25 C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) V CE(sat) - I C 0.01 0.1 3 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 0.05 0.03 VCE =6V Ta=100 C Ta=25 C Ta=-25 C Revision No : 2 1.2 -300 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2/2