Number: DB-151
March 2010, Revision D
Page 1
TAK CHEONG ®
SEMICONDUCTOR
20A SCHOTTKY BARRIER DIODE
Full Pack High Voltage Schottky
Rectifier
Specification Features:
High Voltage Wide Range Selection, 100V, 150V & 200V
High Switching Speed Device
Low Forward Voltage Drop
Low Power Loss and High Efficiency
Guard Ring for Over-voltage Protection
High Surge Capability
RoHS Compliant
Matte Tin(Sn) Lead Finish
Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C Wave Soldering or
per MIL-STD-750, Method 2026.
DEVICE MARKING DIAGRAM
POLARITY CONFIGURATION
MAXIMUM RATINGS (Per Leg, unless otherwise specified )
Symbol Parameter MBRF20100CT MBRF20150CT MBRF20200CT Units
VRRM
VRWM
VR
Maximum Repetitive Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Reverse Voltage 100 150 200 V
IF(AV) Average Rectified Forward Current
Per Leg
Per Package
10
20 A
IFSM Non-repetitive Peak Forward Surge Current
8.3mS Single Phase @ Rated Load 150 A
TSTG Storage Temperature Range -65 to +150 °C
TJ Operating Junction Temperature +150 °C
These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTICS TA = 25°C unless otherwise noted
Symbol Parameter Value
Units
RθJC Maximum Thermal Resistance, Junction-to-Case 2.0 °C/W
RθJA Maximum Thermal Resistance, Junction-to-Ambient (per leg) 60 °C/W
ELECTRICAL CHARACTERISTICS (Per Diode ) TA = 25°C unless otherwise noted
MBRF20100CT MBRF20150CT MBRF20200CT
Symbol Parameter Test Condition
(Note 1) Min Max Min Max Min Max
Units
IR Reverse Current @ rated VR --- 200 --- 200 --- 200 μA
VF Forward Voltage IF = 10A
IF = 20A --- 0.85
0.95 --- 0.92
1.00 --- 1.00
1.25 V
Note/s:
1. Tested under pulse condition of 300μS.
MBRF20100CT through MBRF20200CT
123TO-220FP
1. Anode 2. Cathode 3. Anode
L xxyy
Line 2
Line 3
Line 4
L = Tak Cheong Logo
xxyy = Monthly Date Code
Line 2 = MBRF
Line 3 = 20xxxCT
Line 4 = Polarity
Number: DB-151
March 2010, Revision D
Page 2
TAK CHEONG ®
SEMICONDUCTOR
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
VF - Inst antan eou r s Fo rward V oltag e [ V ]
I F - F orw ard Current [ A]
Ta=75℃
Ta=125℃
Ta=150℃
Ta=25℃
f = 1MHz
Ta = 2 5 ℃
10.0
100.0
1000.0
0 5 10 15 20 25 30 35 40
Reverse V oltage [V]
Typical Junction Capacitance
[pF]
MBRF20150CT
MBRF20200CT
MBRF20100CT
0
4
8
12
16
20
0 25 50 75 100 125 150
Tc - Case Temperature [℃]
A verag e Fo rward C urrent [ A ]
0.001
0.010
0.100
1.000
10.000
100.000
1000.000
10000.000
0 20 40 60 80 100 120 140 160 180 200
VR - Reverse Vol tage [V]
IR - Reverse Curren t [uA]
)
Ta=25℃
Ta=75℃
Ta=125℃
Ta= 150℃
0.001
0.010
0.100
1.000
10.000
100.000
1000.000
10000.000
0 15 304560 7590105120135150
VR - Reverse Voltag e [ V]
I R - Re verse Current [ uA]
)
Ta=25℃
Ta=75℃
Ta=125℃
Ta = 1 5 0 ℃
0.010
0.100
1.000
10.000
100.000
1000.000
10000.000
0 1020 3040 50 6070 8090100
VR - Reverse Vol tage [V]
I R - Re verse Curren t [u A]
)
Ta=25℃
Ta=75℃
Ta=125℃
Ta = 1 50 ℃
Figure 1. Forward Current Derating Curve (Per Diode) Figure 2. Junction Capacitance (Per Diode)
Figure 3. MBRF20100CT Typical Reverse Current (Per Diode) Figure 4. MBRF20150CT Typical Reverse Current (Per Diode)
Figure 5. MBRF20200CT Typical Reverse Current (Per Diode) Figure 6. MBRF20100CT Typical Forward Voltage (Per Diode)
Number: DB-151
March 2010, Revision D
Page 3
TAK CHEONG ®
SEMICONDUCTOR
TO220FP SG PACKAGE OUTLINE
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A1 2.7 3.3 0.106 0.130
A2 15.0 15.7 0.591 0.618
A4 6.2 6.6 0.244 0.260
b 0.5 0.9 0.020 0.035
b1 0.9 1.2 0.035 0.047
b2 1.0 1.2 0.039 0.047
c 0.4 0.6 0.016 0.024
D 9.8 10.3 0.386 0.406
e 2.34 2.74 0.092 0.108
E 4.3 4.6 0.169 0.181
E1 2.5 2.9 0.098 0.114
F 2.6 3.0 0.102 0.118
L 10.3 10.7 0.406 0.421
ØP 3.0 3.4 0.118 0.134
Q 2.3 2.7 0.091 0.106
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
VF - Instantaneous Forward Voltage [V]
IF - Forward Currect [A]
Ta=75℃
Ta=125℃
Ta=150℃
Ta=25℃
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
VF - Instan t aneous Fo rward Vo ltage [V]
I F - Fo rward Curren t [ A]
Ta=75℃
Ta=125℃
Ta=150℃
Ta=25℃
Figure 7. MBRF20150CT Typical Forward Voltage (Per Diode) Figure 8. MBRF20200CT Typical Forward Voltage (Per Diode)
Number: DB-100
April 14, 2 008 / A
DISCLAIMER NOTICE
TAK CHEONG ®
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunctio n of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information re viously supplied. For additio nal information , please visit
our website http://www.takcheong.com, o r consu lt your ne ares t Tak Cheong’s sales off ic e for further assis t anc e.
