BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor Rev. 2 -- 10 November 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. f IDq VDS PL(AV) Gp D (MHz) (mA) (V) (W) (dB) (%) (dBc) 2500 to 2700 720 28 16 18.5 29 46[1] - Single carrier W-CDMA 2500 to 2700 720 28 25 18.5 35 36[2] Mode of operation IS-95 ACPR885k ACPR5M (dBc) [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at [2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz. 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2500 MHz to 2700 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2500 MHz to 2700 MHz frequency range BLF7G27L-90P; BLF7G27LS-90P NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G27L-90P (SOT1121A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 3 5 5 [1] source 3 4 4 2 sym117 BLF7G27LS-90P (SOT1121B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source 1 2 1 5 3 5 [1] 3 4 4 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF7G27L-90P - flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT1121A BLF7G27LS-90P - earless flanged LDMOST ceramic package; 4 leads SOT1121B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BLF7G27L-90P_BLF7G27LS-90P Product data sheet Symbol Parameter Conditions VDS drain-source voltage VGS gate-source voltage 0.5 +13 V ID drain current - 18 A Tstg storage temperature 65 +150 C Tj junction temperature - 225 C All information provided in this document is subject to legal disclaimers. Rev. 2 -- 10 November 2011 Min Max Unit - 65 V (c) NXP B.V. 2011. All rights reserved. 2 of 14 BLF7G27L-90P; BLF7G27LS-90P NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 16 W 0.4 K/W 6. Characteristics Table 6. Characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.6 mA Min Typ Max Unit 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 60 mA 1.5 1.8 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 9.6 11.5 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 150 nA gfs forward transconductance VDS = 10 V; ID = 60 mA - 0.53 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 2100 mA - 0.24 - 7. Test information Table 7. Functional test information Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth is 1.2288 MHz; f1 = 2500 MHz; f2 = 2700 MHz; RF performance at VDS = 28 V; IDq = 720 mA; Tcase = 25 C; 2 sections combined unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PL(AV) average output power Gp power gain RLin input return loss D ACPR885k Conditions Min Typ Max Unit - 16 - PL(AV) = 16 W 17 18.5 - dB PL(AV) = 16 W - 15 - dB drain efficiency PL(AV) = 16 W 25 29 % adjacent channel power ratio (885 kHz) PL(AV) = 16 W - 46 41 - W dBc 7.1 Ruggedness in class-AB operation The BLF7G27L-90P and BLF7G27LS-90P are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 720 mA; PL = 90 W (CW); f = 2500 MHz. BLF7G27L-90P_BLF7G27LS-90P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 10 November 2011 (c) NXP B.V. 2011. All rights reserved. 3 of 14 BLF7G27L-90P; BLF7G27LS-90P NXP Semiconductors Power LDMOS transistor 7.2 Single carrier IS-95 Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. aaa-000968 19 (1) (2) (3) Gp (dB) aaa-00969 50 D (%) (1) 18 (2) (3) 40 17 30 16 15 5 15 25 35 45 PL (W) 20 55 VDS = 28 V; IDq = 720 mA. 5 15 (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Single carrier IS-95 power gain as a function of output power; typical values BLF7G27L-90P_BLF7G27LS-90P Product data sheet 35 45 PL (W) 55 VDS = 28 V; IDq = 720 mA. (1) f = 2500 MHz Fig 1. 25 Fig 2. Single carrier IS-95 drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 -- 10 November 2011 (c) NXP B.V. 2011. All rights reserved. 