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○
c 2011 ROHM Co., Ltd. All rights reserved. 2011.11 - Rev.B
PNP small signal transistor
BCX71H
Features Dimensions (Unit : mm)
1) Ideal for switching and AF amplifier applications.
2) Complements the BCX70.
Packaging specifications
Package
Code Taping
Basic ordering unit (pieces)
BCX70H
T116
3000
Type
Absolute maximum ratings (Ta=25C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗
Mounted on a 7
×
5
×
0.6 mm CERAMIC SUBSTRATE
Parameter
V
CBO
V
CEO
V
EBO
P
C
Tj
Tstg
−45 V
V
V
A
°C
°C
−45
−5
−0.2
I
C
∗
0.2
0.35 W
W
150
−55 to 150
Symbol Limits Unit
Electrical characteristics (Ta=25C)
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter cutoff current
Emitter-base cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
DC current transfer ratio
Collector-base cutoff current
Parameter Symbol
BVCEO
BVEBO
ICES
IEBO
VCE(sat)2
hFE
fT
I
CBO
Min.
−45
−5
−
−
−
140
−
−
−
−
−
−
−
180
−
−
−
−
−0.1
−0.1
−0.55
310
80 −−
−
−20
VI
C= −2mA
IC= −10μA
VCE= −45V
VEB= −4V
IC/IB= −50mA/ −1.25mA
VCE= −5V, IC= −2mA
VCE= −5V, IC= −50mA
VCE= −5V, IE= −10mA, f=100MHz
VCB= −45V, Ta=150
°C
V
μ
A
μ
A
V
VCE(sat)1 −−−0.25 IC/IB= −10mA/ −0.25mAV
VBE(sat)2 −−−1.05 IC/IB= −50mA/ −1.25mAV
VBE(sat)1 −−−0.85 IC/IB= −10mA/ −0.25mAV
−
MHz
μ
A
Typ. Max. Unit Conditions
VBE(on) −0.6 −−0.75 VCE= −5V, IC= −2mAV
Transition frequency
Cob −−6V
CB= −10V, f=1MHzpF
Collector output capacitance
NF −−6V
CE= −5V, IC= −200μA, f=1kHz,Rg=2kΩdB
Noise figure
Each lead has same dimensions
(1)Emitter
(2)Base
(3)Collector
BCX71H
0.45
0.95
0.15
0.2Min.
2.4
1.3
2.9
0.95
(1)
(3)
0.95
(2)
1.9
0.4
Abbreviated symbol : GBH
Not Recommended for
New Designs
BCX71H Data Sheet
2/2
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○
c 2011 ROHM Co., Ltd. All rights reserved. 2011.11 - Rev.B
Electrical characteristics
-0.1
-1
-10
-100
0 -0.2 -0.4 -0.6 -0.8 -1 -1.2
I : TNERRUC ROTCELLOC
C
)Am(
BASE TO EMITTER VOLTAGE : V
BE
(V)
V
CE
=-5V
Ta=125ºC
75ºC
25ºC
-55ºC
0
-20
-40
-60
-80
-100
0-1-2-3-4-5-6-7-8-9-10
I : TNERRUC ROTCELLOC
C
)Am(
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
I
B
=-50uA
I
B
=0A
Ta=25ºC
I
B
=-100uA
I
B
=-150uA
I
B
=-200uA
I
B
=-250uA
I
B
=-300uA
I
B
=-350uA
I
B
=-500uA
-450uA
-400uA
Fig1. Grounded Emitter Propagation
Characteristics Fig2. Grou n d e d Emitter Outpu t
Characteristics
10
100
1000
-1 -10 -100 -1000
h : NIAG TNERRUC CD
EF
COLLECTOR CURRENT : I
C
(mA)
Ta=25ºC
V
CE
=-5V
-
3V
-1V
Fig3. DC Current Gain vs.
Collector Current (I)
-0.01
-0.1
-1
-0.1 -1 -10 -100 -1000
V : EGATLOV NOITARUTAS ROTCELLOC
)tas(EC
)V(
COLLECTOR CURRENT : I
C
(mA)
Ta=25ºC
I
C
/I
B
=40/1
20/1
10/1
Fig5. Co llecto r S a tu ra tion Volta g e
vs. Collector Current (I)
10
100
1000
-1 -10 -100 -1000
h : NIAG TNERRUC CD
EF
COLLECTOR CURRENT : I
C
(mA)
V
CE
=-5V
Ta=125ºC
75ºC
25ºC
-55ºC
Fig4. DC Cu rr e n t Gain vs.
Collector Current (II)
0.01
0.1
1
-0.1 -1 -10 -100 -1000
V : EGATLOV NOITARUTAS ROTCELLOC
)tas(EC
)V(
COLLECTOR CURRENT : I
C
(mA)
I
C
/I
B
=40/1
Ta=125ºC
75ºC
25ºC
-55ºC
Fig6. Collector Saturation Voltage
vs. Collector Current (II)
-0.1
-1
-10
-1 -10 -100
V : EGATLOV NOITARUTAS ESAB
)tas(EB
)V(
COLLECTOR CURRENT : I
C
(mA)
I
C
/I
B
=40/1
Ta=-55ºC
25ºC
75ºC
125ºC
Fig7. Base Saturation Voltage
vs. Collector Current
Fig.8 Gain bandwidth product vs.
emitter current
50 1000.5 20
50
100
200
500
1000
12 510
EMITTER CURRENT : I
E
(
mA)
f : YCNEUQERF NOITISNART
T
(
)zHM
Ta=25˚C
V
CE
=−
12V
Fig.9
Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
( boC : ECNATICAPAC TUPTUO ROTCELLOC
)Fp
( biC : ECNATICAPAC TUPNI RETTIME
)Fp
−0.5 −20
2
5
10
−1−2−5−10
20
biC
boC
Ta=25˚C
f=1MHz
IE=
0A
I
C=0A
Not Recommended for
New Designs
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
Notice
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Notes
Not Recommended for
New Designs
