BLF7G27LS-90P,118 - NXP Semiconductors

1. Product profile

1.1 General description

90 W LDMOS power tra n sisto r for ba se station applicat ion s at freque n c ies fro m

2500 MHz to 2700 MHz.

[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at

0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.

[2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is

3.84 MHz.

1.2 Features and benefits

Excellent ruggedness

High efficiency

Low Rth providing excellent thermal stability

Designed for broadband operation (2500 MHz to 2700 MHz)

Lower output capacitance for improved performance in Doherty applications

Designed for low memory effects providing excellent pre-distortability

Internally matched for ease of use

Integrated ESD protection

Compliant to Directive 2002/95/EC, rega rd in g Re stri ctio n of Hazard ou s Sub stances

(RoHS)

1.3 Applications

RF power amplifiers for W-CDMA base stations and multi carrier applications in the

2500 MHz to 2700 MHz frequency range

BLF7G27L-90P;

BLF7G27LS-90P

Power LDMOS transistor

Rev. 2 — 10 November 2011 Product data sheet

Table 1. Typical performance

Typical RF perfo rman c e at Tcase = 25



C in a common source class-AB production test circuit.

Mode of operation f IDq VDS PL(AV) GpDACPR885k ACPR5M

(MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc)

IS-95 2500 to 2700 720 28 16 18.5 29 46[1] -

Single carrier W-CDMA 2500 to 2700 720 28 25 18.5 35 36[2]

Product data sheet Rev. 2 — 10 November 2011 2 of 14

NXP Semiconductors BLF7G27L-90P; BLF7G27LS-90P

Power LDMOS transistor

2. Pinning information

[1] Connected to flange.

3. Ordering information

4. Limiting values

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

BLF7G27L-90P (SOT1 121A)

1drain1

2drain2

3gate1

4gate2

5source [1]

BLF7G27LS-90P (SOT1 121B)

1drain1

2drain2

3gate1

4gate2

5source [1]

2sym117

Table 3. Ordering information

Type number Package

Name Description Version

BLF7G27L-90P - flanged LDMOST ceramic package; 2 mounting holes;

4 leads SOT1121A

BLF7G27LS-90P - earless flanged LDMOST ceramic package; 4 leads SOT1121B

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 65 V

VGS gate-source voltage 0.5 +13 V

IDdrain current - 18 A

Tstg storage temperature 65 +150 C

Tjjunction temperature - 225 C

Product data sheet Rev. 2 — 10 November 2011 3 of 14

NXP Semiconductors BLF7G27L-90P; BLF7G27LS-90P

Power LDMOS transistor

5. Thermal characteristics

6. Characteristics

7. Test information

7.1 Ruggedness in class-AB operation

The BLF7G27L-90P and BLF7G27LS-90P are capable of withstanding a load mismatch

corresponding to VSWR = 10 : 1 through all phases under the following conditions:

VDS =28V; I

Dq =720mA; P

L= 9 0 W (CW); f = 2500 MHz.

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-c) thermal resistance from junction to case Tcase =80C; PL=16W 0.4 K/W

Table 6. Characteristics

Tj = 25



C; per section unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; I

D= 0.6 mA 65 - - V

VGS(th) gate-source threshold voltage VDS =10 V; I

D= 60 mA 1.5 1.8 2.3 V

IDSS drain leakage current VGS =0V; V

DS =28V - - 1.4 A

IDSX drain cut-off current VGS =V

GS(th) +3.75 V;

VDS =10V 9.6 11.5 - A

IGSS gate leakage current VGS =11 V; V

DS = 0 V - - 150 nA

gfs forward transconductance VDS =10V; I

D=60 mA - 0.53 - S

RDS(on) drain-source on-state resistance VGS =V

GS(th) + 3.75 V;

ID= 2100 mA -0.24-

Table 7. Functional test information

Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic

channels (Walsh codes 8 - 13). P AR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth

is 1.2288 MHz; f1= 2500 MHz; f2= 2700 MHz; RF performance at VDS =28V; I

Dq =720mA;

Tcase =25



C; 2 sections combined unless otherwise specified; in a class-AB production test circuit.

