VS-10CDH06-M3
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Revision: 10-Feb-15 1Document Number: 95808
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Hyperfast Rectifier, 2 x 5 A FRED Pt®
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• For PFC CRM / CCM, snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in PFC, boost, in the
AC/DC section of SMPS, freewheeling and clamp diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-263AC (SMPD)
IF(AV) 2 x 5 A
VR600 V
VF at IF1 V
trr 35 ns
TJ max. 175 °C
Diode variation Dual die
Top View Bottom View
TO-263AC (SMPD)
K
1
2
K
Cathode Anode 2
Anode 1
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage VRRM 600 V
Average rectified forward current per device IF(AV) Tsolder pad = 153 °C 10
A
per diode 5
Non-repetitive peak surge current per device IFSM TJ = 25 °C, 6 ms square pulse 110
per diode 60
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VRIR = 100 μA 600 - -
V
Forward voltage, per diode VF
IF = 5 A - 1.2 1.5
IF = 5 A, TJ = 150 °C - 1 1.25
Reverse leakage current, per diode IR
VR = VR rated - - 3 μA
TJ = 150 °C, VR = VR rated - 15 150
Junction capacitance, per diode CTVR = 600 V - 6 - pF
VS-10CDH06-M3
www.vishay.com Vishay Semiconductors
Revision: 10-Feb-15 2Document Number: 95808
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - 35 -
ns
IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 35
TJ = 25 °C
IF = 5 A,
dIF/dt = 500 A/μs,
VR = 400 V
-45-
TJ = 125 °C - 70 -
Peak recovery current IRRM
TJ = 25 °C - 7 - A
TJ = 125 °C - 10 -
Reverse recovery charge Qrr
TJ = 25 °C - 160 - nC
TJ = 125 °C - 370 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range TJ, TStg -55 - +175 °C
Thermal resistance, per diode
junction to solder pad RthJ-Sp -2.43.3°C/W
Approximate weight 0.55 g
0.02 oz.
Marking device Case style TO-263AC (SMPD) 10CDH06
0.1
1
10
100
0.20.40.60.81.01.21.41.61.82.02.2
IF- Instantaneous Forward Current (A)
VF- Forward Voltage Drop (V)
TJ= 150 °C
TJ= 25 °C
TJ= 175 °C
TJ= 125 °C
0.01
0.1
1
10
100
0 100 200 300 400 500 600
IR- Reverse Current (μA)
VR- Reverse Voltage (V)
TJ= 175 °C
TJ= 125 °C
TJ= 25 °C
TJ= 150 °C
VS-10CDH06-M3
www.vishay.com Vishay Semiconductors
Revision: 10-Feb-15 3Document Number: 95808
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
1
10
100
0 100 200 300 400 500 600
CT- Junction Capacitance (pF)
VR- Reverse Voltage (V)
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
t
1
- Rectangular Pulse Duration (s)
0.50
0.20
0.10
0.05
0.02
0.01
DC
145
150
155
160
165
170
175
180
0123456
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
Square wave (D = 0.50)
80 % rated VRapplied
See note (1)
DC
0
2
4
6
8
10
012345678
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
VS-10CDH06-M3
www.vishay.com Vishay Semiconductors
Revision: 10-Feb-15 4Document Number: 95808
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt
Fig. 9 - Reverse Recovery Waveform and Definitions
0
20
40
60
80
100
120
140
100 1000
t
rr
(ns)
dI
F
/dt (A/μs)
125 °C
25 °C
0
50
100
150
200
250
300
350
400
450
100 1000
Qrr (nC)
dIF/dt (A/μs)
125 °C
25 °C
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
VS-10CDH06-M3
www.vishay.com Vishay Semiconductors
Revision: 10-Feb-15 5Document Number: 95808
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-10CDH06-M3/I 2000 2000 13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95604
Part marking information www.vishay.com/doc?95566
Packaging information www.vishay.com/doc?88869
2- Current rating (10 A)
3- Circuit conguration:
4- D = SMPD package
5- Process type,
H = hyperfast recovery
6- Voltage code (06 = 600 V)
7- -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
Device code
51 32 4 6 7
VS- 10 C D H 06 -M3
1-Vishay Semiconductors product
C = common cathode
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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