2001. 9. 14 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC945B
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
แดExcellent hFE Linearity.
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)
แดLow Noise : NF=1dB(Typ.). at f=1kHz
แดComplementary to KTA733B(O, Y, GR class).
MAXIMUM RATING (Ta=25แดฑ)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25แดฑ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC150 mA
Collector Power Dissipation PC625 mW
Junction Temperature Tj150 แดฑ
Storage Temperature Range Tstg -55แด150 แดฑ
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=100แปA, IE=0 60 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 50 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=100แปA, IC=0 5 - - V
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 แปA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 แปA
DC Current Gain hFE (Note) VCE=6V, IC=2mA 70 - 700
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1.0 V
Transition Frequency fTVCE=10V, IC=10mA - 300 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF
Noise Figure NF VCE=6V, IC=0.1mA Rg=10kแฝต, f=1kHz - 1.0 10 dB
Note : hFE Classification O:70~140, Y:120~240, GR:200~400, BL:350~700
2001. 9. 14 2/2
KTC945B
Revision No : 2
COLLECTOR CURRENT I (mA)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
30
DC CURRENT GAIN hFE
1k
3001000.30.1
COLLECTOR CURRENT I (mA)
C
h - I
0.3
COLLECTOR-EMITTER SATURATION
3
CE(sat)
0.01
300100300.1
COLLECTOR CURRENT I (mA)
C
V - I
10
BASE CURRENT I (ยตA)
0.3
B
3k
0
BASE-EMITTER VOLTAGE V (V)
BE
I - V
40
80
120
160
200
240
1234 567
COMMON
EMITTER
Ta=25 C
6.0 5.0
3.0 2.0
1.0
0.5
I =0.2mA
0
B
FE C
1 3 10 30
50
100
300
500
10
CE(sat) C
VOLTAGE V (V)
0.3 1 3 10
0.03
0.05
0.1
0.5
1
COMMON
EMITTER
I /I =10
CB
Ta=100 C
25 C
-25 C
CE
V =10V
Ta=25 C
COMMON EMITTER
1k
500
100
50
30
-10-3-1-0.3
TRANSITION FREQUENCY f (MHz)
ET
f - I
E
EMITTER CURRENT I (mA)
-0.1 -30 -100 -300
10
T
3k
300
BBE
0.2 0.4 0.6 0.8 1.0 1.2
1
3
30
100
300
1k
COMMON
V =6V
CE
EMITTER
Ta=100 C
Ta=25 C
Ta=-25 C
COMMON
Ta=100 C
Ta=25 C
Ta=-25 C
V =6V
CE
CE
V =1V
EMITTER
C
P (mW)
0
COLLECTOR POWER DISSIPATION
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
25 50 75 100 125 150 175
100
200
300
400
500
600
700