Symbol Parameter Conditions Min Typ Max Unit

PL(AV) average output power - 16 - W

Gppower gain PL(AV) =16W 17 18.5 - dB

RLin input return loss PL(AV) =16W - 15 - dB

Ddrain efficiency PL(AV) =16W 25 29 - %

ACPR885k adjacent channel power ratio (885 kHz) PL(AV) =16W - 46 41 dBc

Product data sheet Rev. 2 — 10 November 2011 4 of 14

NXP Semiconductors BLF7G27L-90P; BLF7G27LS-90P

Power LDMOS transistor

7.2 Single carrier IS-95

Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).

PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.

VDS = 28 V; IDq = 720 mA.

(1) f = 2500 MHz

(2) f = 2600 MHz

(3) f = 2700 MHz

VDS = 28 V; IDq = 720 mA.

(1) f = 2500 MHz

(2) f = 2600 MHz

(3) f = 2700 MHz

Fig 1. Single carrier IS-95 power gain as a function of

output power; typical values Fig 2. Single carrier IS-95 drain efficiency as a

function of output power; typical values

aaa-000968

(1)

(dB)

5554525 3515

PL (W)

(3)

(2)

(1)

(2)

5554525 3515

ηD

(%)

(3)

aaa-00969

PL (W)

Product data sheet Rev. 2 — 10 November 2011 5 of 14

NXP Semiconductors BLF7G27L-90P; BLF7G27LS-90P

Power LDMOS transistor

VDS = 28 V; IDq = 720 mA.

(1) f = 2500 MHz

(2) f = 2600 MHz

(3) f = 2700 MHz

VDS = 28 V; IDq = 720 mA.

(1) f = 2500 MHz

(2) f = 2600 MHz

(3) f = 2700 MHz

Fig 3. Single carrier IS-95 ACPR at 885 kHz as a

function of output power; typical values Fig 4. Single carrier IS-95 ACPR at 1980 kHz as a

function of output power; typical values

VDS = 28 V; IDq = 720 mA.

(1) f = 2500 MHz

(2) f = 2600 MHz

(3) f = 2700 MHz

VDS = 28 V; IDq = 720 mA.

(1) f = 2500 MHz

(2) f = 2600 MHz

(3) f = 2700 MHz

Fig 5. Single carrier IS-95 peak-to-average power

ratio as a function of output power;

typical values

Fig 6. Single carrier IS-95 peak output power as a

function of output power; typical values

APCR855

(dBc)

-55

-50

-45

-40

-35

-30

(3)

(1)

5554525 3515

aaa-000970

PL (W)

(2)

-70

-65

-60

-55

-50

APCR1980

(dBc)

(1)

(3)

5554525 3515

PL (W)

aaa-000971

(2)

PL (W)

5554525 3515

aaa-000972

PAR

(dB)

(1)

(3)

(2)

PL (W)

5554525 3515

aaa-000973

100

110

120

PL(M)

(W)

(3)

(1)

(2)

Product data sheet Rev. 2 — 10 November 2011 6 of 14

NXP Semiconductors BLF7G27L-90P; BLF7G27LS-90P

Power LDMOS transistor

7.3 Pulsed CW

VDS = 28 V; IDq = 720 mA.

(1) f = 2500 MHz

(2) f = 2600 MHz

(3) f = 2700 MHz

VDS = 28 V; IDq = 720 mA.

(1) f = 2500 MHz

(2) f = 2600 MHz

(3) f = 2700 MHz

Fig 7. Pulsed CW power gain as a function of output

power; typical values Fig 8. Pulsed CW drain efficiency as a function of

output power; typical values

PL (W)

aaa-000974

10 1109050 7030

(dB)

(3)

(2)

(1)

ηD

(%)

10 1109050 7030

PL (W)

aaa-000975

(2)

(3)

(1)

Product data sheet Rev. 2 — 10 November 2011 7 of 14

NXP Semiconductors BLF7G27L-90P; BLF7G27LS-90P

Power LDMOS transistor

7.4 Single carrier W - CDMA

3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.

