BSS138
Document number: DS30144 Rev. 17 - 2 1 of 5
www.diodes.com March 2012
© Diodes Incorporated
BSS138
N-CHANNEL ENHAN CEMENT MODE MOSFET
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
Ordering Information (Note 3)
Part Number Qualification Case Packaging
BSS138-7-F Commercial SOT23 3000/Tape & Reel
BSS138Q-7-F Automotive SOT23 3000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Product manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 … 2011 2012 2013 2014 2015 2016 2017
Code J K L M N P R … Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View E
q
uivalent Circuit To
p
View
D
GS
K = SAT (Shanghai Assembly / Test site)
C = CAT (Chengdu Assembly / Test site)
38 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Source
Gate
Drain
C38
YM
K38
YM
BSS138
Document number: DS30144 Rev. 17 - 2 2 of 5
www.diodes.com March 2012
© Diodes Incorporated
BSS138
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 50 V
Drain-Gate Voltage RGS ≤ 20KΩ V
DGR 50 V
Gate-Source Voltage Continuous VGSS
±
20 V
Gate-Source Voltage Non repetitive, Pulse width<50
μ
s
±
40 V
Drain Current Continuous ID 200 mA
Pulsed Drain Current (10μs pulse duty cycle = 1%) IDM 1 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Power Dissipation (Note 4) PD 300 mW
Thermal Resistance, Junction to Ambient (Note 4) R
θ
JA 417 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS 50 75 ⎯ V VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 µA
VDS = 50V, VGS = 0V
Gate-Body Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS
(
th
)
0.5 1.2 1.5 V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance RDS
(
ON
)
⎯ 1.4 3.5 Ω V
GS = 10V, ID = 0.22A
Forward Transconductance gFS 100 ⎯ ⎯ mS VDS = 25V, ID = 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ ⎯ 50 pF
VDS = 10V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss ⎯ ⎯ 25 pF
Reverse Transfer Capacitance Crss ⎯ ⎯ 8.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD
(
ON
)
⎯ ⎯ 20 ns
VDD = 30V, ID = 0.2A, RGEN = 50Ω
Turn-Off Delay Time tD
(
OFF
)
⎯ ⎯ 20 ns
Notes: 4. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
0
0.1
0.2
0.3
0.4
0.5
0.6
010
91 2345678
I, D
R
AIN-S
O
U
R
C
E
C
U
R
R
EN
T
(A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
DS
T = 25C
j
°
V = 3.5V
GS
V = 3.25V
GS
V = 3.0V
GS
V = 2.75V
GS
V = 2.5V
GS
0
V , GATE-SOURCE VOLT AGE (V)
Fig. 2 Transfer Characteristics
GS
0.1
0.2
0.3
0.5
0.4
0.6
0.7
0.8
011.5
0.5 23.5
44.5
2.5 3
I, D
R
AI
N
-S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
D
-55 C
°
150 C
°
25 C
°
V = 1V
DS
BSS138
Document number: DS30144 Rev. 17 - 2 3 of 5
www.diodes.com March 2012
© Diodes Incorporated
BSS138
0.65
T, JUNCTION TEMPERATURE (°C)
Fig . 3 Drain-S ource On- R esistanc e vs. Junctio n Temperature
j
0.85
1.05
1.25
1.65
1.45
1.85
2.05
2.25
2.45
-55 -5 45 95 145
V = 10V
GS
V = 4.5V
GS
I = 0.5A
D
I = 0.075A
D
R , NORMALIZED DRAIN-SOUR CE
ON-RESISTANCE ( )
DS(ON)
Ω
0
0.2
0.4
0.6
0.8
1
1.4
1.2
2
1.8
1.6
-55 -25
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
T, JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
j
I = 1.0mA
D
5356595125
155
0
I , DRAIN-CURRENT (A)
Fig . 5 Dr ai n- Sour ce On- R e sist ance vs. Drai n-Cu r r ent
D
1
2
3
4
5
6
7
8
00.02 0.04 0.06 0.08 0.160.140.12
0.1
150 C
°
25 C
°
V = 2.5V
GS
-55 C
°
R
, D
R
AIN
-
S
O
U
R
C
E
O
N
-
R
ESIS
T
AN
C
E (
)
DS(ON)
Ω
0
I , DRAIN-CURRENT (A)
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
D
1
2
3
5
4
6
7
8
9
00.05 0.1 0.2
0.15 0.25
150 C
°
-55 C
°
25 C
°
V = 2.75V
GS
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0
1
2
3
4
5
6
00.1 0.2 0.3 0.4 0.5
I , DRAIN-CURRENT (A)
Fig . 7 Dr ai n - S ource On- Res istance vs . D r ai n-Cu r r ent
D
150 C
°
-55 C
°
25 C
°
V = 4.5V
GS
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0
0.5
1
1.5
2
2.5
3
3.5
00.1 0.2 0.3 0.4 0.5
I , DRAIN-CURRENT (A)
Fig . 8 Drai n- S ource On Re si st ance vs. D r ai n- C ur r ent
D
150 C
°
-55 C
°
25 C
°
V = 10V
GS
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
BSS138
Document number: DS30144 Rev. 17 - 2 4 of 5
www.diodes.com March 2012
© Diodes Incorporated
BSS138
I, DI
O
DE
C
U
R
R
EN
T
(A)
D
0.001
0.01
0.1
1
V , DIODE FORWARD VOLT AGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
SD
0 0.2 0.4 0.6 0.8 11.2
150 C
°
-55 C
°
25 C
°
C
,
C
A
P
A
C
I
T
A
N
C
E (
p
F
)
1
10
100
V , DRAIN-SOURC E VO LTAGE (V)
Fig . 10 Capacit anc e vs. Drai n- Sour ce Volta ge
DS
0 5 10 15 20 25 30
V = 0V
f = 1MHz
GS
C
rSS
C
OSS
C
iSS
Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
BSS138
Document number: DS30144 Rev. 17 - 2 5 of 5
www.diodes.com March 2012
© Diodes Incorporated
BSS138
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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