BSL205N
OptiMOS®2 Small-Signal-Transistor
Features
• Dual N-channel
• Enhancement mode
• Super Logic level (2.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• Pb-free lead plating; RoHS compliant
• Halogen free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter (1) Symbol Conditions Unit
Continuous drain current
IDTA=25 °C 2.5 A
TA=70 °C 2.0
Pulsed drain current
ID,pulse TA=25 °C 10
Avalanche energy, single pulse
EAS ID=2.5 A, RGS=25 W10.8 mJ
Reverse diode dv/dtdv/dt
ID=2.5 A, VDS=16 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage
VGS ±12 V
Power dissipation(3) Ptot TA=25 °C W
Operating and storage temperature
Tj, Tstg -55 ... 150 °C
ESD Class
JESD22-A114 -HBM class 0 (<250V)
Soldering Temperature 260 °C
IEC climatic category; DIN IEC 68-1 55/150/56
(1) Remark: one of both transistors in operation.
Value
0.5
PG-TSOP6
1 2
3
4
5
6
Type
Package
Tape and Reel Information
Marking
Lead Free
Packing
BSL205N
PG-TSOP6
H6327: 3000 pcs/ reel
sPK
Yes
Non dry
VDS
20
V
RDS(on),max
VGS=4.5 V
50
mW
VGS=2.5 V
85
ID
2.5
A
Product Summary
Rev 2.3 page 1 2013-11-06
BSL205N
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - ambient
RthJA minimal footprint(2) - - 250 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS= 0 V, ID= 250 µA 20 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=11 µA 0.6 0.95 1.2
Drain-source leakage current
IDSS
VDS=20 V, VGS=0 V,
Tj=25 °C
- - 1
mA
VDS=20 V, VGS=0 V,
Tj=150 °C
- - 100
Gate-source leakage current
IGSS VGS=12 V, VDS=0 V - - 100 nA
Drain-source on-state resistance
RDS(on) VGS=2.5 V, ID=1.95 A -62 85 mW
VGS=4.5 V, ID=2.5 A -39 50
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=2 A
-8.6 - S
Values
(2) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mkm long; they are present on both
sides of the PCB.
Rev 2.3 page 2 2013-11-06
BSL205N
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -315 419 pF
Output capacitance
Coss -114 152
Reverse transfer capacitance
Crss -16 24
Turn-on delay time
td(on) -5.8 -ns
Rise time
tr-2.9 -
Turn-off delay time
td(off) -11.0 -
Fall time
tf-2.4 -
Gate Charge Characteristics
Gate to source charge
Qgs -0.65 0.86 nC
Gate to drain charge
Qgd -0.5 0.7
Gate charge total
Qg-2.1 3.2
Gate plateau voltage
Vplateau - 2 - V
Reverse Diode
Diode continous forward current IS- - 0.5 A
Diode pulse current
IS,pulse - - 10
Diode forward voltage
VSD
VGS=0 V, IF=2.5 A,
Tj=25 °C
-0.8 1.1 V
Reverse recovery time
trr -10 -ns
Reverse recovery charge
Qrr -2.2 -nC
VR=10 V, IF=2.5 A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=0 V, VDS=10 V,
f=1 MHz
VDD=10 V, VGS=4.5 V,
ID=2.5 A, RG,ext=6 W
VDD=10 V, ID=2.5 A,
VGS=0 to 4.5 V
Rev 2.3 page 3 2013-11-06
BSL205N
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≥4.5 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
10 µs
100 µs
1 ms
10 ms
DC
10-3
10-2
10-1
100
101
102
0.1 1 10 100
ID [A]
VDS [V]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5
10-4
10-3
10-2
10-1
100
101
102
10-1
100
101
102
103
ZthJA [K/W]
tp [s]
0
0.1
0.2
0.3
0.4
0.5
0.6
0 40 80 120 160
Ptot [W]
TA [°C]
0
0.5
1
1.5
2
2.5
3
0 40 80 120 160
ID [A]
TA [°C]
Rev 2.3 page 4 2013-11-06
BSL205N
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
2.2 V
2.5 V
3 V
3.5 V
4.5 V
6 V
0
10
20
30
40
50
60
70
80
90
100
0 2 4 6 8 10
RDS(on) [mW]
ID [A]
0
5
10
15
20
0 2 4 6 8
gfs [S]
ID [A]
1.8 V
2 V
2.2 V
2.4 V
2.5 V
3 V
4.5 V
0
2
4
6
8
10
0 1 2 3
ID [A]
VDS [V]
25 °C
150 °C
0
1
2
3
4
0 1 2 3
ID [A]
VGS [V]
Rev 2.3 page 5 2013-11-06
BSL205N
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=2.5 A; VGS=4.5 V VGS(th)=f(Tj); VDS=VGS; ID=11 µA
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
98 %
0
20
40
60
80
100
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj [°C]
typ
98 %
2 %
0
0.4
0.8
1.2
1.6
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj [°C]
Ciss
Coss
Crss
101
102
103
0 5 10 15 20
C [pF]
VDS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-3
10-2
10-1
100
101
0 0.4 0.8 1.2 1.6
IF [A]
VSD [V]
Rev 2.3 page 6 2013-11-06
BSL205N
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=2.5 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=250 µA
16
17
18
19
20
21
22
23
24
25
-60 -20 20 60 100 140
VBR(DSS) [V]
Tj [°C]
4 V
10 V
16 V
0
1
2
3
4
5
6
7
8
0 1 2 3 4
VGS [V]
Qgate [nC]
25 °C
100 °C
125 °C
100
101
102
103
10-1
100
101
IAV [A]
tAV [µs]
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
Rev 2.3 page 7 2013-11-06
BSL205N
Package Outline:
Footprint: Packaging:
Dimensions in mm
TSOP6
Rev 2.3 page 8 2013-11-06
BSL205N
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 2.3 page 9 2013-11-06