4 of 14 BLF7G27L-90P; BLF7G27LS-90P NXP Semiconductors Power LDMOS transistor aaa-000970 -30 APCR855 (dBc) aaa-000971 -50 APCR1980 (dBc) -35 -55 (1) (2) -40 (3) (1) (2) (3) -60 -45 -65 -50 -55 5 15 25 35 45 PL (W) -70 55 VDS = 28 V; IDq = 720 mA. 5 15 (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Single carrier IS-95 ACPR at 885 kHz as a function of output power; typical values aaa-000972 10 PAR (dB) 35 45 PL (W) 55 VDS = 28 V; IDq = 720 mA. (1) f = 2500 MHz Fig 3. 25 Fig 4. Single carrier IS-95 ACPR at 1980 kHz as a function of output power; typical values aaa-000973 120 PL(M) (W) 9 (1) 110 (2) 8 (3) 100 7 (1) (2) (3) 6 90 5 80 4 3 5 15 25 35 45 PL (W) 70 55 VDS = 28 V; IDq = 720 mA. 5 15 (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Single carrier IS-95 peak-to-average power ratio as a function of output power; typical values BLF7G27L-90P_BLF7G27LS-90P Product data sheet 35 45 PL (W) 55 VDS = 28 V; IDq = 720 mA. (1) f = 2500 MHz Fig 5. 25 Fig 6. Single carrier IS-95 peak output power as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 -- 10 November 2011 (c) NXP B.V. 2011. All rights reserved. 5 of 14 BLF7G27L-90P; BLF7G27LS-90P NXP Semiconductors Power LDMOS transistor 7.3 Pulsed CW aaa-000974 20 Gp (dB) aaa-000975 60 D (%) (1) (2) 19 50 18 (1) (2) (3) (3) 40 17 30 16 15 10 30 50 70 90 20 110 PL (W) VDS = 28 V; IDq = 720 mA. 10 30 (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz Product data sheet 90 PL (W) 110 (3) f = 2700 MHz Pulsed CW power gain as a function of output power; typical values BLF7G27L-90P_BLF7G27LS-90P 70 VDS = 28 V; IDq = 720 mA. (1) f = 2500 MHz Fig 7. 50 Fig 8. Pulsed CW drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 -- 10 November 2011 (c) NXP B.V. 2011. All rights reserved. 6 of 14 BLF7G27L-90P; BLF7G27LS-90P NXP Semiconductors Power LDMOS transistor 7.4 Single carrier W-CDMA 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz. aaa-000976 20 Gp (dB) aaa-000977 50 D (%) (1) (2) (3) 19 40 (1) (2) 18 (3) 30 17 16 5 15 25 35 45 PL (W) 55 VDS = 28 V; IDq = 720 mA. 20 5 15 (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Single carrier W-CDMA power gain as a function of output power; typical values BLF7G27L-90P_BLF7G27LS-90P Product data sheet 35 45 PL (W) 55 VDS = 28 V; IDq = 720 mA. (1) f = 2500 MHz Fig 9. 25 Fig 10. Single carrier W-CDMA drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 -- 10 November 2011 (c) NXP B.V. 2011. All rights reserved. 7 of 14 BLF7G27L-90P; BLF7G27LS-90P NXP Semiconductors Power LDMOS transistor aaa-000978 -25 aaa-000979 -45 APCR10M (dBc) APCR5M (dBc) (1) (2) (3) -50 (1) (2) (3) -35 -55 -60 -45 -65 -55 5 15 25 35 45 PL (W) 55 -70 VDS = 28 V; IDq = 720 mA. 5 15 (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a function of output power; typical values aaa-000980 8 (1) PL (W) 55 Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a function of output power; typical values aaa-000981 140 120 (3) 6 100 5 80 4 60 3 45 PL(M) (W) (2) 7 35 VDS = 28 V; IDq = 720 mA. (1) f = 2500 MHz PAR (dB) 25 5 15 25 35 45 PL (W) 55 VDS = 28 V; IDq = 720 mA. 40 (1) (2) (3) 5 15 (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Fig 13. Single carrier W-CDMA peak-to-average power ratio as a function of output power; typical values Product data sheet 35 45 PL (W) 55 VDS = 28 V; IDq = 720 mA. (1) f = 2500 MHz BLF7G27L-90P_BLF7G27LS-90P 25 Fig 14. Single carrier W-CDMA peak output power as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 -- 10 November 2011 (c) NXP B.V. 2011. All rights reserved. 8 of 14 BLF7G27L-90P; BLF7G27LS-90P NXP Semiconductors Power LDMOS transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT1121A D A F D1 U1 B q C H1 c 2 1 p U2 H E1 E 5 A w1 3 A B 4 b w2 C Q e 0 5 Dimensions Unit(1) mm 10 mm scale A max 4.75 nom min 3.45 b c D D1 3.94 0.18 20.02 19.96 3.68 0.10 19.61 19.66 E e E1 F H H1 p Q(2) 9.53 9.53 1.14 19.94 12.83 3.38 1.70 9.27 9.27 0.89 18.92 12.57 3.12 1.45 q U1 U2 27.94 8.89 max 0.187 0.155 0.007 0.788 0.786 0.375 0.375 0.045 0.785 0.505 0.133 0.067 inches nom 0.35 min 0.136 0.145 0.004 0.772 0.774 0.365 0.365 0.035 0.745 0.495 0.123 0.057 References IEC JEDEC JEITA w2 0.25 0.51 33.91 9.65 1.345 0.39 0.01 0.02 1.1 1.335 0.38 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version w1 34.16 9.91 sot1121a_po European projection Issue date 09-10-12 10-02-02 SOT1121A Fig 15. Package outline SOT1121A BLF7G27L-90P_BLF7G27LS-90P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 10 November 2011 (c) NXP B.V. 2011. All rights reserved. 9 of 14 BLF7G27L-90P; BLF7G27LS-90P NXP Semiconductors Power LDMOS transistor Earless flanged LDMOST ceramic package; 4 leads SOT1121B D A F 5 D1 D U1 w2 H1 H c D 2 1 U2 E1 E 4 3 b Q w3 e 0 5 10 mm scale Dimensions Unit(1) mm A max 4.75 nom min 3.45 b c D D1 3.94 0.18 20.02 19.96 3.68 0.08 19.61 19.66 E e E1 F H H1 Q U1 U2 w2 w3 9.53 9.53 1.14 19.94 12.83 1.70 20.70 9.91 8.89 0.51 0.25 9.27 9.27 0.89 18.92 12.57 1.45 20.45 9.65 max 0.187 0.155 0.007 0.788 0.786 0.375 0.375 0.045 0.785 0.505 0.067 0.815 0.39 inches nom 0.35 0.02 0.01 min 0.136 0.145 0.003 0.772 0.774 0.365 0.365 0.035 0.745 0.495 0.057 0.805 0.38 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version References IEC JEDEC JEITA sot1121b_po European projection Issue date 09-10-12 09-12-14 SOT1121B Fig 16. Package outline SOT1121B BLF7G27L-90P_BLF7G27LS-90P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 10 November 2011 (c) NXP B.V. 2011. All rights reserved. 10 of 14 BLF7G27L-90P; BLF7G27LS-90P NXP Semiconductors Power LDMOS transistor 9. Abbreviations Table 8. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel IS-95 Interim Standard 95 ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor N-CDMA Narrowband Code Division Multiple Access PAR Peak-to-Average power Ratio RF Radio Frequency VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 10. Revision history Table 9. Revision history Document ID Release date Data sheet status BLF7G27L-90P_BLF7G27LS-90P v.2 20111110 Modifications: Product data sheet - BLF7G27L-90P_BLF7G27L S-90P v.1 * Table 1 on page 1: Some values have been changed; added row: Single carrier W-CDMA. * * * * * * * Table 5 on page 3: Some values have been changed. Table 6 on page 3: Some values have been changed/added. Table 7 on page 3: Some values have been changed. Section 7.1 on page 3: Some values have been changed. Section 7.2 on page 4: Graphs have been added. Section 7.3 on page 6: Graphs have been added. Section 7.4 on page 7: Graphs have been added. BLF7G27L-90P_BLF7G27LS-90P v.1 20101102 BLF7G27L-90P_BLF7G27LS-90P Product data sheet Change notice Supersedes Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 -- 10 November 2011 - (c) NXP B.V. 2011. All rights reserved. 11 of 14 BLF7G27L-90P; BLF7G27LS-90P NXP Semiconductors Power LDMOS transistor 11. 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Export might require a prior authorization from competent authorities. BLF7G27L-90P_BLF7G27LS-90P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 10 November 2011 (c) NXP B.V. 2011. All rights reserved. 12 of 14 NXP Semiconductors BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 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Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF7G27L-90P_BLF7G27LS-90P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 10 November 2011 (c) NXP B.V. 2011. All rights reserved. 13 of 14 NXP Semiconductors BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Single carrier IS-95 . . . . . . . . . . . . . . . . . . . . . . 4 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Single carrier W-CDMA . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 November 2011 Document identifier: BLF7G27L-90P_BLF7G27LS-90P