Channel bandwidth is 3.84 MHz.

VDS = 28 V; IDq = 720 mA.

(1) f = 2500 MHz

(2) f = 2600 MHz

(3) f = 2700 MHz

VDS = 28 V; IDq = 720 mA.

(1) f = 2500 MHz

(2) f = 2600 MHz

(3) f = 2700 MHz

Fig 9. Single carrier W-CDMA power gain as a

function of output power; typical values Fig 10. Single carrier W-CDMA drain efficiency as a

function of output power; typical values

(dB)

5554525 3515

PL (W)

aaa-000976

(3)

(2)

(1)

aaa-000977

(1)

5554525 3515

PL (W)

(3)

(2)

ηD

(%)

Product data sheet Rev. 2 — 10 November 2011 8 of 14

NXP Semiconductors BLF7G27L-90P; BLF7G27LS-90P

Power LDMOS transistor

VDS = 28 V; IDq = 720 mA.

(1) f = 2500 MHz

(2) f = 2600 MHz

(3) f = 2700 MHz

VDS = 28 V; IDq = 720 mA.

(1) f = 2500 MHz

(2) f = 2600 MHz

(3) f = 2700 MHz

Fig 11. Single carr ier W-CDMA ACPR at 5 MH z as a

function of output power; typical values Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a

function of output power; typical values

VDS = 28 V; IDq = 720 mA.

(1) f = 2500 MHz

(2) f = 2600 MHz

(3) f = 2700 MHz

VDS = 28 V; IDq = 720 mA.

(1) f = 2500 MHz

(2) f = 2600 MHz

(3) f = 2700 MHz

Fig 13. Single carrier W -CD MA peak-to -average p ower

ratio as a function of output power;

typical values

Fig 14. Single carrier W-CDMA peak output power as a

function of output power; typical values

aaa-000978

5554525 3515

PL (W)

-55

-45

-35

-25

APCR5M

(dBc)

(3)

(2)

(1)

APCR10M

(dBc)

-70

-65

-60

-55

-50

-45

5554525 3515

aaa-000979

PL (W)

(2)

(1)

(3)

PAR

(dB)

5554525 3515

aaa-000980

PL (W)

(2)

(1)

(3)

PL(M)

(W)

100

120

140

5554525 3515

aaa-000981

PL (W)

(3)

(1)

(2)

Product data sheet Rev. 2 — 10 November 2011 9 of 14

NXP Semiconductors BLF7G27L-90P; BLF7G27LS-90P

Power LDMOS transistor

8. Package outline

Fig 15. Package outline SOT1121A

References

Outline

version European

projection Issue date

IEC JEDEC JEITA

SOT1121A 09-10-12

10-02-02

Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT1121A

Cw2

Aw1B

sot1121a_po

Unit(1)

mm max

nom

min

4.75

3.45

3.94

3.68

0.18

0.10

20.02

19.61

19.96

19.66

9.53

9.27

1.14

0.89

19.94

18.92

3.38

3.12

9.91

9.65 0.25

Dimensions

bcDD

1EE

9.53

9.27

FHH

12.83

12.57

(2)

1.70

1.45

27.94

34.16

33.91

U2w1

0.51

inches max

nom

min

0.187

0.136

0.155

0.145

0.007

0.004

8.89

0.35

0.788

0.772

0.786

0.774

0.375

0.365

0.045

0.035

0.785

0.745

0.133

0.123

0.39

0.38 0.01

0.375

0.365

0.505

0.495

0.067

0.057 1.1 1.345

1.335 0.02

0 5 10 mm

scale

Note

1. millimeter dimensions are derived from the original inch dimensions.

