For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIER - SMT
1
HMC490LP5 / 490LP5E
v04.0213
GaAs pHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 16 GHz
General Description
Features
Functional Diagram
The HMC490LP5(E) is a high dynamic range GaAs
pHEMT MMIC Low Noise Amplier which operates
between 12 and 16 GHz. The HMC490LP5(E) provides
23 dB of gain, 2.5 dB noise gure and an output IP3
of +34 dBm from a +5V supply voltage. This versatile
amplier combines excellent, stable +25 dBm P1dB
output power with very low noise gure making it ideal
for receive and transmit applications. The amplier is
packaged in a leadless 5x5 mm QFN surface mount
package.
Noise Figure: 2.5 dB
P1dB Output Power: +25 dBm
Gain: 23 dB
Output IP3: +34 dBm
+5V Supply
50 Ohm Matched Input/Output
32 Lead 5x5mm SMT Package: 25mm²
Electrical Specications, TA = +25° C, Vdd = 5V, Idd = 200 mA*
Typical Applications
The HMC490LP5(E) is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• Military EW, ECM & C3I
Parameter Min. Ty p. Max. Units
Frequency Range 12 - 16 GHz
Gain 20 23 dB
Gain Variation Over Temperature 0.03 0.04 dB/ °C
Noise Figure 2.5 3.5 dB
Input Return Loss 8dB
Output Return Loss 8dB
Output Power for 1 dB Compression (P1dB) 22 25 dBm
Saturated Output Power (Psat) 27 dBm
Output Third Order Intercept (IP3) 34 dBm
Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.) 200 mA
* Adjust Vgg between -2 to 0V to achieve Idd = 200 mA typical.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIER - SMT
2
HMC490LP5 / 490LP5E
v04.0213
GaAs pHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 16 GHz
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Noise Figure vs. Temperature Output IP3 vs. Temperature
-20
-10
0
10
20
30
8 10 12 14 16 18 20
S21 S11 S22
RESPONSE (dB)
FREQUENCY (GHz)
8
10
12
14
16
18
20
22
24
26
28
30
10 11 12 13 14 15 16 17 18
+25 C +85 C -40 C
GAIN (dB)
FREQUENCY (GHz)
-14
-12
-10
-8
-6
-4
-2
0
10 11 12 13 14 15 16 17 18
+25 C +85 C -40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
10 11 12 13 14 15 16 17 18
+25 C +85 C -40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
10 11 12 13 14 15 16 17 18
+25 C +85 C -40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
10
15
20
25
30
35
40
10 11 12 13 14 15 16 17 18
+25 C +85 C -40 C
IP3 (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIER - SMT
3
HMC490LP5 / 490LP5E
v04.0213
GaAs pHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 16 GHz
P1dB vs. Temperature
Gain, Noise Figure & OIP3 vs.
Supply Voltage @ 14 GHz, Idd= 200 mA Power Compression @ 14 GHz
Power Dissipation
Psat vs. Temperature
Gain, Noise Figure & IP3 vs.
Supply Current @ 14 GHz, Vdd= 5V*
* Idd is controlled by varying Vgg
0
4
8
12
16
20
24
28
32
10 11 12 13 14 15 16 17 18
+25 C +85 C -40 C
P1dB (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
32
10 11 12 13 14 15 16 17 18
+25 C +85 C -40 C
Psat (dBm)
FREQUENCY (GHz)
20
24
28
32
36
40
0
1
2
3
4
5
3.5 4 4.5 5 5.5
Gain IP3
Noise Figure
GAIN (dB), IP3 (dBm)
NOISE FIGURE (dB)
Vdd (V)
0
5
10
15
20
25
30
-20 -15 -10 -5 0 5 10
Pout Gain PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
20
24
28
32
36
40
0
1
2
3
4
5
3.5 4 4.5 5 5.5
Gain IP3
Noise Figure
GAIN (dB), IP3 (dBm)
NOISE FIGURE (dB)
Vdd (V)
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-20 -15 -10 -5 0 5 10
Max Pdis @ 85C
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIER - SMT
4
HMC490LP5 / 490LP5E
v04.0213
GaAs pHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 16 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5V
Gate Bias Voltage (Vgg) -4 to 0V
RF Input Power (RFIN)(Vdd = +5V) +10 dBm
Channel Temperature 175 °C
Continuous Pdiss (T = 85 °C)
(derate 17.9 mW/°C above 85 °C) 1.6 W
Thermal Resistance
(channel to ground paddle) 56 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Vdd (V) Idd (mA)
+3.0 140
+3.5 154
+4.0 168
+4.5 188
+5.0 200
+5.5 208
Typical Supply Current vs. Vdd
Note: Amplier will operate over full voltage ranges shown
above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Reverse Isolation vs. Temperature
-70
-60
-50
-40
-30
-20
-10
0
10 11 12 13 14 15 16 17 18
+25 C +85 C -40 C
ISOLATION (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIER - SMT
5
HMC490LP5 / 490LP5E
v04.0213
GaAs pHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 16 GHz
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC490LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H490
XXXX
HMC490LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H490
XXXX
[1] Max peak reow temperature of 235 °C
[2] Max peak reow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Outline Drawing
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIER - SMT
6
HMC490LP5 / 490LP5E
v04.0213
GaAs pHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 16 GHz
Pin Descriptions
Application Circuit
Pin Number Function Description Interface Schematic
1, 2, 6 - 12,
14 - 19, 23, 24,
26, 27, 29 - 31
N/C
The pins are not connected internally; however, all data
shown herein was measured with these pins connected to
RF/DC ground externally.
3, 5, 20, 22 GND Package bottom must also
be connected to RF/DC ground.
4RFIN This pad is AC coupled
and matched to 50 Ohms.
13 Vgg
Gate control for amplier. Adjust to achieve Idd of 200 mA.
Please follow “MMIC Amplier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and
0.01 µF are required.
21 RFOUT This pad is AC coupled
and matched to 50 Ohms.
25, 28, 32 Vdd3, 2, 1 Power Supply Voltage for the amplier. External bypass
capacitors of 100 pF and 0.01 µF are required.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIER - SMT
7
HMC490LP5 / 490LP5E
v04.0213
GaAs pHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 16 GHz
Evaluation PCB
List of Materials for Evaluation PCB 108402 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 - J8 DC Pin
C1 - C4 1000 pF Capacitor, 0402 Pkg.
C5 - C8 4.7 µF Capacitor, Tantalum
U1 HMC490LP5 / HMC490LP5E
PCB [2] 108540 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and package bottom should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used
to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIER - SMT
8
HMC490LP5 / 490LP5E
v04.0213
GaAs pHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 16 GHz
Notes: