DSA15IM200UC
preliminary
Low Loss and Soft Recovery
High Performance Schottky Diode
Single Diode
Schottky Diode Gen ²
4
1
3
Part number
DSA15IM200UC
Marking on Product: SFMAUI
Backside: cathode
FAV
F
VV0.78
RRM
15
200
=
V= V
I= A
Features / Ad vantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
TO-252 (DPak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA15IM200UC
preliminary
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
0.94
R2K/
W
R
min.
15
V
RSM
V
250T = 25°C
VJ
T = °C
VJ
m
A
2.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
150
P
tot
75
W
T = 25°C
C
RK/
W
15
200
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.10
T = 25°C
VJ
125
V
F0
V
0.53T = °C
VJ
175
r
F
10.8 m
Ω
V
0.78T = °C
VJ
I = A
F
V
15
0.95
I = A
F
30
I = A
F
30
threshold voltage
slope resistance for power loss calculation only
µ
A
125
V
RRM
V
200
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
67
j
unction capacitance V = V24 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
200
A
200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
200
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA15IM200UC
preliminary
1)
I
RMS
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
Ratings
Z Y Y WW
Logo
Part number
A
ssembly Line
abcdefg
P
r
odu
c
tM
a
r
ki
n
g
IXYS
Date Code
D
S
A
15
IM
200
UC
Part number
Diode
Schottky Diode
low VF
Single Diode
TO-252AA (DPak)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g0.3
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N60
mount ing for ce w i th cli p 20
I
RMS
RMS current 20 A
per terminal
150-55
TO-252
(
DPak
)
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
DSA15IM200UC 510408Tape & Reel 2500SFMAUIStandard
T
stg
°C150
storage temperature -55
threshold voltage V0.53
mΩ
V
0 max
R
0 max
slope resistance * 7.6
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Schottky
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA15IM200UC
preliminary
4
1
3
Outlines TO-252 (DPak)
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA15IM200UC
preliminary
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0
6
12
18
24
30
048121620
0
2
4
6
8
10
12
14
16
0.001 0.01 0.1 1 10
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0 40 80 120 160 200
0
4
8
12
16
20
24
I
F(AV)
[A]
T
C
[°C]
t[s]
0 50 100 150 200
0
50
100
150
200
250
C
T
[pF]
I
F
[A]
V
F
[V] V
R
[V]
Z
thJC
[K/W]
DC
d= 0.5
I
F(AV)
[A]
P
(AV)
[W]
TVJ =
150°C
125°C
25°C
TVJ=25°C
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
Fig. 4 Avg: forward current I
F(AV)
vs. case temperature T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case
d =
DC
0.5
0.33
0.25
0.17
0.08
Schottky
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