2. dimension is measured 0.030 inch (0.76 mm) from the body.

Product data sheet Rev. 2 — 10 November 2011 10 of 14

NXP Semiconductors BLF7G27L-90P; BLF7G27LS-90P

Power LDMOS transistor

Fig 16. Package outline SOT1121B

References

Outline

version European

projection Issue date

IEC JEDEC JEITA

SOT1121B

sot1121b_po

09-10-12

09-12-14

Unit(1)

mm max

nom

min

4.75

3.45

3.94

3.68

0.18

0.08

20.02

19.61

19.96

19.66

9.53

9.27

1.14

0.89

19.94

18.92

9.91

9.65

Dimensions

Note

1. millimeter dimensions are derived from the original inch dimensions.

2. dimension is measured 0.030 inch (0.76 mm) from the body.

Earless flanged LDMOST ceramic package; 4 leads SOT1121B

bcDD

1EE

9.53

9.27

FHH

12.83

12.57

1.70

1.45

20.70

20.45

inches max

nom

min

0.187

0.136

0.155

0.145

0.007

0.003

8.89

0.35

0.788

0.772

0.786

0.774

0.375

0.365

0.045

0.035

0.785

0.745

0.39

0.38

0.375

0.365

0.505

0.495

0.067

0.057

0.815

0.805

0.25

0.01

0.51

0.02

w2w3

0 5 10 mm

scale

D1D

Dw2

Product data sheet Rev. 2 — 10 November 2011 11 of 14

NXP Semiconductors BLF7G27L-90P; BLF7G27LS-90P

Power LDMOS transistor

9. Abbreviations

10. Revision history

Table 8. Abbreviations

Acronym Description

3GPP Third Generation Partnership Project

CCDF Complementary Cumulative Distribution Function

CW Continuous Wave

DPCH Dedicated Physical CHannel

IS-95 Interim Standard 95

ESD ElectroStatic Discharge

LDMOS Laterally Diffused Metal Oxide Semiconductor

LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor

N-CDMA Narrowband Code Division Multiple Access

PAR Peak-to-Average power Ratio

RF Radio Frequency

VSWR Voltage Standing Wave Ratio

W-CDMA Wideband Code Division Multiple Access

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF7G27L-90P_BLF7G27LS-90P v.2 20111110 Product data sheet - BLF7G27L-90P_BLF7G27L

S-90P v.1

Modifications: •Table 1 on page 1: Some values have been changed; added row: Single carrier

W-CDMA.

•Table 5 on page 3: Some value s have bee n change d.

•Table 6 on page 3: Some value s have bee n change d/added.

•Table 7 on page 3: Some value s have bee n change d.

•Section 7.1 on page 3: Some values have been changed.

•Section 7.2 on page 4: Graphs have been added.

•Section 7.3 on page 6: Graphs have been added.

•Section 7.4 on page 7: Graphs have been added.

BLF7G27L-90P_BLF7G27LS-90P v.1 20101102 Objective data sheet - -

Product data sheet Rev. 2 — 10 November 2011 12 of 14

NXP Semiconductors BLF7G27L-90P; BLF7G27LS-90P

Power LDMOS transistor

11. Legal information

11.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

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full information. For detailed and full information see the relevant full data

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

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the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 2 — 10 November 2011 13 of 14

NXP Semiconductors BLF7G27L-90P; BLF7G27LS-90P

Power LDMOS transistor

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12. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BLF7G27L-90P; BLF7G27LS-90P

Power LDMOS transistor

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 10 November 2011

Document identifier: BLF7G27L-90P_BLF7G27LS-90P

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3

7.1 Ruggedness in class-AB operation . . . . . . . . . 3

7.2 Single carrier IS-95. . . . . . . . . . . . . . . . . . . . . . 4

7.3 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

7.4 Single carrier W-CDMA . . . . . . . . . . . . . . . . . . 7

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12 Contact information. . . . . . . . . . . . . . . . . . . . . 13

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14