AUIRF2807
VDSS 75V
RDS(on) max. 13m
ID (Silicon Limited) 82A
ID (Package Limited) 75A
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Stripe
Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
1 2017-09-29
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 82
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 58
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 75
IDM Pulsed Drain Current 280
PD @TC = 25°C Maximum Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 340
mJ
IAR Avalanche Current 43 A
EAR Repetitive Avalanche Energy 23 mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
dV/dt Peak Diode Recovery dv/dt 5.9 V/ns
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.65
°C/W
RCS Case-to-Sink, Flat, Greased Surface 0.50 –––
RJA Junction-to-Ambient ––– 62
TO-220AB
AUIRF2807
S
D
G
Base part number Package Type Standard Pack
Form Quantity
AUIRF2807 TO-220 Tube 50 AUIRF2807
Orderable Part Number
G D S
Gate Drain Source
HEXFET® Power MOSFET
AUIRF2807
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Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.074 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 13 m VGS = 10V, ID = 43A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 38 ––– ––– S VDS = 50V, ID = 43A
IDSS Drain-to-Source Leakage Current ––– ––– 25 µA VDS = 75 V, VGS = 0V
––– ––– 250 VDS = 60V,VGS = 0V,TJ =150°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– ––– 160
nC
ID = 43A
Qgs Gate-to-Source Charge ––– ––– 29 VDS = 60V
Qgd Gate-to-Drain Charge ––– ––– 55 VGS = 10V, See Fig.6 and 13
td(on) Turn-On Delay Time ––– 13 –––
ns
VDD = 38V
tr Rise Time ––– 64 ––– ID = 43A
td(off) Turn-Off Delay Time ––– 49 ––– RG= 2.5
tf Fall Time ––– 48 ––– VGS = 10V, See Fig. 10
LD Internal Drain Inductance ––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
LS Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
Ciss Input Capacitance ––– 3820 –––
pF
VGS = 0V
Coss Output Capacitance ––– 610 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 82
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 280 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 43A,VGS = 0V
trr Reverse Recovery Time ––– 100 150 ns TJ = 25°C ,IF = 43A
Qrr Reverse Recovery Charge ––– 410 610 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 370µH, RG = 25, IAS = 43A, VGS =10V (See fig. 12)
I
SD 43A, di/dt 300A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
This is a calculated value limited to TJ = 175°C .
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
AUIRF2807
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Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance
Vs. Temperature
Fig. 1 Typical Output Characteristics
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
4.0 5.0 6.0 7.0 8.0 9.0
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
71A
AUIRF2807
4 2017-09-29
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
6000
7000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS
= 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + Cgd
040 80 120 160
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
43A
V = 15V
DS
V = 37V
DS
V = 60V
DS
0.1
1
10
100
1000
0.0 0.4 0.8 1.2 1.6 2.0 2.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
1 10 100 1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
AUIRF2807
5 2017-09-29
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10a. Switching Time Test Circuit
25 50 75 100 125 150 175
0
20
40
60
80
100
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
Fig 10b. Switching Time Waveforms
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Not es:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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6 2017-09-29
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
25 50 75 100 125 150 175
0
100
200
300
400
500
600
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
18A
30A
43A
AUIRF2807
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Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
AUIRF2807
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TO-220AB package is not recommended for Surface Mount Application.
TO-220AB Part Marking Information
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUIRF2807
Lot Code
Part Number
IR Logo
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
AUIRF2807
9 2017-09-29
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level 3L-TO-220AB N/A
ESD
Machine Model Class M4 (+/- 800V)†
AEC-Q101-002
Human Body Model Class H1C (+/- 2000V)†
AEC-Q101-001
Charged Device Model Class C5 (+/- 2000V)†
AEC-Q101-005
RoHS Compliant Yes
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
9/29/2017 Updated datasheet with corporate template.
Corrected typo error on package outline and part marking on page 8.
† Highest passing voltage.
