©2000 Fairchild Semiconductor International Rev. A, February 2000
BDW93CF
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
Symbol Parameter Value Units
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
IC Collector Current (DC) 12 A
ICP *Collector Current (Pulse) 15 A
IB Base Current 0.2 A
PC Collector Dissipation (TC=25°C) 30 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO(sus) * Collector-Emitter Sustaining Voltage IC = 100mA, IB = 0 100 V
ICBO Collector Cut-off Current VCB = 100V, IE = 0 100 µA
ICEO Collector Cut-off Current VCE = 100V, IB = 0 1 mA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA
hFE * DC Current Gain VCE = 3V, IC = 3A
VCE = 3V, IC = 5A
VCE = 3V, IC = 10A
1000
750
100 20000
VCE(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 20mA
IC = 10A, IB = 100mA 2
3 V
V
VBE(sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 20mA
IC = 10A, IB = 100mA 2.5
4 V
V
VF* Parallel Diode Forward Voltage IF = 5A
IF = 10A 1.3
1.8 2
4 V
V
BDW93CF
Hammer Drivers,
Audio Amplifiers Applications
• Power Darlington TR
• Complement to BDW94CF respectively
1
1.Base 2.Collector 3. Em itter
TO-220F
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDW93CF
Typical character istics
Figure 1. DC Current Gain Figure 2 . C o llector-Emi tt e r Saturation Vol tage
Figure 3. Base-Emitter On Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
0.1 1 10 100
100
1k
10k
100k
VCE = 3V
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
0.1 1 10 100
0.1
1
10
IC= 250 IB
VCE(sat) [V], SATURATION VOLTAGE
IC [A], COLLECTOR CURRENT
0.0 0.8 1.6 2.4 3.2 4.0
0
4
8
12
16
20
VCE = 3 V
IC [A], COLLECTOR CURRENT
VBE [V], BASE-EMITT ER VOLTAGE
110100
10
100
1000 f=1MHz
IE=0
Cob [pF], OUTPUT CAPACTIANCE
VCB [V], COLLECTOR-BASE VOLTAGE
1 10 100 1000
0.1
1
10
100
100 us
1 ms
5 ms
DC
IC MAX.
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR EMITTER VOLTAGE
0 255075100125150175
0
10
20
30
40
50
PD [W], PO W ER DIS S IPATIO N
TC [oC], CASE TEMPERAT URE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDW93CF
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
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