2N7002V
N-Channel MOSFET
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
Rating Rating Unit
VDSS Drain-source Voltage 60 V
VDGR Drain-Gate Voltage 60 V
VGSS Gate-source Voltage ±20 V
ID Drain Current 280 mA
PD Total Power Dissipation 150 mW
RθJA Thermal Resistance Junction to Ambient 833 ℃/W
TJ Operating Junction Temperature -55 to +150
℃
TSTG Storage Temperature -55 to +150
℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter Min
Typ
Max
Units
V(BR)DSS
Drain-Source Breakdown Voltage*
(VGS=0Vdc, ID=10µAdc) 60 70 --- Vdc
Vth(GS) Gate-Threshold Voltage*
(VDS=VGS, ID=250µAdc) 1.0
--- 2.5 Vdc
IGSS Gate-body Leakage*
(VDS =0Vdc, VGS =±20Vdc) --- --- ±0.1
µAdc
IDSS Zero Gate Voltage Drain Current*
(VDS =60Vdc, VGS =0Vdc)
(VDS =0Vdc, VGS =±20Vdc, Tj=125℃)
---
---
---
---
1
500 µAdc
ID(ON) On-state Drain Current*
(VDS =7.5Vdc, VGS =10Vdc) 0.5
1.0 --- Adc
rDS(on) Drain-Source On-Resistance*
(VGS=5Vdc, ID=50mAdc)
(VGS=10Vdc, ID=500mAdc) ---
---
---
---
3.0
2.0 Ω
gFS Forward Tran Conductance*
(VDS=10Vdc, ID=200mAdc) 80 --- --- ms
Ciss Input Capacitance --- --- 50
COSS Output Capacitance --- --- 25
CrSS Reverse Transfer
Capacitance
VDS=25Vdc,
VGS =0Vdc
f=1MHz --- --- 5 pF
Switching
td(on) Turn-on Time --- --- 20
td(off) Turn-off Time
VDD=30Vdc,
VGEN=10Vdc
RL=150Ω,ID=200mA,
RG=25Ω --- --- 20 ns
* Pulse test, pulse width≦300μs, duty cycle≦20%
DIMENSIONS
INCHES MM
DIM
MIN MAX MIN MAX NOTE
A .006 .011 0.15 0.30
B .043 .049 1.10 1.25
C .061 .067 1.55 1.70
D .020 0.50
G .035 .043 0.90 1.10
H .059 .067 1.50 1.70
K .022 .023 0.56 0.60
L .004 .011 0.10 0.30
M .004 .007 0.10 0.18
SOT-563
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: 1 2005/01/25
Marking: KAS
Units
2N7002V MCC
www.mccsemi.com
Revision: 1 2005/01/25
