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c 2011 ROHM Co., Ltd. All rights reserved. 2011.11 - Rev.B
PNP small signal transistor
BCX71H
Features Dimensions (Unit : mm)
1) Ideal for switching and AF amplifier applications.
2) Complements the BCX70.
Packaging specifications
Package
Code Taping
Basic ordering unit (pieces)
BCX70H
T116
3000
Type
Absolute maximum ratings (Ta=25C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗
Mounted on a 7
×
5
×
0.6 mm CERAMIC SUBSTRATE
Parameter
V
CBO
V
CEO
V
EBO
P
C
Tj
Tstg
−45 V
V
V
A
°C
°C
−45
−5
−0.2
I
C
∗
0.2
0.35 W
W
150
−55 to 150
Symbol Limits Unit
Electrical characteristics (Ta=25C)
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter cutoff current
Emitter-base cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
DC current transfer ratio
Collector-base cutoff current
Parameter Symbol
BVCEO
BVEBO
ICES
IEBO
VCE(sat)2
hFE
fT
I
CBO
Min.
−45
−5
−
−
−
140
−
−
−
−
−
−
−
180
−
−
−
−
−0.1
−0.1
−0.55
310
80 −−
−
−20
VI
C= −2mA
IC= −10μA
VCE= −45V
VEB= −4V
IC/IB= −50mA/ −1.25mA
VCE= −5V, IC= −2mA
VCE= −5V, IC= −50mA
VCE= −5V, IE= −10mA, f=100MHz
VCB= −45V, Ta=150
°C
V
μ
A
μ
A
V
VCE(sat)1 −−−0.25 IC/IB= −10mA/ −0.25mAV
VBE(sat)2 −−−1.05 IC/IB= −50mA/ −1.25mAV
VBE(sat)1 −−−0.85 IC/IB= −10mA/ −0.25mAV
−
MHz
μ
A
Typ. Max. Unit Conditions
VBE(on) −0.6 −−0.75 VCE= −5V, IC= −2mAV
Transition frequency
Cob −−6V
CB= −10V, f=1MHzpF
Collector output capacitance
NF −−6V
CE= −5V, IC= −200μA, f=1kHz,Rg=2kΩdB
Noise figure
Each lead has same dimensions
(1)Emitter
(2)Base
(3)Collector
BCX71H
0.45
0.95
0.15
0.2Min.
2.4
1.3
2.9
0.95
(1)
(3)
0.95
(2)
1.9
0.4
Abbreviated symbol : GBH
Not Recommended for
New Designs