1
File Number 3211.3
1-888-INTERSIL or 321-724-7143 |Copyright © Intersil Corporation 2000
RURG5060
50A, 600V Ultrafast Diode
The RURG5060 is an ultrafast diode with soft recovery
characteristics (trr < 65ns). It has low forward voltage drop
and is of silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and ultrafast recovery with soft recovery characteristic
minimizes ringing and electrical noise in many power
switching circuits, thus reducing power loss in the switching
transistors.
Formerly developmental type TA09909.
Symbol
Features
• Ultrafast with Soft Recovery. . . . . . . . . . . . . . . . . . .<65ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging JEDEC STYLE 2 LEAD TO-247
Ordering Information
PART NUMBER PACKAGE BRAND
RURG5060 TO-247 RURG5060
NOTE: When ordering, use the entire part number.
K
A
CATHODE
(BOTTOM CATHODE
ANODE
SIDE METAL)
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RURG5060 UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM 600 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 600 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR600 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
(TC = 102oC) 50 A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFRM
(Square Wave, 20kHz) 100 A
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFSM
(Halfwave, 1 Phase, 60Hz) 500 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD150 W
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AVL 40 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ-65 to 175 oC
Data Sheet January 2000
2
Electrical Specifications TC = 25oC, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNITS
VFIF = 50A - - 1.6 V
IF = 50A, TC = 150oC - - 1.4 V
IRVR = 600V - - 250 µA
VR = 600V, TC = 150oC - - 1.5 mA
trr IF = 1A, dIF/dt = 100A/µs--65ns
IF = 50A, dIF/dt = 100A/µs--75ns
taIF = 50A, dIF/dt = 100A/µs - 30 - ns
tbIF = 50A, dIF/dt = 100A/µs - 20 - ns
RθJC --1
oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time at dIF/dt = 100A/µs (See Figure 6), summation of ta+t
b.
ta = Time to reach peak reverse current at dIF/dt = 100A/µs (See Figure 6).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6).
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
300
100
10
10
IF, FORWARD CURRENT (A)
VF, FORWARD VOLTAGE (V)
175oC
100oC
25oC
0.5 1.0 1.5 2.0 2.5
1000
100
10
1.0
0.1
0.010
IR, REVERSE CURRENT (µA)
100 200 300 400 600
VR, REVERSE VOLTAGE (V)
175oC
100oC
25oC
500
RURG5060
3
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
FIGURE 3. trr,t
aAND tbCURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE
Typical Performance Curves (Continued)
60
50
40
30
20
10
01
t, TIME (ns)
IF, FORWARD CURRENT (A)
10 60
trr
ta
tb
60
50
40
30
20
10
060 80 100 120 140 160 180
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
SQ. WAVE
DC
Test Circuits and Waveforms
FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPLITUDE AND
t1 AND t2CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IFtrr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE +
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1= IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
I = 1.4A
L = 40mH
IV
t0t1t2
IL
VAVL
t
IL
RURG5060
