MJE200 MJE200 Feature * Low Collector-Emitter Saturation Voltage * High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) * Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter- Base Voltage IC Collector Current PC Collector Dissipation (TC=25C) TJ TSTG Value 40 Units V 25 V 8 V 5 A 15 W Junction Temperature 150 C Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage Test Condition IC=10mA, IB=0 ICBO Collector Cut-off Current VCB=40V, IE=0 VCB=40V, IE=0 @ TJ=125C IEBO Emitter Cut-off Current VBE=8V, IC=0 hFE DC Current Gain VCE=1V, IC=500mA VCE=1V, IC=2A VCE=2V, IC=5A VCE(sat) Collector-Emitter Saturation Voltage Min. 25 70 45 10 IC=500mA, IB=50mA IC=2A, IC=200mA IC=5A, IB=1A Max. Units V 100 100 nA A 100 nA 180 0.3 0.75 1.8 V V V V VBE(sat) Base- Emitter Saturation Voltage IC=5A, IB=1A 2.5 VBE(on) Base-Emitter ON Voltage VCE=1V, IC=2A 1.6 fT Current Gain Bandwidth Product VCE=10V, IC=100mA Cob Output Capacitance VCB=10V, IE=0, f=0.1MHz (c)2001 Fairchild Semiconductor Corporation 65 V MHz 80 pF Rev. A2, June 2001 MJE200 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics hFE, DC CURRENT GAIN 1000 VCE = 2V 100 VCE=1V 10 1 0.01 0.1 1 10 10 IC = 10 IB 1 0.1 0.01 0.01 IC[A], COLLECTOR CURRENT V BE(sat) V CE(sat) 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 100 1000 IC[A], COLLECTOR CURRENT Cob[pF], CAPACITANCE f=0.1MHZ IE=0 100 10 10 10 5m 5 1m 00 s s 0 s s DC 1 0.1 1 0.1 1 10 100 VCB[V], COLLECTOR BASE VOLTAGE 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area PC[W], POWER DISSIPATION 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJE200 Package Demensions 8.00 0.30 11.00 o3.20 0.10 0.20 3.25 0.20 14.20MAX 3.90 0.10 TO-126 (1.00) (0.50) 0.75 0.10 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 16.10 0.30 13.06 0.75 0.10 0.20 1.75 0.20 1.60 0.10 +0.10 0.50 -0.05 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2001 Fairchild Semiconductor Corporation Rev. H3