DATA SH EET
Objective specification
Supersedes data of 2002 April 02 2003 Mar 07
DISCRETE SEMICONDUCTORS
BLF2022-125
UHF power LDMOS transistor
M3D792
2003 Mar 07 2
Philips Semiconductors Objective specification
UHF power LDMOS transistor BLF2022-125
FEATURES
Typical W-CDMA performance at a supply voltage of
28 V and IDQ of 1 A
Output power = 20 W (AV)
Gain = 12 dB
Efficiency = 19%
ACPR = 42 dBc at 3.84 MHz
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (2000 to 2200 MHz)
Internally matched for ease of use.
APPLICATIONS
RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range
DESCRIPTION
125 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
PINNING - SOT634A
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
1
3
2
Top view
MBL367
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit; single-carrier W-CDMA test model 1, 64 channels,
3.84 MHz channel bandwidth; Peak/Average = 9.8 dB at 0.01% probability on CCDF.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF OPERATION f
(MHz) VDS
(V) PLavg
(W) Gp
(dB) ηD
(%) dim
(dBc)
single carrier W-CDMA 2110 to 2170 28 30 typ 12 typ 19 typ 42
SYMBOL PARAMETER MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage −±15 V
IDdrain current (DC) tbd A
Tstg storage temperature 65 +150 °C
Tjjunction temperature 200 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Mar 07 3
Philips Semiconductors Objective specification
UHF power LDMOS transistor BLF2022-125
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-c thermal resistance from junction to case note 1 0.55 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage VGS = 0; ID= 2.5 mA 65 −−V
V
GSth gate-source threshold voltage VDS =10V; I
D= 240 mA 4.5 5.5 V
IDSS drain-source leakage current VGS = 0; VDS =26V −−10 µA
IGSS gate leakage current VGS =±15 V; VDS =0 −−40 nA
gfs forward transconductance VDS =10V; I
D=16A 9.5 S
RDSon drain-source on-state resistance VGS =V
GSth +9V; I
D=8A 0.07 −Ω
C
rss feedback capacitance VGS = 0; VDS =26V; f=1MHz tbd pF
2003 Mar 07 4
Philips Semiconductors Objective specification
UHF power LDMOS transistor BLF2022-125
APPLICATION INFORMATION
RF performance at Th=25°C in a common source test circuit; single-carrier W-CDMA test model 1, 64 channels, with
68% clipping, 3.84 MHz channel bandwidth; Peak/Average = 8.5 dB at 0.01% probability on CCDF.
RF performance at Th=25°C in a common source test circuit; two-carrier W-CDMA signals, 3GPP test mode 1 64
channels, with 68% clipping, 3.84 MHz channel bandwidth; Peak/Average = 8.5 dB at 0.01% probability on CCDF per
channel frequency range is 2.11 GHz to 2.17 GHz; carrier spacing is 10 MHz.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Gpcommon-source power gain VD= 28 V; Pout = 20 W (AV), single
carrier W-CDMA; IDQ = 1000 mA;
f = 2.11 to 2.17 GHz
11 12 dB
ηDdrain efficiency VD= 28 V; Pout = 20 W (AV), single
carrier W-CDMA; IDQ = 1000 mA;
f = 2.11 to 2.17 GHz
17 19 %
ACPR adjacent channel power ratio VD= 28 V; Pout = 20 W (AV), single
carrier W-CDMA; IDQ = 1000 mA;
f = 2.11 to 2.17 GHz
−−49 39 dBc
IRL input return loss VD= 28 V; Pout = 20 W (AV), single
carrier W-CDMA; IDQ = 1000 mA;
f = 2.11 to 2.17 GHz
−−10 6dB
ψoutput mismatch VD= 28 V; Pout = 20 W (AV) single
carrier W-CDMA;VSWR = 5:1 through
all phases
no degradation in RF
performance before and after
test
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Gpcommon-source power gain VD= 28 V; Pout = 20 W (AV);
IDQ = 1000 mA 12 dB
ηDdrain efficiency VD= 28 V; Pout = 20 W (AV);
IDQ = 1000 mA 19 %
ACPR adjacent channel power ratio VD= 28 V; Pout = 20 W (AV);
IDQ = 1000 mA; ACPR is measured at
f1=5 MHz and f2= +5 MHz
−−40 dBc
d3third order intermodulation
distortion VD= 28 V; Pout = 20 W (AV);
IDQ = 1000 mA; ACPR is measured at
f1=10 MHz and f2= +10 MHz
−−36 dB
IRL input return loss VD= 28 V; Pout = 20 W (AV);
IDQ = 1000 mA −−10 dB
2003 Mar 07 5
Philips Semiconductors Objective specification
UHF power LDMOS transistor BLF2022-125
PACKAGE OUTLINE
Package under
development
Philips Semiconductors reserves the
right to make changes without notice.
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT634A 01-11-27
0 5 10 mm
scale
Flanged ceramic package; 2 mounting holes; 2 leads SOT634A
D
D1
U1
1
3
2
A
U2
L
L
EE1
p
bQ
F
c
M M
C
C
A
w2
q
B
w1AB
M M M
UNIT Q
cD E
1
EFLp q
mm 0.15
0.08
b
12.82
12.57 13.34
13.08
D1
22.56
22.15 1.14
0.89 5.33
4.32
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
3.38
3.12 27.94 34.16
33.91
U2
U1
13.84
13.59 0.25
w2
w1
0.51
A
4.83
3.68 1.70
1.45
inches 0.006
0.003
0.505
0.495 0.525
0.515
13.34
13.08
0.525
0.515
0.888
0.872
22.58
22.12
0.889
0.871 0.045
0.035 0.210
0.170 0.133
0.123 1.100 1.345
1.335 0.545
0.535 0.010 0.020
0.190
0.145 0.067
0.057
2003 Mar 07 6
Philips Semiconductors Objective specification
UHF power LDMOS transistor BLF2022-125
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Mar 07 7
Philips Semiconductors Objective specification
UHF power LDMOS transistor BLF2022-125
NOTES
© Koninklijke Philips Electronics N.V. 2003 SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
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Printed in The Netherlands 613524/03/pp8 Date of release: 2003 Mar 07 Document order number: 9397 750 10919